Patent application number | Description | Published |
20080204619 | Display device - A display device in which gate drive circuits are formed at both sides of an effective screen, and a static charge shield conductive film is formed to cover the gate drive circuits. In the manufacturing step and after producing the display device, the constant voltage is applied to the static charge shield conductive film via the common pad, the earth connection line and the like. | 08-28-2008 |
20080303762 | Display device - A display device which arranges a memory part for every display pixel is configured to prevent a charge from remaining in liquid crystal when a power source is turned off. Each display pixel includes a memory part for storing video data, a pixel electrode, and a switch part for selectively applying a first video voltage or a second video voltage different from the first video voltage to the pixel electrode corresponding to the video data stored in the memory part. The display device further includes a reset circuit for allowing the first video voltage and the second video voltage to have the same voltage when a power source of the display device is turned off. | 12-11-2008 |
20090045406 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A semiconductor device which can realize a diode function is provided with a manufacturing process of a polysilicon thin film transistor and without adding a dedicated process. A semiconductor device is provided having a semiconductor layer comprising a low-concentration p-type polysilicon region formed over a substrate, the semiconductor device comprising a high-concentration p-type polysilicon region and a high-concentration n-type polysilicon region which are formed over the substrate on both sides of the low-concentration p-type polysilicon region, an insulating film which is formed over the high-concentration p-type polysilicon region, the low-concentration p-type polysilicon region, and the high-concentration n-type polysilicon region, and a control electrode which is formed over the insulating film and over the low-concentration p-type polysilicon region, wherein the control electrode is electrically connected to one of the high-concentration p-type polysilicon region and the high-concentration n-type polysilicon region. | 02-19-2009 |
20090073149 | Display device - The gate electrode is formed above the polycrystalline semiconductor layer through the gate insulating film. The polycrystalline semiconductor layer includes a first region overlapping with the gate electrode in plan view. The first region is sandwiched between the second region and the third region. The second region of the polycrystalline semiconductor layer includes a first impurity diffusion region and two second impurity diffusion regions opposite in conductivity type to the first impurity diffusion region. The first region and the first impurity diffusion region are in contact with each other at a first boundary. The first region and the two second impurity diffusion regions are in contact with each other at second boundaries. The two second impurity diffusion regions sandwiching the first impurity diffusion region are provided along the gate electrode. Thus, a leak current is suppressed. | 03-19-2009 |
20090213057 | DISPLAY DEVICE - Provided is a display device including a level shift circuit, which includes a thin film transistor having a polycrystalline semiconductor layer, and which realizes a reliable operation even when a threshold of the thin film transistor varies. The display device includes: a board; and the level shift circuit which includes the thin film transistor having the polycrystalline semiconductor layer, and is formed on the board, in which the level shift circuit includes: a plurality of source-input level shift circuits including a plurality of unit level shift circuits having drain resistors different in value from one another; and a selection circuit, which selects one of outputs from the plurality of unit level shift circuits as an output from a normally operated unit level shift circuit. | 08-27-2009 |
20090213060 | DISPLAY DEVICE - A display device includes, in each pixel including a pixel electrode and a counter electrode with liquid crystal therebetween, a memory part which stores video data written to the pixel electrode and a switch part which applies a first video voltage to the counter electrode and selects and applies the first video voltage or a second video voltage which is obtained by inverting the first video voltage to the pixel electrode in accordance with the video data stored in the memory part, in which a liquid crystal inversion AC cycle during which the first video voltage and the second video voltage are driven such that a magnitude of the first video voltage and a magnitude of the second video voltage are exchanged in a predetermined cycle is set longer than a rewrite cycle of video data to the pixel electrode. | 08-27-2009 |
20090213061 | Display device - A display device is provided comprising a plurality of pixels disposed in a matrix form in a display area of a substrate, each of the plurality of pixels having a memory which stores written data, a scan line which is provided common to pixels arranged along a row direction and through which a scan signal is supplied to the pixels, and an image line which is provided common to pixels arranged along a column direction and through which an image signal is supplied to the pixels, wherein the scan signal is supplied to the scan line through a vertical address circuit or a vertical shift register circuit, and data is supplied to the image line through a horizontal scan shift register circuit. | 08-27-2009 |
20090256792 | Display Device - An object of the present invention is to increase the reliability in the level shift operation in a display device provided with a level shift circuit. The display device according to the present invention is characterized in that the above described level shift circuit comprises: a first thin film transistor having a semiconductor layer formed of a polysilicon layer; a waveform rectifying circuit connected to a second electrode of the above described first thin film transistor; and a constant current source and a switching element connected between the second electrode of the above described first thin film transistor and a reference power source, wherein a bias voltage is inputted into a control electrode of the above described first thin film transistor and an input signal is inputted into a first electrode of the above described first thin film transistor. | 10-15-2009 |
20090322731 | DISPLAY DEVICE - A display device includes a memory unit formed in each pixel to store video data and including a first inverter circuit whose input terminal is connected to a first node and whose output terminal is connected to a second node and a second inverter circuit whose input terminal is connected to the second node and whose output terminal is connected to the first node, a first transistor connected between the output terminal of the second inverter circuit and the video line, and a second transistor connected between the first node and the video line, in which at the time of reading the video data, the first transistor is turned ON, and the second transistor is turned OFF, to output the video data stored in the memory unit to the video line. | 12-31-2009 |
20100079435 | DISPLAY DEVICE - The number of wirings between a scanning circuit and a plurality of scanning lines is decreased with a more simple circuit configuration than a conventional one. The scanning lines are grouped into kN× . . . ×k2 groups. First to Nth groups of gate wirings are included, each of the first to Nth groups being composed of kn (1≦n≦N) gate wirings. A scanning line drive circuit outputs a first selection scanning voltage which selects the scanning lines in each of the groups every horizontal scanning period to the first group of k1 gate wirings, outputs a second selection scanning voltage which selects the scanning lines in one of groups in a second stage where k2 groups constitute one unit every k1 horizontal scanning periods to the second group of k2 gate wirings, and outputs an mth selection scanning voltage which selects the scanning lines in one of groups in an mth stage where k (m−1) groups in a (m−1)th stage constitute one unit every (k (m−1)× . . . ×k1) horizontal scanning periods to an mth group of km gate wirings. | 04-01-2010 |
20100097364 | DISPLAY DEVICE - An object of the present invention is to increase the speed of the level shifting operation in a display device having a level shift circuit formed of polysilicon thin film transistors. The present invention provides a display device having a level shift circuit wherein the above described level shift circuit has: a thin film transistor having a semiconductor layer formed of a polysilicon layer; a load resistance element connected between a second electrode of the above described thin film transistor and a reference power supply; and a waveform rectifying circuit connected to the second electrode of the above described thin film transistor, and a diode element of which the anode region is connected to the first electrode of the above described thin film transistor and of which the cathode region is connected to the second electrode of the above described thin film transistor. | 04-22-2010 |
20100265226 | DISPLAY DEVICE - A control electrode of j (1≦j≦N−1)th transistor is connected to gate lines of (j+1)th group. A scanning line drive circuit outputs a first selection scanning voltage selecting scanning lines within each of groups for every 1 horizontal scanning period to gate lines of k | 10-21-2010 |
20110006192 | OPTICAL SENSOR ARRAY AND OPTICAL SENSOR CIRCUIT - Each optical sensor element includes an upper electrode, a lower electrode, and a light dependent variable resistance element formed of amorphous silicon. Each optical sensor pixel includes: a capacitive element between the lower electrode and a reference voltage line; a first transistor inputting a first power source voltage to a second electrode, connecting a first electrode to the lower electrode, and inputting a second clock to a control electrode; a second transistor inputting a second power source voltage to a second electrode, and connecting a control electrode to the lower electrode; and a third transistor connecting a second electrode to a first electrode of the second transistor, connecting a first electrode to the output line, and inputting a first clock to a control electrode. | 01-13-2011 |
20110216214 | PHOTOSENSOR DEVICE - The present invention provides a photosensor device including: a photodiode array in which photodiodes are arranged in an array shape; scanning lines which are coupled to first electrodes of the photodiodes in respective lines of the photodiode array; read lines which are coupled to second electrodes of the photodiodes in respective columns of the photodiode array; a scanning circuit which is coupled to the scanning lines and sequentially supplies a selected scanning signal to the respective scanning lines in each horizontal scanning period; and a signal processing circuit which is coupled to the read lines and loads each voltage fluctuation of the read lines in one horizontal scanning period as signal voltage when reading a signal, wherein each of the photodiodes is made of amorphous silicon or microcrystal silicon, and forward bias voltage is applied to each of the photodiodes when reading a signal. | 09-08-2011 |
20120074297 | PHOTOSENSOR AND PHOTOSENSOR ARRAY - A photosensor array includes plural photosensor pixels. Each of the photosensor pixels includes a lower electrode, an amorphous silicon film, an n-type amorphous silicon film, and an upper electrode. The photosensor array includes plural scanning lines connected to the upper electrodes, plural read lines connected to the lower electrodes, a scanning circuit that is connected to the plural scanning lines, and sequentially supplies a selection scanning signal of a first voltage to the respective scanning lines, a first unit that inputs a second voltage higher than the first voltage to the plural read lines in a blanking period of one horizontal scanning period, and thereafter puts the plural read lines into the floating state, and a second unit that outputs a voltage change in each of the read lines within one horizontal scanning period as the sensor output voltage of the photosensor pixel. | 03-29-2012 |
20120074298 | PHOTOSENSOR AND PHOTOSENSOR ARRAY - A photosensor includes a lower electrode formed of a metal film, an amorphous silicon film disposed on the lower electrode, an n-type amorphous silicon film disposed on the amorphous silicon film, an upper electrode that is disposed on the n-type amorphous silicon film, and receives a first reference voltage, a capacitive element connected between the lower electrode and a second reference voltage, a switch circuit that inputs a first supply voltage to the lower electrode in an on-state, and puts the lower electrode into a floating state in an off-state, and a detector circuit that detects a voltage change in the lower electrode after irradiating the amorphous silicon film for a given period with light when the switch circuit is on. | 03-29-2012 |
20140028653 | DISPLAY DEVICE - In a display device using an address decoder circuit as a drive circuit, a malfunction is prevented even when a display drive frequency becomes high. The display device includes a plurality of first scanning lines inputting a scanning voltage to a plurality of pixels, a plurality of second scanning lines inputting a scanning voltage to the plurality of pixels, and a scanning line drive circuit supplying the scanning voltages to the pluralities of first and second scanning lines. When N is an integer of 2 or more, the first scanning lines and the second scanning lines are grouped into kN× . . . ×k2 groups. An address decoder circuit that drives scanning lines in each of the groups is composed of a CMOS circuit. | 01-30-2014 |