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Kraus, CA
Christopher Mark Kraus, Encinitas, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080215345 | Materials management system and method - A materials management system and method configured to handle materials events is provided. The materials management system can be configured to receive event information, comprising information pertaining to a hazardous materials event, to store data pertaining to a plurality of hazardous materials, to retrieve stored data based on the event information and to generate a materials event response based on the retrieved information. According to one embodiment, the materials management system can include an automated telephonic interface for accepting caller input and facilitating system responses. | 09-04-2008 |
David W. Kraus, Fresno, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100230924 | Mobile Elliptically Driven Device and Steering Mechanism - A steering mechanism is provided that steers by imparting a variable amount of toe or camber to a wheel, and is capable of imparting both toe and camber using a single mechanism. Some versions of the steering mechanism can provide extremely high stability during turns controlled by the simple leaning of the operator. Vehicles using the mechanism are provided, including lean-steered vehicles, and including a three-wheeled mobile elliptically driven device. | 09-16-2010 |
Jeff Kraus, Los Gatos, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090093748 | LOOP-TIP CATHETER - A hemodialysis catheter, including an elongate body with an outer wall enclosing an arterial lumen and a venous lumen, and a method of making same. A loop extends from a distal end of the body and defines an enclosed opening. An arterial inlet in fluid communication with the arterial lumen, and a venous outlet in fluid communication with the venous lumen, are positioned on the loop. | 04-09-2009 |
Joe Kraus, Palo Alto, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090063953 | Collaborative Web Page Authoring - Collaborative web pages are enabled which allow every page on a website to be editable by an author and by others the author lets access the site. Web pages can send and receive email messages. Users can attach files to pages. Structure queries and page-building are enabled by use of various forms and form elements. | 03-05-2009 |
Philip Kraus, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110259391 | REAL TIME PROCESS MONITORING AND CONTROL FOR SEMICONDUCTOR JUNCTIONS - A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group IIIA element and at least one Group VIA element are deposited on a substrate or on a layer optional disposed on the substrate such as a back-electrode. During a second deposition during a second period of time, at least one Group IB element and the at least one group VIA element are deposited on the substrate or the optional layer. The one Group IB element combines with the Group VIA element to form a IB | 10-27-2011 |
Philip Allan Kraus, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090042353 | INTEGRATED CIRCUIT FABRICATION PROCESS FOR A HIGH MELTING TEMPERATURE SILICIDE WITH MINIMAL POST-LASER ANNEALING DOPANT DEACTIVATION - Post-laser annealing dopant deactivation is minimized by performing certain silicide formation process steps prior to laser annealing. A base metal layer of nickel is deposited on the source-drain regions and the gate electrode, followed by deposition of an overlying layer of a metal having a higher melting temperature than nickel. Thereafter, a rapid thermal process is performed to heat the substrate sufficiently to form metal silicide contacts at the top surfaces of the source-drain regions and of the gate electrode. The method further includes removing the remainder of the metal-containing layer and then depositing an optical absorber layer over the substrate prior to laser annealing. | 02-12-2009 |
| 20090042354 | INTEGRATED CIRCUIT FABRICATION PROCESS USING A COMPRESSION CAP LAYER IN FORMING A SILICIDE WITH MINIMAL POST-LASER ANNEALING DOPANT DEACTIVATION - Post-laser annealing dopant deactivation is minimized by performing certain silicide formation process steps prior to laser annealing. A base metal layer is deposited on the source-drain regions and the gate electrode, followed by deposition of an overlying compression cap layer, to prevent metal agglomeration at the silicon melting temperature. Thereafter, a rapid thermal process is performed to heat the substrate sufficiently to form metal silicide contacts at the top surfaces of the source-drain regions and of the gate electrode. The method further includes removing the remainder of the metal-containing layer and then depositing an optical absorber layer over the substrate prior to laser annealing near the silicon melting temperature. | 02-12-2009 |
| 20090042376 | INTEGRATED CIRCUIT FABRICATION PROCESS WITH MINIMAL POST-LASER ANNEALING DOPANT DEACTIVATION - Post-laser annealing dopant deactivation is minimized by performing certain low temperature process steps prior to laser annealing. | 02-12-2009 |
Phillip Allan Kraus, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090090952 | PLASMA SURFACE TREATMENT FOR SI AND METAL NANOCRYSTAL NUCLEATION - A device, such as a nonvolatile memory device, and methods for forming the device in an integrated process tool are provided. The method includes depositing a tunnel oxide layer on a substrate, exposing the tunnel oxide layer to a plasma so that the plasma alters a morphology of a surface and near surface of the tunnel oxide to form a plasma altered near surface. Nanocrystals are then deposited on the altered surface of the tunnel oxide. | 04-09-2009 |