Patent application number | Description | Published |
20080217712 | Apparatus and method for forming optical black pixels with uniformly low dark current - An apparatus and method for forming optical black pixels having uniformly low dark current. Optical Black opacity is increased without having to increase Ti/TiN layer thickness. A hybrid approach is utilized combining a Ti/TiN OB layer in conjunction with in-pixel metal stubs that further occlude the focal radius of each pixel's incoming light beam. Additional metal layers can be used to increase the opacity into the infrared region. | 09-11-2008 |
20080218608 | Apparatus and method for reducing edge effect in an image sensor - A method and apparatus for forming dummy pixels exhibiting electrical characteristics virtually identical to the clear pixels of the imaging array. Arrays of such dummy pixels are used to form regions that isolate the main imaging array and sub-arrays of optical black pixels while preventing edge effects. The dummy pixels are preferably clear but can also be covered with optical black. By setting quiescent operation in soft reset, the dummy pixels exhibit the diode ideality and R | 09-11-2008 |
20120267511 | Image sensor with hybrid heterostructure - An image sensor architecture provides an SNR in excess of 100 dB, without requiring the use of a mechanical shutter. The circuit components for an active pixel sensor array are separated and arranged vertically in at least two different layers in a hybrid chip structure. The top layer is preferably manufactured using a low-noise PMOS manufacturing process, and includes the photodiode and amplifier circuitry for each pixel. A bottom layer is preferably manufactured using a standard CMOS process, and includes the NMOS pixel circuit components and any digital circuitry required for signal processing. By forming the top layer in a PMOS process to optimized for forming low-noise pixels, the pixel performance can be greatly improved, compared to using CMOS. In addition, since the digital circuitry is now separated from the imaging circuitry, it can be formed using a standard CMOS process, which has been optimized for circuit speed and manufacturing cost. By combining the two layers into a stacked structure, the top layer (and any intermediate layer(s)) acts to optically shield the lower layer, thereby allowing charge to be stored and shielded without the need for a mechanical shutter. | 10-25-2012 |
20130334403 | IMAGE SENSOR WITH HYBRID HETEROSTRUCTURE - An image sensor architecture for an active pixel sensor array are separated and arranged vertically in at least two different layers in a hybrid chip structure. The top layer includes the photodiode and amplifier circuitry for each pixel. A bottom includes the pixel circuit components and any digital circuitry required for signal processing. By forming the top layer in a process optimized for forming low-noise pixels, the pixel performance can be greatly improved. In addition, since the digital circuitry is now separated from the imaging circuitry, it can be formed using a process which has been optimized for circuit speed and manufacturing cost. By combining the two layers into a stacked structure, the top layer (and any intermediate layer(s)) acts to optically shield the lower layer, thereby allowing charge to be stored and shielded without the need for a mechanical shutter. | 12-19-2013 |
Patent application number | Description | Published |
20080218602 | Method and apparatus for improving and controlling dynamic range in an image sensor - A method and apparatus for an electronic image sensor having a base exposure, followed by a second or multiple exposures that are formed during signal readout. A timing controller controls the signal readout, such that as each line is read, the second and subsequent exposures are subsequently added to the base exposure to enrich the dynamic range. The image sensor may further include an analog-to-digital converter and noise suppression to further enhance the efficacy of the dynamic range enrichment. The system may also include additional signal processing and scaling functions. | 09-11-2008 |
20090128677 | Dual sensitivity image sensor - A dual sensitivity image sensor provides a standard mode and a high-sensitivity mode of operation via iSoC integration. In addition to boosting sensitivity, the high sensitivity mode also reduces temporal noise thereby optimally boosting the Signal-to-Noise Ratio (SNR) of the image sensor. The circuit does not significantly increase pixel complexity and requires minimal changes to the support circuits in the iSoC including the addition of support and control circuitry to facilitate seamless mode change. | 05-21-2009 |
20100309349 | High sensitivity color filter array - A color filter array (CFA) and image processing system wherein a color filter overlaying an image sensor has a luminance element (i.e. green filter in RGB space, or yellow in CMY space) that is made larger than the other two chrominance elements (i.e. red, blue or cyan, magenta). Additionally, overlaying micro-lenses may be sized to correspond to the relative sizes of the underlying color filters. The optimized filter array is compatible with existing de-mosaic image processing. | 12-09-2010 |
Patent application number | Description | Published |
20100243427 | FABRICATION OF LOW DEFECTIVITY ELECTROCHROMIC DEVICES - Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition. | 09-30-2010 |
20100245973 | ELECTROCHROMIC DEVICES - Prior electrochromic devices frequently suffer from poor reliability and poor performance. Some of the difficulties result from inappropriate design and construction of the devices. In order to improve device reliability two layers of an electrochromic device, the counter electrode layer and the electrochromic layer, can each be fabricated to include defined amounts of lithium. Further, the electrochromic device may be subjected to a multistep thermochemical conditioning operation to improve performance. Additionally, careful choice of the materials and morphology of some components of the electrochromic device provides improvements in performance and reliability. In some devices, all layers of the device are entirely solid and inorganic. | 09-30-2010 |
20110211247 | FABRICATION OF LOW DEFECTIVITY ELECTROCHROMIC DEVICES - Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition. | 09-01-2011 |
20150060264 | FABRICATION OF LOW DEFECTIVITY ELECTROCHROMIC DEVICES - Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition. | 03-05-2015 |