| Patent application number | Description | Published |
|---|
| 20110085447 | Handling wrong WEP key and related battery drain and communication exchange failures - A power reduction mechanism in a mobile communications device detects the use of a wrong WEP encryption key in the establishment of a WLAN connection between the mobile device and an access point for both static and dynamic IP WLAN profiles. The power reduction mechanism detects an incorrect WEP key; authentication failure; failure to acquire an IP address for dynamic IP WLAN profiles; decryption errors; and broadcast/multicast frames from the handset not being redirected back to the BSS by the AP. Upon such detection, the mobile device takes one or more power conserving actions, e.g., adding the AP/profile to a ban list; attempting WLAN association for a banned AP/profile at longer intervals than for a non-banned AP/profile; skipping an AP/profile on the ban list for a time duration defined by a timer to conserve power; and flagging the banned AP/profile with a special mark to indicate it is banned. | 04-14-2011 |
| 20110088078 | Authentication Failure in a Wireless Local Area Network - In the event of an authentication process failure, a mobile station bans a connection profile storing the credentials provided by the mobile station when initiating the failed authentication process, thus affecting how subsequent scans—other than discovery scans—and connection attempts are handled. In the event of an authentication process failure, a mobile station bans or suppresses an access point with which the mobile station initiated the failed authentication process. The mobile station refrains from transmitting any communications addressed to the unique identifier of any banned access point. The mobile station may ignore any communications received from a banned access point. Suppressed access points are occasionally not made available to the mobile station for selection as a target for a connection attempt. | 04-14-2011 |
| 20110211511 | Reducing WLAN Power Consumption on a Mobile Device Utilizing a Cellular Radio Interface - A system and method of reducing the WLAN power consumption and limiting battery drain of a mobile communications device is provided. The mechanism continuously monitors for changes in the WLAN and cellular signal strength and modifies the WLAN profile scanning activity accordingly. By monitoring for changes, transitions can be detected which indicate the location of the mobile device (i.e., indoor or outdoor). An increase in cellular signal strength and a decrease in WLAN signal strength indicates the user is transitioning outdoors where WLAN coverage may be limited. To reduce battery power consumption, background scanning is suspended or its frequency significantly lowered. Moving indoors is indicated by a decrease in cellular signal strength and an increase in WLAN signal strength. Background/Connectivity scanning frequency is increased to provide shorter time-to-connect to WLAN Networks for the user within the WLAN coverage area. | 09-01-2011 |
| Patent application number | Description | Published |
|---|
| 20090026553 | Tunnel Field-Effect Transistor with Narrow Band-Gap Channel and Strong Gate Coupling - A semiconductor device and the methods of forming the same are provided. The semiconductor device includes a low energy band-gap layer comprising a semiconductor material; a gate dielectric on the low energy band-gap layer; a gate electrode over the gate dielectric; a first source/drain region adjacent the gate dielectric, wherein the first source/drain region is of a first conductivity type; and a second source/drain region adjacent the gate dielectric. The second source/drain region is of a second conductivity type opposite the first conductivity type. The low energy band-gap layer is located between the first and the second source/drain regions. | 01-29-2009 |
| 20100059737 | Tunnel Field-Effect Transistors with Superlattice Channels - A semiconductor device includes a channel region; a gate dielectric over the channel region; a gate electrode over the gate dielectric; and a first source/drain region adjacent the gate dielectric. The first source/drain region is of a first conductivity type. At least one of the channel region and the first source/drain region includes a superlattice structure. The semiconductor device further includes a second source/drain region on an opposite side of the channel region than the first source/drain region. The second source/drain region is of a second conductivity type opposite the first conductivity type. At most, one of the first source/drain region and the second source/drain region comprises an additional superlattice structure. | 03-11-2010 |
| 20100327321 | Tunnel Field-Effect Transistor with Narrow Band-Gap Channel and Strong Gate Coupling - A semiconductor device and the methods of forming the same are provided. The semiconductor device includes a low energy band-gap layer comprising a semiconductor material; a gate dielectric on the low energy band-gap layer; a gate electrode over the gate dielectric; a first source/drain region adjacent the gate dielectric, wherein the first source/drain region is of a first conductivity type; and a second source/drain region adjacent the gate dielectric. The second source/drain region is of a second conductivity type opposite the first conductivity type. The low energy band-gap layer is located between the first and the second source/drain regions. | 12-30-2010 |
| 20110027959 | Tunnel Field-Effect Transistors with Superlattice Channels - A semiconductor device includes a channel region; a gate dielectric over the channel region; a gate electrode over the gate dielectric; and a first source/drain region adjacent the gate dielectric. The first source/drain region is of a first conductivity type. At least one of the channel region and the first source/drain region includes a superlattice structure. The semiconductor device further includes a second source/drain region on an opposite side of the channel region than the first source/drain region. The second source/drain region is of a second conductivity type opposite the first conductivity type. At most, one of the first source/drain region and the second source/drain region comprises an additional superlattice structure. | 02-03-2011 |
