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Ku, Hsinchu City

Cheng-Hung Ku, Hsinchu City TW

Patent application numberDescriptionPublished
20090276750METHOD FOR ESTABLISHING SCATTERING BAR RULE - A method for establishing a scattering bar rule for a mask pattern for fabricating a device is provided. The method is described as follows. First, at least one image simulation model is established according to the mask pattern and a process reference set used for fabricating the device based on the mask pattern. Next, a plurality of scattering bar reference sets is applied to the image simulation model so as to generate a plurality of simulation images, respectively. Further, a portion of the simulation images are selected to be a plurality of candidate layouts according to a screening criterion. Next, one of the candidate layouts is determined to be a pattern layout according to a selection rule, and the scattering bar reference set corresponding to the pattern layout is determined to be a scattering bar rule of the mask pattern.11-05-2009

Chih-An Ku, Hsinchu City TW

Patent application numberDescriptionPublished
20100212100Cleaning Apparatus for Sophisticated Electric Device - A cleaning apparatus is provided to clean a sophisticated electric device. The apparatus has cleaning units and each of the cleaning units has a cambered top. Thus, coordinated with an actuating device, a sophisticated electric device can be cleaned by using the cleaning apparatus with cleaning units having cambered tops.08-26-2010
20120096660Cleaning Cylinder Apparatus - A novel cleaning tool is provided. A net-like carrier is twined on an inner cylinder. Protrusions of the inner cylinder are butted again a cleaning unit. With the net-like carrier and the protrusions, a bond between the cleaning unit and the inner cylinder is enhanced to strengthen the whole structure. Thus, stability of high-speed rotation of the cleaning unit is further improved to avoid separating the cleaning unit and the inner cylinder.04-26-2012

Mao-Tsai Ku, Hsinchu City TW

Patent application numberDescriptionPublished
20090124192Hiding structure of a vent pipe for a mobile air conditioner - A hiding structure of a vent pipe for a mobile air conditioner is composed of a housing, a cold air outlet for blowing the cold air into a room, and a hot air outlet for expelling the hot air out of the room. The hot air outlet is disposed with an extractable vent pipe which is collected in the housing of the mobile air conditioner, the housing is disposed with a connector opening from which the vent pipe can be extended, and the connector opening is disposed with a vent pipe cap. As the extractable vent pipe is used by the present invention, a volume of the mobile air conditioner is decreased, and convenience in moving is increased.05-14-2009
20100230078EXHAUST PIPE OF AN AIR CONDITIONER - The present invention discloses an exhaust pipe of an air conditioner. The air conditioner includes a condenser, a first pipe, an air duct and a second pipe. The condenser is located in the air conditioner, an end of the first pipe is close to the condenser, the other end is penetrated out of a side of the condenser, and an interior of the first pipe is provided with the second pipe. An end of the second pipe is connected with the air duct (the air duct is located in the air conditioner), and the other end is penetrated out of the first pipe. Therefore, when the air conditioner is running, hot air is sucked into the condenser through the first pipe and then the circulated hot air is sent out of a room from the second pipe through the air duct, such that indoor temperature can be reduced effectively.09-16-2010
20110094260ROLLER EVAPORATOR FOR A SNOW MACHINE - A roller evaporator for a snow machine includes an inner layer and an outer layer. The inner layer is fixed on a high pressure tube and a low pressure tube, and the outer layer corresponds to and rotates relatively with respect to the inner layer. A roller of the roller evaporator is divided into two layers, with the inner layer being installed and sealed on the high pressure tube. Therefore, an extremely good sealing effect is provided and refrigerant does leak out easily while making ice.04-28-2011

Patent applications by Mao-Tsai Ku, Hsinchu City TW

Ming-Hsin Ku, Hsinchu City TW

Patent application numberDescriptionPublished
20090251872POWER SUPPLY ARCHITECTURE FOR STRUCTURAL ASIC - A power supply architecture for a structural application-specific integrated circuit (ASIC) is provided. The power supply architecture includes a first conductor and a second conductor. The first conductor is coupled to a fixed voltage. The first conductor at least passes through two edges of a cell. The first conductor and the second conductor are connected through a contact. The second conductor at most passes through one edge of the cell. The structural ASIC includes a first metal layer and a second metal layer. The first metal layer includes the first conductor. The second metal layer includes the second conductor.10-08-2009

Ming-Hua Ku, Hsinchu City TW

Patent application numberDescriptionPublished
20090009273Hall Effect Switching Circuit and Controlling Method for same - A Hall effect switching circuit includes a magnetic south pole detecting unit configured for detecting and judging a magnetic field intensity of a magnetic south pole to produce a first triggering signal; a magnetic north pole detecting unit configured for detecting and judging a magnetic field intensity of a magnetic north pole to produce a second triggering signal; and a detecting and controlling unit connected to the magnetic south pole detecting unit and the magnetic north pole detecting unit. The detecting and controlling unit is configured for judging a polarity of a magnetic field according to the first triggering signal and the second triggering signal, and selecting a triggering signal corresponding to the polarity of the magnetic field as a switching signal of the Hall effect switching circuit in a predetermined detect and setup time after starting the Hall effect switching circuit.01-08-2009

Tzu-Kun Ku, Hsinchu City TW

Patent application numberDescriptionPublished
20120119375SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - In a manufacturing method of a semiconductor structure, a substrate having a front surface and a back surface is provided. The front surface has a device layer thereon and conductive plugs electrically connected to the device layer. A thinning process is performed on the back surface of the substrate, such that the back surface of the substrate and surfaces of the conductive plugs have a distance therebetween. Holes are formed in the substrate from the back surface to the conductive plugs, so as to form a porous film. An oxidization process is performed, such that the porous film correspondingly is reacted to form an oxide material layer. A polishing process is performed on the oxide material layer to expose the surfaces of the conductive plugs.05-17-2012

Wei-Cheng Ku, Hsinchu City TW

Patent application numberDescriptionPublished
20120038497Transmission Interface and System Using the Same - A transmission interface includes a first pin, a second pin, a conversion unit, and a decoding unit. The conversion unit receives a serial input data stream via the first pin and receives a serial clock via the second pin. The conversion unit converts the serial input data stream to parallel input data and converts the serial clock to a parallel clock. The serial input data stream has a full swing form. The decoding unit receives and decodes the parallel input data and generates an input data signal according to the decoded parallel input data.02-16-2012

Yao-Ching Ku, Hsinchu City TW

Patent application numberDescriptionPublished
20080233486System and Method for Providing Phase Shift Mask Passivation Layer - System and method for providing a passivation layer for a phase shift mask (“PSM”) are described. In one embodiment, a PSM comprises a transparent substrate; a phase shift pattern disposed on the transparent substrate; and a passivation layer disposed to substantially cover exposed surfaces of at least a portion of the phase shift pattern.09-25-2008
20090206057Method To Improve Mask Critical Dimension Uniformity (CDU) - A method and system for fabricating a substrate is disclosed. First, a plurality of process chambers are provided, at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate and at least one of the plurality of process chambers containing a plasma filtering plate library. A plasma filtering plate is selected and removed from the plasma filtering plate library. Then, the plasma filtering plate is inserted into at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate. Subsequently, an etching process is performed in the substrate.08-20-2009
20090222785METHOD FOR SHAPE AND TIMING EQUIVALENT DIMENSION EXTRACTION - An integrated circuit (IC) design method includes providing an IC layout contour based on an IC design layout of an IC device and IC manufacturing data; generating an effective rectangle layout to represent the IC layout contour; and simulating the IC device using the effective rectangular layout.09-03-2009
20090258159NOVEL TREATMENT FOR MASK SURFACE CHEMICAL REDUCTION - A method includes forming an absorption material layer on a mask; applying a plasma treatment to the mask to reduce chemical contaminants after the forming of the absorption material layer; performing a chemical cleaning process of the mask; and performing a gas injection to the mask.10-15-2009
20100095253TABLE-BASED DFM FOR ACCURATE POST-LAYOUT ANALYSIS - Disclosed is a system and method for integrated circuit designs and post layout analysis. The integrated circuit design method includes providing a plurality of IC devices with various design dimensions; collecting electrical performance data of the IC devices; extracting equivalent dimensions of the IC devices; generating a shape related model to relate the equivalent dimensions to the electrical performance data of the IC devices; and creating a data refinement table using the equivalent dimensions and the electrical performance data.04-15-2010
20100293514DESIGN-DRIVEN METAL CRITICAL DIMENSION (CD) BIASING - A method of designing an integrated circuit (“IC”) is provided that includes placing an IC design, where the IC design includes a first element, a second element, and a path coupling the first and second elements, and routing the IC design. Further, the method includes obtaining at least one of resistivity data and capacitance data related to the path, and obtaining timing data related to the path. The method also includes using at least one of the resistivity data, the capacitance data, and the timing data to determine a critical dimension (“CD”) bias to be applied to the path, and modifying the IC design, where modifying includes applying the CD bias to the path.11-18-2010
20110217630INTENSITY SELECTIVE EXPOSURE PHOTOMASK - An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage. Each of the features of the first and second array includes an opening disposed in an area of attenuating material.09-08-2011
20110289466Table-Based DFM for Accurate Post-Layout Analysis - Disclosed is a system and method for integrated circuit designs and post layout analysis. The integrated circuit design method includes providing a plurality of IC devices with various design dimensions; collecting electrical performance data of the IC devices; extracting equivalent dimensions of the IC devices; generating a shape related model to relate the equivalent dimensions to the electrical performance data of the IC devices; and creating a data refinement table using the equivalent dimensions and the electrical performance data.11-24-2011
20120040278INTENSITY SELECTIVE EXPOSURE PHOTOMASK - An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage.02-16-2012

Patent applications by Yao-Ching Ku, Hsinchu City TW

Yi-Sha Ku, Hsinchu City TW

Patent application numberDescriptionPublished
20090030631METHOD FOR ENHANCING THE MEASUREMENT CAPABILITY OF MULTI-PARAMETER INSPECTION SYSTEMS - A method for improving the measurement capability of multi-parameter inspection systems includes performing a measuring procedure to acquire a measured signature of a sample, calculating weighting factors representing a correlation between structural parameters of the sample by using a weighting algorithm, transforming the weighting factors into a sampling function by using a transforming rule, updating the measured signature to form an updated measured signature and generating a plurality of updated nominal signatures according to the sampling function, and comparing the updated measured signature and the updated nominal signatures to determine the structural parameters of the sample.01-29-2009
20090079969Method and apparatus for scatterfield microscopical measurement - A method and an apparatus are disclosed for scatterfield microscopical measurement. The method integrates a scatterometer and a bright-field microscope for enabling the measurement precision to be better than the optical diffraction limit. With the aforesaid method and apparatus, a detection beam is generated by performing a process on a uniform light using an LCoS (liquid crystal on silicon) or a DMD (digital micro-mirror device) which is to directed to image on the back focal plane of an object to be measured, and then scattered beams resulting from the detection beam on the object's surface are focused on a plane to form an optical signal which is to be detected by an array-type detection device. The detection beam can be oriented by the modulation device to illuminate on the object at a number of different angles, by which zero order or higher order diffraction intensities at different positions of the plane at different incident angles can be collected.03-26-2009
20090116035Structure and method for overlay measurement - A structure for overlay measurement is provided in the present invention, using the diffraction characteristics on the boundary portion between two microstructures formed on each of two material layers. The optical intensity distribution on the boundary portion between microstructures formed on the two overlaid material layers respectively are measured by an optical microscope to obtain the overlay error between the two overlaid material layers. In addition, the present invention also provides a method for overlay measurement using the structure for overlay measurement, wherein a merit relation based on the optical intensity distribution on the boundary portion between different microstructures is determined. The merit relation can be used to analyze the overlay error to improve the efficiency and accuracy of on-line error measurement.05-07-2009
20090313589METHOD FOR DESIGNING OVERLAY TARGETS AND METHOD AND SYSTEM FOR MEASURING OVERLAY ERROR USING THE SAME - A method for designing an overlay target comprises selecting a plurality of overlay target pairs having different overlay errors or offsets, calculating a deviation of the simulated diffraction spectrum for each overlay target pair, selecting a plurality of sensitive overlay target pairs by taking the deviation of the simulated diffraction spectrum into consideration, selecting an objective overlay target pair from the sensitive overlay target pairs by taking the influence of the structural parameters to the simulated diffraction spectrum into consideration, and designing the overlay target pair based on the structural parameter of the objective overlay target pair.12-17-2009
20100007881SCATTERFIELD MICROSCOPICAL MEASURING METHOD AND APPARATUS - The present invention provides a scatterfield microscopical measuring method and apparatus, which combine scatterfield detecting technology into microscopical device so that the microscopical device is capable of measuring the sample whose dimension is under the limit of optical diffraction. The scatterfield microscopical measuring apparatus is capable of being controlled to focus uniform and collimated light beam on back focal plane of an objective lens disposed above the sample. By changing the position of the focus position on the back focal plane, it is capable of being adjusted to change the incident angle with respect to the sample.01-14-2010
20100053627REFLECTIVE SCATTEROMETER - A reflective scatterometer capable of measuring a sample is provided. The reflective scatterometer includes a paraboloid mirror, a light source, a first reflector, a second reflector and a detector. The paraboloid mirror has an optical axis and a parabolic surface, wherein the sample is disposed on the focal point of the parabolic surface and the normal direction of the sample is parallel with the optical axis. A collimated beam generated from the light source is reflected by the first reflector to the parabolic surface and then is reflected by the parabolic surface to the sample to form a first diffracted beam. The first diffracted beam is reflected by the parabolic surface to the second reflector and is then reflected by the second reflector to the detector.03-04-2010
20110131538METHOD FOR DESIGNING TWO-DIMENSIONAL ARRAY OVERLAY TARGETS AND METHOD AND SYSTEM FOR MEASURING OVERLAY ERRORS USING THE SAME - A method for designing a two-dimensional array overlay target comprises the steps of: selecting a plurality of two dimensional array overlay targets having different overlay errors; calculating a deviation of a simulated diffraction spectrum for each two-dimensional array overlay target; selecting an error-independent overlay target by taking the deviations of the simulated diffraction spectra into consideration; and designing a two dimensional array overlay target based on structural parameters of the error-independent overlay target.06-02-2011
20110154272METHOD FOR DESIGNING TWO-DIMENSIONAL ARRAY OVERLAY TARGET SETS AND METHOD AND SYSTEM FOR MEASURING OVERLAY ERRORS USING THE SAME - A method for designing a two-dimensional array overlay target set comprises the steps of: selecting a plurality of two-dimensional array overlay target sets having different overlay errors; calculating a deviation of a simulated diffraction spectra for each two-dimensional array overlay target set; selecting a sensitive overlay target set by taking the deviations of the simulated diffraction spectra into consideration; and designing a two-dimensional array overlay target set based on the structural parameters of the sensitive overlay target set.06-23-2011
20110172974SYSTEM AND METHOD FOR VIA STRUCTURE MEASUREMENT - A system for via structure measurement is disclosed. The system comprises a reflectometer, a simulation unit and a comparing unit. The reflectometer is configured to collect a measured diffraction spectrum of at least a via. The simulation unit is configured to provide simulated diffraction spectrums of the at least a via. The comparing unit is configured to determine at least a depth and at least a bottom profile of the at least a via by comparing the collected diffraction spectrum and the simulated diffraction spectrums.07-14-2011
20110320986METHOD FOR DESIGNING OVERLAY TARGETS AND METHOD AND SYSTEM FOR MEASURING OVERLAY ERROR USING THE SAME - A method for designing an overlay target comprises selecting a plurality of overlay target pairs having different overlay errors or offsets, calculating a deviation of the simulated diffraction spectrum for each overlay target pair, selecting a plurality of sensitive overlay target pairs by taking the deviation of the simulated diffraction spectrum into consideration, selecting an objective overlay target pair from the sensitive overlay target pairs by taking the influence of the structural parameters to the simulated diffraction spectrum into consideration, and designing the overlay target pair based on the structural parameter of the objective overlay target pair.12-29-2011

Patent applications by Yi-Sha Ku, Hsinchu City TW