Patent application number | Description | Published |
20090320557 | MEMS Stiction Testing Apparatus and Method - A MEMS stiction testing method applies a first electrical signal to a MEMS device having two opposing surfaces to cause the two opposing surfaces to make physical contact. The two opposing surfaces produce a second electrical signal when in physical contact. The method then substantially mitigates the first electrical signal after detecting that the second electrical signal has reached a prescribed maximum value. | 12-31-2009 |
20100283138 | Nickel-Based Bonding of Semiconductor Wafers - A nickel-based material is used on one or both wafers to be bonded, and the two wafers are bonded at low temperature and pressure through interdiffusion of the nickel-based material with either another nickel-based material or aluminum. In various embodiments, nickel-based walls are formed on one wafer, and corresponding walls are formed on the other wafer from a nickel-based material or aluminum. The walls of the two wafers are placed in contact with one another under sufficient pressure and temperature to cause bonding of the walls through interdiffusion. | 11-11-2010 |
20110073859 | Reduced Stiction MEMS Device with Exposed Silicon Carbide - A MEMS device has a first member that is movable relative to a second member. At least one of the first member and the second member has exposed silicon carbide with a water contact angle of greater than about 70 degrees. | 03-31-2011 |
20110075865 | Dual Single-Crystal Backplate Microphone System and Method Of Fabricating Same - A dual backplate MEMS microphone system includes a flexible diaphragm sandwiched between two single-crystal silicon backplates. Such a MEMS microphone system may be formed by fabricating each backplate in a separate wafer, and then transferring one backplate from its wafer to the other wafer, to form two separate capacitors with the diaphragm. | 03-31-2011 |
20120111113 | BAW Gyroscope with Bottom Electrode - A bulk acoustic wave gyroscope has a primary member in a member plane, and an electrode layer in an electrode plane spaced from the member plane. The electrode layer has a first portion that is electrically isolated from a second portion. The first portion, however, is mechanically coupled with the second portion and faces the primary member (e.g., to actuate or sense movement of the primary member). For support, the second portion of the electrode is directly coupled with structure in the member plane. | 05-10-2012 |
20130065343 | METHOD FOR ETCHING MATERIAL LONGITUDINALLY SPACED FROM ETCH MASK - A micromachining process forms a plurality of layers on a wafer. This plurality of layers includes both a support layer and a given layer. The process also forms a mask, with a mask hole, at least in part on the support layer. In this configuration, the support layer is positioned between the mask hole and the given layer, and longitudinally spaces the mask hole from the given layer. The process also etches a feature into the given layer through the mask hole. | 03-14-2013 |
20130257456 | System and Method for Detecting Surface Charges of a MEMS Device - A method for measuring retained surface charges within a MEMS device includes performing an initial voltage sweep on the MEMS device, and recording the capacitance between a first and second electrode of the MEMS device. The method may then (1) apply a stress signal to the MEMS device that causes a first and/or second electrode within the MES device to retain a surface charge, and (2) perform at least one additional voltage sweep on the MEMS device. The method may record the capacitance during the additional voltage sweep(s), and calculate a C-V center voltage shift based upon the data obtained during the initial voltage sweep and additional voltage sweep. The voltage shift is representative of the retained surface charge. | 10-03-2013 |
20130320466 | Package for Damping Inertial Sensor - A capped micromachined accelerometer with a Q-factor of less than 2.0 is fabricated without encapsulating a high-viscosity gas with the movable mass of the micromachined accelerometer by providing small gaps between the movable mass and the substrate, and between the movable mass and the cap. The cap may be an silicon cap, and may be an ASIC smart cap. | 12-05-2013 |
20140001577 | MEMS Device with Improved Charge Elimination and Methods of Producing Same | 01-02-2014 |
20140072150 | Microphone with Parasitic Capacitance Cancelation - A microelectromechanical microphone and method of manufacturing the same are disclosed. The microphone has a moveable diaphragm and a fixed backplate that create a variable capacitance. A fixed anchor electrically coupled to the diaphragm has an electrode that measures the variable capacitance, but also measures an unwanted, additive, parasitic capacitance. Various embodiments include a reference electrode, manufactured in the same deposition layer as the diaphragm or anchor, that measures only the parasitic capacitance. A circuit is provided either on-chip or off-chip that subtracts the capacitance measured at the reference electrode from that measured at the anchor, thereby producing only the desired variable capacitance as output. Because the reference electrode is deposited at the same time as the diaphragm or anchor, only minimal changes are required to existing manufacturing techniques. | 03-13-2014 |
20140072152 | Dual Single-Crystal Backplate Microphone System and Method Of Fabricating Same - A dual backplate MEMS microphone system includes a flexible diaphragm sandwiched between two single-crystal silicon backplates. Such a MEMS microphone system may be formed by fabricating each backplate in a separate wafer, and then transferring one backplate from its wafer to the other wafer, to form two separate capacitors with the diaphragm. | 03-13-2014 |
20140131850 | MICROCHIP WITH BLOCKING APPARATUS AND METHOD OF FABRICATING MICROCHIP - A microchip has a base die with a conductive interconnect and an isolation trench around at least a portion of the conductive interconnect, and a cap die secured to the base die. A seal, formed from a metal material, is positioned between the base die and the cap die to secure them together. The microchip also has a blocking apparatus, between the isolation trench and the metal seal, that at least in part prevents the metal material from contacting the interconnect. | 05-15-2014 |
20140133685 | Microphone System with Mechanically-Coupled Diaphragms - A microphone system has two diaphragms and are mechanically interconnected such that they respond in antiphase to an acoustic signal impinging on one of the diaphragms. The two diaphragms produce two variable capacitances that vary proportionately but inversely to one another. Voltage signals produced by the two variable capacitances are summed to provide an output signal proportional to the acoustic signal, but with greater sensitivity than a single-diaphragm microphone. | 05-15-2014 |
20140203422 | Microchip with Blocking Apparatus and Method of Fabricating Microchip - A microchip has a base die with a conductive interconnect and an isolation trench around at least a portion of the conductive interconnect, and a cap die secured to the base die. A seal, formed from a metal material, is positioned between the base die and the cap die to secure them together. The microchip also has a blocking apparatus, between the isolation trench and the metal seal, that at least in part prevents the metal material from contacting the interconnect. | 07-24-2014 |
20140220723 | Methods and Structures for Using Diamond in the Production of MEMS - A MEMS device with movable MEMS structure and electrodes is produced by fabricating electrodes and shielding the electrodes with diamond buttons during subsequent fabrication steps, such as the etching of sacrificial oxide using vapor HF. In some embodiments, the diamond buttons are removed after the movable MEMS structure is released. | 08-07-2014 |
20140264650 | Low Frequency Response Microphone Diaphragm Structures And Methods For Producing The Same - A microphone system includes a diaphragm suspended by springs and including a sealing layer that seals passageways which, if left open, would degrade the microphone's frequency response by allowing air to pass from one side of the diaphragm to the other when the diaphragm is responding to an incident acoustic signal. In some embodiments, the sealing layer may include an equalization aperture to allow pressure to equalize on both sides of the diaphragm. | 09-18-2014 |
20140356989 | METHOD OF MANUFACTURING MEMS DEVICES WITH RELIABLE HERMETIC SEAL - Manufactured capped MEMS device wafers are tested for hermeticity on a vacuum prober at differing pressures or on a wafer prober at differing temperatures. Resonant frequency testing is conducted. Leaking MEMS devices are distinguished from the remaining MEMS devices on the basis of quality factor (“Q”) measurements obtained from the resonant frequency testing. | 12-04-2014 |
20140374850 | Apparatus and Method for Shielding and Biasing in MEMS Devices Encapsulated by Active Circuitry - One or more conductive shielding plates are formed in a standard ASIC wafer top metal layer, e.g., for blocking cross-talk from MEMS device structure(s) on the MEMS wafer to circuitry on the ASIC wafer when the MEMS device is capped directly by the ASIC wafer in a wafer-level chip scale package. Generally speaking, a shielding plate should be at least slightly larger than the MEMS device structure it is shielding (e.g., a movable MEMS structure such as an accelerometer proof mass or a gyroscope resonator), and the shielding plate cannot be in contact with the MEMS device structure during or after wafer bonding. Thus, a recess is formed to ensure that there is sufficient cavity space away from the top surface of the MEMS device structure. The shielding plate is electrically conductive and can be biased, e.g., to the same voltage as the opposing MEMS device structure in order to maintain zero electrostatic attraction force between the MEMS device structure and the shielding plate. | 12-25-2014 |
20140374856 | Apparatus and Method for Preventing Stiction of MEMS Devices Encapsulated by Active Circuitry - One or more stopper features (e.g., bump structures) are formed in a standard ASIC wafer top passivation layer for preventing MEMS device stiction vertically in integrated devices having a MEMS device capped directly by an ASIC wafer. A TiN coating may be used on the stopper feature(s) for anti-stiction. An electrical potential may be applied to the TiN anti-stiction coating of one or more stopper features. | 12-25-2014 |