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Krischke
Joachim Krischke, Mosbach DE
| Patent application number | Description | Published |
|---|---|---|
| 20100313718 | MACHINE TOOL FOR PROCESSING WORKPIECES - A machine tool for achieving a high degree of flexibility during workpiece processing comprises a machine bed with side walls arranged thereon, which respectively comprise a basic body with a front overhanging projection arranged thereon. On the side walls a tool spindle is arranged to be linearly movable by means of slides. Underneath the front overhanging projections a processing space is formed for the workpiece processing, in which a workpiece positioning unit is arranged. The processing space underneath the front overhanging projections is freely accessible, whereby depending on the processing task different workpiece positioning units can be arranged therein. | 12-16-2010 |
| 20110052341 | MACHINE TOOL WITH FEED AND REMOVAL DEVICE - A machine tool has a tool spindle which can be moved in an x-direction and a y-direction and a workpiece slide which can be moved in the z-direction and has a swiveling table which can be pivoted about an A-axis which is parallel to the x-axis. A feed and removal device is provided, which has an H-shaped pallet changing mechanism, which can be pivoted about a y1-axis which is parallel to the y-direction, a y1-pivot drive and a lift drive ( | 03-03-2011 |
Norbert Krischke, Muenchen DE
| Patent application number | Description | Published |
|---|---|---|
| 20100207206 | TRANSISTOR - A transistor has a cell array with two or more transistor cells, a temperature sensor, which is integrated in the cell array or is adjacent to the cell array, and an isolation structure. The isolation structure isolates the temperature sensor from the cell array, and has an isolation trench, which is arranged between the cell array and the temperature sensor. The distance between the temperature sensor and the active transistor cell that is closest to the temperature sensor corresponds approximately to the pitch between active transistor cells within the cell array. | 08-19-2010 |
| 20100230764 | INTEGRATED CIRCUIT HAVING FIELD EFFECT TRANSISTORS AND MANUFACTURING METHOD - An integrated circuit having field effect transistors and manufacturing method. One embodiment provides an integrated circuit including a first FET and a second FET. At least one of source, drain, gate of the first FET is electrically connected to the corresponding one of source, drain, gate of the second FET. At least one further of source, drain, gate of the first FET and the corresponding one further of source, drain, gate of the second FET are connected to a circuit element, respectively. A dopant concentration of a body along a channel of each of the first and second FETs has a peak at a peak location within the channel. | 09-16-2010 |
| 20110089528 | SEMICONDUCTOR HAVING OPTIMIZED INSULATION STRUCTURE AND PROCESS FOR PRODUCING THE SEMICONDUCTOR - A semiconductor having an optimized insulation structure which is simple and inexpensive to produce and can be made smaller than LOCOS insulation structures is disclosed. An implantation mask on a surface of a semiconductor substrate is used to implant elements into the semiconductor substrate, which elements, on thermal activation, form an insulation region together with the further elements of the semiconductor substrate. The thermal activation is effected by means of laser irradiation, during which the semiconductor substrate is briefly melted and then recrystallizes during the subsequent cooling, so that the implanted elements form the insulation region together with the further elements of the semiconductor substrate. | 04-21-2011 |
| 20110278667 | SEMICONDUCTOR COMPONENT ARRANGEMENT AND METHOD FOR PRODUCING THEREOF - A semiconductor component arrangement and method for producing thereof is disclosed. One embodiment provides at least one power semiconductor component integrated in a semiconductor body and at least one logic component integrated in the semiconductor body. The logic component includes a trench extending into the semiconductor body proceeding from a first side, at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric, and at least one source zone and at least one drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which at least one body zone of a second conduction type is arranged. | 11-17-2011 |
Norbert Krischke, Munich DE
| Patent application number | Description | Published |
|---|---|---|
| 20110163366 | Semiconductor Component Arrangement Comprising a Trench Transistor - Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least an gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps. | 07-07-2011 |
| 20110165755 | Semiconductor Component Arrangement Comprising a Trench Transistor - Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least an gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps. | 07-07-2011 |
Norbert Krischke, Munchen DE
| Patent application number | Description | Published |
|---|---|---|
| 20120007176 | High-Voltage Bipolar Transistor with Trench Field Plate - A bipolar transistor structure includes an epitaxial layer on a semiconductor substrate, a bipolar transistor device formed in the epitaxial layer and a trench structure formed in the epitaxial layer adjacent at least two opposing lateral sides of the bipolar transistor device. The trench structure includes a field plate spaced apart from the epitaxial layer by an insulating material. The bipolar transistor structure further includes a base contact connected to a base of the bipolar transistor device, an emitter contact connected to an emitter of the bipolar transistor device and isolated from the base contact and an electrical connection between the emitter contact and the field plate. | 01-12-2012 |