Patent application number | Description | Published |
20110085447 | Handling wrong WEP key and related battery drain and communication exchange failures - A power reduction mechanism in a mobile communications device detects the use of a wrong WEP encryption key in the establishment of a WLAN connection between the mobile device and an access point for both static and dynamic IP WLAN profiles. The power reduction mechanism detects an incorrect WEP key; authentication failure; failure to acquire an IP address for dynamic IP WLAN profiles; decryption errors; and broadcast/multicast frames from the handset not being redirected back to the BSS by the AP. Upon such detection, the mobile device takes one or more power conserving actions, e.g., adding the AP/profile to a ban list; attempting WLAN association for a banned AP/profile at longer intervals than for a non-banned AP/profile; skipping an AP/profile on the ban list for a time duration defined by a timer to conserve power; and flagging the banned AP/profile with a special mark to indicate it is banned. | 04-14-2011 |
20110088078 | Authentication Failure in a Wireless Local Area Network - In the event of an authentication process failure, a mobile station bans a connection profile storing the credentials provided by the mobile station when initiating the failed authentication process, thus affecting how subsequent scans—other than discovery scans—and connection attempts are handled. In the event of an authentication process failure, a mobile station bans or suppresses an access point with which the mobile station initiated the failed authentication process. The mobile station refrains from transmitting any communications addressed to the unique identifier of any banned access point. The mobile station may ignore any communications received from a banned access point. Suppressed access points are occasionally not made available to the mobile station for selection as a target for a connection attempt. | 04-14-2011 |
20110211511 | Reducing WLAN Power Consumption on a Mobile Device Utilizing a Cellular Radio Interface - A system and method of reducing the WLAN power consumption and limiting battery drain of a mobile communications device is provided. The mechanism continuously monitors for changes in the WLAN and cellular signal strength and modifies the WLAN profile scanning activity accordingly. By monitoring for changes, transitions can be detected which indicate the location of the mobile device (i.e., indoor or outdoor). An increase in cellular signal strength and a decrease in WLAN signal strength indicates the user is transitioning outdoors where WLAN coverage may be limited. To reduce battery power consumption, background scanning is suspended or its frequency significantly lowered. Moving indoors is indicated by a decrease in cellular signal strength and an increase in WLAN signal strength. Background/Connectivity scanning frequency is increased to provide shorter time-to-connect to WLAN Networks for the user within the WLAN coverage area. | 09-01-2011 |
Patent application number | Description | Published |
20120214533 | Reducing WLAN Power Consumption on a Mobile Device Utilizing a Cellular Radio Interface - A system and method of reducing the WLAN power consumption and limiting battery drain of a mobile communications device is provided. The mechanism continuously monitors for changes in the WLAN and cellular signal strength and modifies the WLAN profile scanning activity accordingly. By monitoring for changes, transitions can be detected which indicate the location of the mobile device (i.e., indoor or outdoor). An increase in cellular signal strength and a decrease in WLAN signal strength indicates the user is transitioning outdoors where WLAN coverage may be limited. To reduce battery power consumption, background scanning is suspended or its frequency significantly lowered. Moving indoors is indicated by a decrease in cellular signal strength and an increase in WLAN signal strength. Background/Connectivity scanning frequency is increased to provide shorter time-to-connect to WLAN Networks for the user within the WLAN coverage area. | 08-23-2012 |
20120230304 | NETWORK ACCESS AND A MOBILE STATION CONFIGURED FOR THE SAME - A method for network access and a mobile station configured for the same is described. In one embodiment, there is provided a method for network access on a mobile station comprising: scanning for Wi-Fi networks; receiving responses from available wireless access points (APs) of the Wi-Fi networks; selecting a Wi-Fi network in accordance with past connectivity data associated with the Wi-Fi networks of the available APs; and attempting to connect to the selected Wi-Fi network. | 09-13-2012 |
20120230305 | WI-FI NETWORK ACCESS AND A MOBILE TERMINAL CONFIGURED FOR THE SAME - A method for network access and a mobile station configured for the same is described. In one embodiment, there is provided a method for Wi-Fi network access on a mobile station comprising: scanning for wireless access points (APs) of a Wi-Fi network; receiving responses from available APs of the Wi-Fi network; selecting an AP in accordance with past connectivity data associated with the available APs; and attempting to connect or switch to the Wi-Fi network using the selected AP. | 09-13-2012 |
20120257536 | Configuring Mobile Station According to Type of Wireless Local Area Network (WLAN) Deployment - A target access point is selected from the results of a discovery scan so that a mobile station can attempt a connection with the target access point. The mobile station determines whether the target access point belongs to a small office/home office (SOHO)-type wireless local area network (WLAN) deployment or to a corporate/enterprise-type WLAN deployment. The mobile station then configures itself according to the determination of the type of WLAN deployment to which the target access point belongs. | 10-11-2012 |
20130170419 | Reducing WLAN Power Consumption on a Mobile Device Utilizing a Cellular Radio Interface - A system and method of reducing the WLAN power consumption and limiting battery drain of a mobile communications device is provided. The mechanism continuously monitors for changes in the WLAN and cellular signal strength and modifies the WLAN profile scanning activity accordingly. By monitoring for changes, transitions can be detected which indicate the location of the mobile device (i.e., indoor or outdoor). An increase in cellular signal strength and a decrease in WLAN signal strength indicates the user is transitioning outdoors where WLAN coverage may be limited. To reduce battery power consumption, background scanning is suspended or its frequency significantly lowered. Moving indoors is indicated by a decrease in cellular signal strength and an increase in WLAN signal strength. Background/Connectivity scanning frequency is increased to provide shorter time-to-connect to WLAN Networks for the user within the WLAN coverage area. | 07-04-2013 |
20130208891 | HANDLING MISMATCH OF CRYPTOGRAPHIC KEYS AND RELATED BATTERY DRAIN AND COMMUNICATION EXCHANGE FAILURES - A wireless communications device stores a first cryptographic key in connection with a profile, the profile indicating a security type requiring no credentials and a network name. An access point (AP) supports a wireless local area network (WLAN), the WLAN having the network name, the WLAN supporting the security type and the WLAN requiring a second cryptographic key for encryption. The wireless communications device successfully authenticates and associates with the AP, thus joining the WLAN. Subsequent to joining the WLAN, the wireless communications device conducts encrypted communications with the AP and detects from the encrypted communications that there is a mismatch between the first cryptographic key and the second cryptographic key. Responsive to detecting the mismatch, the wireless communications device bans the profile or the AP or both. | 08-15-2013 |
20140148131 | Authentication Failure in a Wireless Local Area Network - In the event of an authentication process failure, a mobile station bans a connection profile storing the credentials provided by the mobile station when initiating the failed authentication process, thus affecting how subsequent scans—other than discovery scans—and connection attempts are handled. In the event of an authentication process failure, a mobile station bans or suppresses an access point with which the mobile station initiated the failed authentication process. The mobile station refrains from transmitting any communications addressed to the unique identifier of any banned access point. The mobile station may ignore any communications received from a banned access point. Suppressed access points are occasionally not made available to the mobile station for selection as a target for a connection attempt. | 05-29-2014 |
20140207946 | METHOD AND SYSTEM FOR MANAGING A VPN CONNECTION - A method and computing device configured to send and receive traffic over a virtual private network (VPN) connection, the computing device having a processor; and a communications subsystem, where the method determines that a first trigger had been met, wherein the first trigger is dynamically configured based on at least one factor at the computing device; monitors whether data traffic exists over the VPN connection for a first time period; and if no data traffic exists over the VPN connection for the first time period, disconnects the VPN connection. | 07-24-2014 |
Patent application number | Description | Published |
20090026553 | Tunnel Field-Effect Transistor with Narrow Band-Gap Channel and Strong Gate Coupling - A semiconductor device and the methods of forming the same are provided. The semiconductor device includes a low energy band-gap layer comprising a semiconductor material; a gate dielectric on the low energy band-gap layer; a gate electrode over the gate dielectric; a first source/drain region adjacent the gate dielectric, wherein the first source/drain region is of a first conductivity type; and a second source/drain region adjacent the gate dielectric. The second source/drain region is of a second conductivity type opposite the first conductivity type. The low energy band-gap layer is located between the first and the second source/drain regions. | 01-29-2009 |
20100059737 | Tunnel Field-Effect Transistors with Superlattice Channels - A semiconductor device includes a channel region; a gate dielectric over the channel region; a gate electrode over the gate dielectric; and a first source/drain region adjacent the gate dielectric. The first source/drain region is of a first conductivity type. At least one of the channel region and the first source/drain region includes a superlattice structure. The semiconductor device further includes a second source/drain region on an opposite side of the channel region than the first source/drain region. The second source/drain region is of a second conductivity type opposite the first conductivity type. At most, one of the first source/drain region and the second source/drain region comprises an additional superlattice structure. | 03-11-2010 |
20100327321 | Tunnel Field-Effect Transistor with Narrow Band-Gap Channel and Strong Gate Coupling - A semiconductor device and the methods of forming the same are provided. The semiconductor device includes a low energy band-gap layer comprising a semiconductor material; a gate dielectric on the low energy band-gap layer; a gate electrode over the gate dielectric; a first source/drain region adjacent the gate dielectric, wherein the first source/drain region is of a first conductivity type; and a second source/drain region adjacent the gate dielectric. The second source/drain region is of a second conductivity type opposite the first conductivity type. The low energy band-gap layer is located between the first and the second source/drain regions. | 12-30-2010 |
20110027959 | Tunnel Field-Effect Transistors with Superlattice Channels - A semiconductor device includes a channel region; a gate dielectric over the channel region; a gate electrode over the gate dielectric; and a first source/drain region adjacent the gate dielectric. The first source/drain region is of a first conductivity type. At least one of the channel region and the first source/drain region includes a superlattice structure. The semiconductor device further includes a second source/drain region on an opposite side of the channel region than the first source/drain region. The second source/drain region is of a second conductivity type opposite the first conductivity type. At most, one of the first source/drain region and the second source/drain region comprises an additional superlattice structure. | 02-03-2011 |
20150137079 | VERTICAL TUNNEL FIELD EFFECT TRANSISTOR (FET) - Among other things, one or more techniques for forming a vertical tunnel field effect transistor (FET), and a resulting vertical tunnel FET are provided herein. In an embodiment, the vertical tunnel FET is formed by forming a core over a first type substrate region, forming a second type channel shell around a circumference greater than a core circumference, forming a gate dielectric around a circumference greater than the core circumference, forming a gate electrode around a circumference greater than the core circumference, and forming a second type region over a portion of the second type channel shell, where the second type has a doping opposite a doping of the first type. In this manner, line tunneling is enabled, thus providing enhanced tunneling efficiency for a vertical tunnel FET. | 05-21-2015 |
Patent application number | Description | Published |
20100123203 | Tunnel Field-Effect Transistor with Metal Source - A semiconductor device includes a channel region; a gate dielectric over the channel region; and a gate electrode over the gate dielectric. A first source/drain region is adjacent the gate dielectric, wherein the first source/drain region is a semiconductor region and of a first conductivity type. A second source/drain region is on an opposite side of the channel region than the first source/drain region, wherein the second source/drain region is a metal region. A pocket region of a second conductivity type opposite the first conductivity type is horizontally between the channel region and the second source/drain region. | 05-20-2010 |
20120319167 | Mask-less and Implant Free Formation of Complementary Tunnel Field Effect Transistors - A device includes a first source/drain region of a first conductivity type over a silicon substrate, wherein the first source/drain region is at a higher step of a two-step profile. The first source/drain region includes a germanium-containing region. A second source/drain region is of a second conductivity type opposite the first conductivity type, wherein the second source/drain region is at a lower step of the two-step profile. A gate dielectric includes a vertical portion in contact with a side edge the silicon substrate, and a horizontal portion in contact with a top surface of the silicon substrate at the lower step. The horizontal portion is connected to a lower end of the vertical portion. A gate electrode is directly over the horizontal portion, wherein a sidewall of the gate electrode is in contact with the vertical portion of the gate dielectric. | 12-20-2012 |
20130119395 | Tunnel FET and Methods for Forming the Same - A tunnel field-effect transistor (TFET) includes a gate electrode, a source region, and a drain region. The source and drain regions are of opposite conductivity types. A channel region is disposed between the source region and the drain region. A source diffusion barrier is disposed between the channel region and the source region. The source diffusion barrier and the source region are under and overlapping the gate electrode. The source diffusion barrier has a first bandgap greater than second bandgaps of the source region, the drain region, and the channel region. | 05-16-2013 |
20130134481 | Split-Channel Transistor and Methods for Forming the Same - A Fin Field-Effect Transistor (FinFET) includes a fin, which includes a channel splitter having a first bandgap, and a channel including a first portion and a second portion on opposite sidewalls of the channel splitter. The channel has a second bandgap smaller than the first bandgap. A gate electrode includes a first portion and a second portion on opposite sides of the fin. A gate insulator includes a first portion between the first portion of the gate electrode and the first portion of the channel, and a second portion between the second portion of the gate electrode and the second portion of the channel. | 05-30-2013 |
20130134522 | Hybrid Fin Field-Effect Transistors - A hybrid Fin Field-Effect Transistor (FinFET) includes a first and a second FinFET. The first FinFET includes a first channel region formed of a first semiconductor fin, and a first source region and a first drain region of a first conductivity type. The second FinFET includes a second channel region formed of a second semiconductor fin, a second source region of a second conductivity type opposite the first conductivity type, and a second drain region of the first conductivity type. The second source region and the second drain region are connected to opposite ends of the second channel region. The first and the second gate electrodes are interconnected. The first and the second source regions are electrically interconnected. The first and the second drain regions are electrically interconnected. | 05-30-2013 |
20130137236 | Tunnel Field-Effect Transistor with Narrow Band-Gap Channel and Strong Gate Coupling - A semiconductor device and the methods of forming the same are provided. The semiconductor device includes a low energy band-gap layer comprising a semiconductor material; a gate dielectric on the low energy band-gap layer; a gate electrode over the gate dielectric; a first source/drain region adjacent the gate dielectric, wherein the first source/drain region is of a first conductivity type; and a second source/drain region adjacent the gate dielectric. The second source/drain region is of a second conductivity type opposite the first conductivity type. The low energy band-gap layer is located between the first and the second source/drain regions. | 05-30-2013 |
20130270607 | Semiconductor Device Channel System and Method - A system and method for a channel region is disclosed. An embodiment comprises a channel region with multiple bi-layers comprising alternating complementary materials such as layers of InAs and layers of GaSb. The alternating layers of complementary materials provide desirable band gap characteristics for the channel region as a whole that individual layers of material may not. | 10-17-2013 |
Patent application number | Description | Published |
20140065780 | Split-Channel Transistor and Methods for Forming the Same - A Fin Field-Effect Transistor (FinFET) includes a fin, which includes a channel splitter having a first bandgap, and a channel including a first portion and a second portion on opposite sidewalls of the channel splitter. The channel has a second bandgap smaller than the first bandgap. A gate electrode includes a first portion and a second portion on opposite sides of the fin. A gate insulator includes a first portion between the first portion of the gate electrode and the first portion of the channel, and a second portion between the second portion of the gate electrode and the second portion of the channel. | 03-06-2014 |
20140252478 | FinFET with Channel Backside Passivation Layer Device and Method - A FinFET with backside passivation layer comprises a template layer disposed on a substrate, a buffer layer disposed over the template layer, a channel backside passivation layer disposed over the buffer layer and a channel layer disposed over the channel backside passivation layer. A gate insulator layer is disposed over and in contact with the channel layer and the channel backside passivation layer. The buffer layer optionally comprises aluminum and the channel layer may optionally comprise a III-V semiconductor compound. STIs may be disposed on opposite sides of the channel backside passivation layer, and the channel backside passivation layer may have a top surface disposed above the top surface of the STIs and a bottom surface disposed below the top surface of the STIs. | 09-11-2014 |
20140264277 | Intra-Band Tunnel FET - The present disclosure relates to an intra-band tunnel FET, which has a symmetric FET that is able to provide for a high drive current. In some embodiments, the disclosed intra-band tunnel FET has a source region having a first doping type and a drain region having the first doping type. The source region and the drain region are separated by a channel region. A gate region may generate an electric field that varies the position of a valence band and/or a conduction band in the channel region. By controlling the position of the valence band and/or the conduction band of the channel region, quantum mechanical tunneling of charge carries between the conduction band in the source region and in the drain region or between the valence band in the source region and in the drain region can be controlled. | 09-18-2014 |
20140264438 | Heterostructures for Semiconductor Devices and Methods of Forming the Same - Various heterostructures and methods of forming heterostructures are disclosed. A structure includes a substrate, a template layer, a barrier layer, and a device layer. The substrate comprises a first crystalline material. The template layer comprises a second crystalline material, and the second crystalline material is lattice mismatched to the first crystalline material. The template layer is over and adjoins the first crystalline material, and the template layer is at least partially disposed in an opening of a dielectric material. The barrier layer comprises a third crystalline material, and the third crystalline material is a binary III-V compound semiconductor. The barrier layer is over the template layer. The device layer comprises a fourth crystalline material, and the device layer is over the barrier layer. | 09-18-2014 |
20140346564 | Multi-Threshold Voltage FETs - A multi-threshold voltage (V | 11-27-2014 |
20150054120 | Multiple-Threshold Voltage Devices and Method of Forming Same - A method comprises growing a channel layer over a substrate, wherein the channel layer comprises a first channel region and a second channel region, and wherein the first channel region and the second channel region are separated by a first isolation region, depositing a hard mask layer over the channel layer, patterning the hard mask layer, applying a first delta doping process to the first channel region to form a first delta doping layer over the first channel region, applying a second delta doping process to the second channel region to form a second delta doping layer over the second channel region, wherein the second delta doping layer is of a different doping density from the first delta doping layer and applying a diffusion process to the first delta doping layer and the second delta doping layer. | 02-26-2015 |
20150061005 | ASYMMETRIC SEMICONDUCTOR DEVICE - A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a second conductivity type. The semiconductor device includes a third type region including a third conductivity type that is opposite the first conductivity type, the third type region covering the first type region. The semiconductor device includes a fourth type region including a fourth conductivity type that is opposite the second conductivity type, the fourth type region covering the second type region. The semiconductor device includes a channel region extending between the third type region and the fourth type region. | 03-05-2015 |
20150279679 | Multiple-Threshold Voltage Devices and Method of Forming Same - A method comprises growing a channel layer comprising a first channel region and a second channel region, depositing a first hard mask layer over the channel layer, patterning the first hard mask layer, applying a first delta doping process to the first channel region to form a first delta doping layer over the first channel region, depositing a first cap layer over the first delta doping layer, depositing a second hard mask layer over the channel layer, wherein the first cap layer is embedded in the second hard mask layer, patterning the second hard mask layer and the first hard mask layer to expose the second channel region, applying a second delta doping process to the second channel region to form a second delta doping layer over the second channel region and applying a first diffusion process to the first delta doping layer and the second delta doping layer. | 10-01-2015 |
Patent application number | Description | Published |
20140102100 | METHOD AND A SYSTEM OF ARRANGING TURBINE STAGES FOR SATURATED STEAM APPLICATIONS - The various embodiments herein provide a safety system for multiple turbine stages for saturated steam applications. The system comprises an isolating system having the inter-stage pipes for isolating the turbine stages and for transferring steam from one stage to another stage. A draining system is connected to each seal housing, inlet casing, exit casing and inter stage pipe to drain out a condensed steam vapor during a passage of steam between two successive stages. The draining system comprises drain pipes and a condensate pot for collecting and storing condensed steam. A thermodynamic trap is attached to the drain pipes and condensate pot for removing the condensed steam vapors collected in the condensate pot and drain pipes without significant steam leakage. A control system is provided for detecting and stopping high speed rotation of rotor disk in turbine assembly. | 04-17-2014 |
20140102102 | METHOD AND A SYSTEM FOR MAINTAINING CONSTANT POWER OUTPUT IN LOW PRESSURE STAGES OF STEAM TURBINE UNDER VARIABLE EXTRACTION OF WORKING FLUID - The various embodiments herein provide a method and a system for maintaining a constant power output from the low pressure stages of an extraction-condensing type steam turbine under the large variations of extraction or bleed. The method comprises of keeping the flow of working fluid to the low pressure stages constant for a wide range of variations in extraction. The embodiments herein utilizes a pressure reducing and de-superheating stations (PRDS) and an Auxiliary Quick Start™ turbine to maintain the constant flow of working fluid or alternatively two pressure reducing and de-superheating stations (PRDS) for the same. The Auxiliary Quick Start™ turbine or PRDS is used to maintain the constant power output from the low pressure stages of the extraction-condensing type steam turbine. | 04-17-2014 |
20140105720 | METHOD AND A SYSTEM FOR ADJUSTING NOZZLE AREA IN STEAM TURBINES - The various embodiments herein provide a method and a system for controlling a nozzle area in a steam turbine. The system comprises a nozzle ring provided with a plurality of nozzle blades at an outer edge. The steam enters into the nozzle ring and jets out on the blades of the rotor disk. When there is an off design condition, the nozzle blades are plugged or opened by adding or removing the inserts. The nozzle area is increased or decreased by opening or plugging the nozzle passages manually or automatically with the help of the inserts. The embodiments herein provide a cost effective and simple solution to deal with the off design conditions. | 04-17-2014 |
20150107246 | SYSTEM AND METHOD FOR HEAT STORAGE IN SOLAR THERMAL POWER PLANTS - The embodiments herein provide an improved method for storing thermal energy from the sun in a CSP plant. The heat storage system used for storing the thermal energy has a spherical shell filled with a salt, and several insulated storage towers. The method for storing thermal energy comprises adopting a plurality of spherical shells and filling the spherical shells with the salt. The salt is a mixture of sodium nitrate and potassium nitrate. The spherical shells filled with the salt are packed inside the insulated storage tower. During the day time, a HTF is passed through the tower to melt the salt and store thermal energy. After sunset, the HTF is passed through the storage tower to absorb heat from the salt in the spherical shells. The HTF is then passed through the boiler for producing steam and driving, the turbine. | 04-23-2015 |
20150107496 | BIOMASS GASIFIER SYSTEM FOR POWER GENERATION - The various embodiments herein provide an improved biomass based down draft gasifier for producing electrical energy. The gasifier comprises a reactor with double walled construction having an annular space between outer and inner shells. The annular space houses multiple helical guide vanes welded to the inner shell. The reactor is covered with a top cover assembly. An air inlet manifold is provided for directing the controlled air into the reactor through the air inlet nozzles. An automatic start system is provided for controlling the combustion of inlet fuel done with a spark plug. The gasifier comprises a throat which permits the ashes and charcoal of burnt fuel to drop into the bottom of the reactor. The gas separation holes are provided at the bottom of the reactor to separate the product gas from the charcoal. The product gas is taken out from an output pipe. | 04-23-2015 |
20150114215 | COAXIAL DUAL REDUNDANT HYDRAULIC ACTUATOR SYSTEM - The various embodiments herein provide a coaxial hydraulic actuator assembly for an aircraft hydraulic system for providing the dual redundancy operations in normal and emergency operations. The embodiments herein adopt a coaxial hydraulic cylinder based actuator system comprising a conventional fixed cylinder with a moving piston actuator. The fixed cylinder with a moving piston actuator is located in a first region. The fixed cylinder with the moving piston actuator is manufactured in tandem with a moving cylinder with fixed piston actuator. The moving cylinder with a fixed piston actuator is located in a second region. The fixed piston actuator in the second region is also referred to as actuation rod. Further, the coaxial hydraulic cylinder based actuator system comprises a first adapter and a first cap for the first region. Similarly, a second adapter and a second cap are provided for the second region. | 04-30-2015 |
20150118031 | SYSTEM AND A METHOD OF INSTALLING A TIP SHROUD RING IN TURBINE DISKS - The various embodiments of the present invention provide a method for installing a tip shroud on a turbine disk in a steam turbine. A tip shroud in the form of a ring is installed on the outer periphery of the turbine disk to prevent a leakage of the driving fluid. The method comprises the steps of mounting turbine disk on to a rotor shaft, tapering the outer diameter of the turbine disk and the inner diameter of the tip shroud, aligning and mounting the tapered surface of the turbine disk with the tapered surface of the tip shroud and fastening the tip shroud on the turbine disk with the help of fasteners. The bolted tip shroud is finally machined to reduce the outer peripheral diameter to appropriate dimensions. | 04-30-2015 |
20150147154 | SYSTEM AND METHOD FOR IMPLEMENTING INTRINSIC SAFETY IN ROTATING MACHINE - The embodiments herein disclose a system and method for providing an intrinsic safety to rotating machinery from the failure of internal high speed rotating structures. According to one embodiment herein, a system assembly comprises a unique design of the rotating structure to provide a sufficient safety margin and redundancy in configuration. The system assembly comprises a blower fan assembled inside a blower casing and rotated inside the casing. The fan is manufactured by a single forging process instead of an investment casting. The fan comprises several blades mounted to a hub in a shroud to draw a required quantity of fluid. The fan is mounted to a shaft through the hub. When the blower fan is rotated at a high speed exceeding the design parameters, a ‘rub and stop’ mechanism is initiated to halt the fan. | 05-28-2015 |
Patent application number | Description | Published |
20140183448 | VERTICAL LIGHT EMITTING DIODE WITH PHOTONIC NANOSTRUCTURES AND METHOD OF FABRICATION THEREOF - There is provided a method of fabricating a vertical light emitting diode which includes forming a light emitting diode structure. Forming the light emitting diode structure includes: forming a first material layer of a first conductivity type, forming a second material layer of a second conductivity type, forming a light emitting layer between the first material layer and the second material layer, and forming a plurality of generally ordered photonic nanostructures at a surface of the first material layer through which light generated from the light emitting layer is emitted for enhancing light extraction efficiency of the vertical light emitting diode. In particular, forming a plurality of generally ordered photonic nanostructures includes forming a self-assembled template including generally ordered nanoparticles on the surface of the first material layer to function as a mask for forming the photonic nanostructures at said surface of the first material layer. There is also provided a vertical light emitting diode with the self-assembly derived ordered nanoparticles. | 07-03-2014 |
20150357451 | SEMICONDUCTOR DEVICE FOR HIGH-POWER APPLICATIONS - Contemplated is a semiconductor device comprising: a substrate; a group (III)-nitride layer; a metal-group (III)-nitride layer deposited between the substrate and group (III)-nitride layer; and a metal-nitride layer deposited between the substrate and the metal-group (III)-nitride layer. Also a method for making a semiconductor device with the above mentioned structure is contemplated. Furthermore, the substrate can be a silicon on insulator (SOI) substrate; the metal-nitride layer can be an aluminium nitride layer; the metal-group (III)-nitride layer can be an aluminium gallium nitride layer; and the group (III)-nitride layer can be a gallium nitride layer. | 12-10-2015 |
20160049563 | VERTICAL LIGHT EMITTING DIODE WITH PHOTONIC NANOSTRUCTURES AND METHOD OF FABRICATION THEREOF - There is provided a method of fabricating a vertical light emitting diode which includes forming a light emitting diode structure. Forming the light emitting diode structure includes: forming a first material layer of a first conductivity type, forming a second material layer of a second conductivity type, forming a light emitting layer between the first material layer and the second material layer, and forming a plurality of generally ordered photonic nanostructures at a surface of the first material layer through which light generated from the light emitting layer is emitted for enhancing light extraction efficiency of the vertical light emitting diode. In particular, forming a plurality of generally ordered photonic nanostructures includes forming a self-assembled template including generally ordered nanoparticles on the surface of the first material layer to function as a mask for forming the photonic nanostructures at said surface of the first material layer. There is also provided a vertical light emitting diode with the self-assembly derived ordered nanoparticles. | 02-18-2016 |
Patent application number | Description | Published |
20100205471 | NETWORK BASED SYSTEM TO CONTROL AND MONITOR POWER CONSUMPTION OF NETWORKED ELEMENTS - In an example embodiment, a technique for network based power management for power consuming devices associated with a network. A power control strategy is communicated to network elements coupled to the network. The power control strategy is enforced by the network elements and the network elements report power consumption. Each network element enforces the power strategy relative to the set of power consuming devices operatively associated with the network element. Groups of subtended network elements can manage the power policy in a cluster power management mode or in a collaborative cluster management mode. | 08-12-2010 |
20130279320 | FAILOVER PROCEDURE FOR NETWORKS - In an example embodiment, there is disclosed an apparatus comprising a plurality of ports and routing logic coupled with the plurality of ports. The routing logic obtains data representative of a first port configuration for the plurality of ports, the first port configuration comprises data representative of a status for individual ports selected from the plurality of ports, the status indicating whether an individual port selected from the plurality of ports is an open port, an alternate port, or a failed port. The routing logic forwards data in accordance with the first port configuration. The routing logic also obtains data representative of an alternate port configuration for the plurality of ports, the alternate port configuration is to be employed upon determining a predefined link has failed. The alternate configuration comprising a new status for individual ports selected from the plurality of ports. | 10-24-2013 |
20130279322 | Hardware Based Convergence for a Ring Network - In accordance with an example embodiment, there is disclosed herein, an apparatus having first and second interfaces for communicating on a ring network. Upon receipt of a first signal on the first interface indicating a break in the ring, the apparatus stops forwarding packets onto the ring. Upon receipt of a second signal on the second port indicating a break in the ring, the apparatus forwards all packets destined for the ring network onto the ring network via both the first and second interfaces. | 10-24-2013 |
20140269265 | FAILOVER PROCEDURE FOR NETWORKS - In an example embodiment, there is disclosed an apparatus comprising a plurality of ports and routing logic coupled with the plurality of ports. The routing logic obtains data representative of a first port configuration for the plurality of ports, the first port configuration comprises data representative of a status for individual ports selected from the plurality of ports, the status indicating whether an individual port selected from the plurality of ports is an open port, an alternate port, or a failed port. The routing logic forwards data in accordance with the first port configuration. The routing logic also obtains data representative of an alternate port configuration for the plurality of ports, the alternate port configuration is to be employed upon determining a predefined link has failed. The alternate configuration comprising a new status for individual ports selected from the plurality of ports. | 09-18-2014 |