Krishnaswami, US
Brijesh Krishnaswami, Foster City, CA US
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20130091126 | SYSTEMS AND METHODS FOR ANALYSIS AND INTERPRETATION OF NUCLEIC ACID SEQUENCE DATA - Systems and method for annotating variants within a genome can call variants from reads or receive called variants directly and associate the called variants with functional annotations and interpretive annotations. A summary report of the called variants, the associated functional annotations, and the associated interpretive annotations can be generated. | 04-11-2013 |
20140088880 | Systems and Methods for Versioning Hosted Software - Systems and methods for performing a validated analysis can include access to first and second versions of an analysis engine. The first version of the analysis engine can be used to perform a previously validated analysis. After the second version is made available, the first version can be continued to be used while the second version undergoes validation. The user can initiate a migration from the first version to the second version when the validation is complete. Access to both versions can be maintained for a period of time to allow users to migrate on their own schedule, and a common login interface can direct the user to a default version or allow the user to select an alternate version. | 03-27-2014 |
Jayakumar Krishnaswami, Westmont, IL US
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20080223329 | COMPOUND BRACKET SYSTEM - A compound bracket system ( | 09-18-2008 |
Karthik Krishnaswami, San Jose, CA US
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20080212559 | Wireless proximity estimation - A wireless content protection system includes a coordinator, a source device, and a sink device. The coordinator includes a scheduler. The source and sink devices each have a content protection manager. One of the content protection manager allocates and releases bandwidth via the coordinator for a test message and a response message for a round-trip time computation. The test message is transmitted in a source-to-sink channel time block. The response message is transmitted in a sink-to-source channel time block. The round-trip time is the period between the end of the source-to-sink channel time block and the beginning of the sink-to-source channel time block. | 09-04-2008 |
Raja Krishnaswami, Staten Island, NY US
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20130224229 | Novel Curcumin-Antibody Conjugates as Anti-Cancer Agents - The invention relates to curcumin derivatives having the formula I: wherein: Z represents: H | 08-29-2013 |
Ramasunder Krishnaswami, Farmington, MI US
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20110219905 | Range Shifting of an Automatic Transmission - A system for shifting a transmission range includes a selector producing a signal representing a selected range, and the system has a primary state wherein a source of electric power shifts the transmission to the selected range in response to the signal, and a secondary state wherein a source of mechanical energy shifts the transmission to a Park range when the primary state is unable to shift the range. | 09-15-2011 |
Sriram Krishnaswami, East Lyme, CT US
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20140271842 | TOFACITINIB ORAL SUSTAINED RELEASE DOSAGE FORMS - The present invention relates to oral sustained release formulations of tofacitinib and pharmaceutical acceptable salts thereof. The formulations described herein have desirable pharmacokinetic characteristics. | 09-18-2014 |
Sriram Krishnaswami, Saratoga, CA US
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20080251019 | SYSTEM AND METHOD FOR TRANSFERRING A SUBSTRATE INTO AND OUT OF A REDUCED VOLUME CHAMBER ACCOMMODATING MULTIPLE SUBSTRATES - The present invention comprises a system and method for transferring a substrate into and out of a chamber configured to accommodate multiple substrates. In one embodiment, the system comprises a chamber housing that includes a first substrate support tray and a second substrate support tray independently movable along a vertical axis, and a substrate conveyor movable into and out of the chamber housing. The first substrate support tray and the second substrate support tray are movable to a position where a portion of the second substrate support tray is received in the first substrate support tray. | 10-16-2008 |
20090195262 | IN-LINE ELECTRON BEAM TEST SYSTEM - A method and apparatus for testing a plurality of electronic devices formed on a large area substrate is described. In one embodiment, the apparatus performs a test on the substrate in one linear axis in at least one chamber that is slightly wider than a dimension of the substrate to be tested. Clean room space and process time is minimized due to the smaller dimensions and volume of the system. | 08-06-2009 |
20090255911 | LASER SCRIBING PLATFORM AND HYBRID WRITING STRATEGY - Laser scribing can be performed on a workpiece ( | 10-15-2009 |
20090321397 | LASER-SCRIBING PLATFORM - Laser-scribing systems and translation stages operable to support a workpiece during laser scribing are provided. A laser-scribing system includes a base section, a bed supported by the base section, a laser, a first driving mechanism operable to move a workpiece longitudinally along the bed, and a second driving mechanism. The bed comprises a movable section configured to translate with respect to the base section. The movable section comprises a gap to allow a laser beam to pass through. The laser is positioned to direct the laser beam through the gap. The second driving mechanism is operable to laterally translate the laser and the movable section in order to scribe a pattern on the workpiece. | 12-31-2009 |
20090321399 | DYNAMIC SCRIBE ALIGNMENT FOR LASER SCRIBING, WELDING OR ANY PATTERNING SYSTEM - Methods and systems for improving the alignment between a previously formed feature and a subsequently formed feature are provided. An exemplary method can include laser scribing a workpiece ( | 12-31-2009 |
20100327162 | IN-LINE ELECTRON BEAM TEST SYSTEM - A method and apparatus for testing a plurality of electronic devices formed on a large area substrate is described. In one embodiment, the apparatus performs a test on the substrate in one linear axis in at least one chamber that is slightly wider than a dimension of the substrate to be tested. Clean room space and process time is minimized due to the smaller dimensions and volume of the system. | 12-30-2010 |
20140266244 | SYSTEMS AND METHODS FOR REAL-TIME MONITORING OF DISPLAYS DURING INSPECTION - Described are techniques for maintaining reliable and reproducible conditions for panel inspection, i.e. pixel and line defect detection, while at the same time preventing large-scale panel damage. One implementation involves an apparatus for identifying a defect in an electronic circuit incorporating a circuit driving module configured to apply an electrical test signal to the electronic circuit; a defect detection module configured to identify the defect in the electronic circuit based at least on the applied electrical test signal; a signal monitoring module configured to measure the electrical test signal at the electronic circuit; and a control module operatively coupled to the signal monitoring module and the circuit driving module and configured to control at least the circuit driving module based on the electrical test signal measured at the electronic circuit. | 09-18-2014 |
Sumi Krishnaswami, Morrisville, NC US
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20080233285 | Methods of forming SIC MOSFETs with high inversion layer mobility - Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO in a silicon carbide tube that may be coated with silicon carbide. To form the oxide layer, a preliminary oxide layer may be thermally grown on a silicon carbide layer in dry O | 09-25-2008 |
20100221924 | METHODS OF FORMING SIC MOSFETS WITH HIGH INVERSION LAYER MOBILITY - Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO in a silicon carbide tube that may be coated with silicon carbide. To form the oxide layer, a preliminary oxide layer may be thermally grown on a silicon carbide layer in dry O | 09-02-2010 |