| Patent application number | Description | Published |
|---|
| 20090078554 | TECHNIQUES FOR MAKING HIGH VOLTAGE CONNECTIONS - Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts. | 03-26-2009 |
| 20090085504 | TECHNIQUES FOR CONTROLLING A CHARGED PARTICLE BEAM - Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an accelerator column, which may comprise a plurality of electrodes. The plurality of electrodes may have apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a voltage grading system. The voltage grading system may comprise a first fluid reservoir and a first fluid circuit. The first fluid circuit may have conductive connectors connecting to at least one of the plurality of electrodes. The voltage grading system may further comprise fluid in the first fluid circuit. The fluid may have an electrical resistance. | 04-02-2009 |
| 20090147435 | PARTICLE TRAP - An apparatus and method for trapping particles in a housing is disclosed. A high voltage terminal/structure is situated within a housing. A conductive material, having a plurality of holes, such as a mesh, is disposed a distance away from an interior surface of the housing, such as the floor of the housing, forming a particle trap. The conductive mesh is biased so that the electrical field within the trap is either non-existent or pushing toward the floor, so as to retain particles within the trap. Additionally, a particle mover, such as a fan or mechanical vibration device, can be used to urge particles into the openings in the mesh. Furthermore, a conditioning phase may be used prior to operating the high voltage terminal, whereby a voltage is applied to the conductive mesh so as to attract particles toward the particle trap. | 06-11-2009 |
| 20110094862 | TECHNIQUES FOR MAKING HIGH VOLTAGE CONNECTIONS - Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts. | 04-28-2011 |
| Patent application number | Description | Published |
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| 20090047801 | INTERFACING TWO INSULATION PARTS IN HIGH VOLTAGE ENVIRONMENT - Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing an insulation medium between a first part and a second part in a high voltage environment; and interfacing the first part and the second part by compressing the first part and the second part against the insulation medium. | 02-19-2009 |
| 20090050347 | INSULATED CONDUCTING DEVICE WITH MULTIPLE INSULATION SEGMENTS - Insulated conducting devices and related methods are disclosed. An insulated conducting device for a voltage structure comprises: a conductor connected to a voltage; and multiple insulation segments enclosing the conductor, the multiple insulation segments interfacing with one another. | 02-26-2009 |
| 20090057572 | Terminal Structures Of An Ion Implanter Having Insulated Conductors With Dielectric Fins - Terminal structures of an ion implanter having insulated conductors with dielectric fins are disclosed. In one particular exemplary embodiment, the terminal structures of an ion implanter may be realized with insulated conductors with one or more dielectric fins. For example, the ion implanter may comprise an ion source configured to provide an ion beam. The ion implanter may also comprise a terminal structure defining a cavity, wherein the ion source may be at least partially disposed within the cavity. The ion implanter may further comprise an insulated conductor having at least one dielectric fin disposed proximate an exterior portion of the terminal structure to modify an electric field. | 03-05-2009 |
| 20090057573 | TECHNIQUES FOR TERMINAL INSULATION IN AN ION IMPLANTER - Techniques for terminal insulation for an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an ion implanter comprising a terminal structure defining a terminal cavity. The ion implanter may also comprise a grounded enclosure defining a grounded cavity and the terminal structure may be at least partially disposed within the grounded cavity. The ion implanter may further comprise an intermediate terminal structure disposed proximate an exterior portion of the terminal structure and at least partially disposed within the grounded cavity. | 03-05-2009 |
| 20110094798 | INTERFACING TWO INSULATION PARTS IN HIGH VOLTAGE ENVIRONMENT - Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface. | 04-28-2011 |
