Patent application number | Description | Published |
20120097527 | FILM FORMATION APPARATUS AND FILM FORMING METHOD - A film formation apparatus includes: a chamber in which both a body to be processed and a target are disposed; a first magnetic field generation section generating a magnetic field; and a second magnetic field generation section including a first generation portion to which a current defined as “Iu” is applied and a second generation portion to which a current defined as “Id” is applied, the first generation portion being disposed at a position close to the target, the second generation portion being disposed at a position close to the body to be processed, the second magnetic field generation section applying the currents to the first generation portion and the second generation portion so as to satisfy the relational expression Id04-26-2012 | |
20120103801 | FILM FORMATION APPARATUS - A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section. | 05-03-2012 |
20120111722 | FILM-FORMING APPARATUS - There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state. | 05-10-2012 |
20120118732 | FILM FORMATION APPARATUS - A film formation apparatus includes: a chamber having a side wall and an inner space in which both a body to be processed and a target are disposed a first magnetic field generation section generating a magnetic field in the inner space a second magnetic field generation section disposed at a position close to the target, the second magnetic field generation section generating a magnetic field so as to allow perpendicular magnetic lines of force thereof to pass through a position adjacent to the target; and a third magnetic field generation section disposed at a position close to the body to be processed, the third magnetic field generation section generating a magnetic field so as to induce the magnetic lines of force to the side wall of the chamber. | 05-17-2012 |
20120121818 | COATING SURFACE PROCESSING METHOD AND COATING SURFACE PROCESSING APPARATUS - A coating surface processing method includes forming a coating on the entire surface of a base body that has fine holes or fine grooves formed on the to-be-filmed surface, including the inner wall surfaces and the inner bottom surfaces of the holes or the grooves, and flattening the coating formed on the inner wall surfaces of the holes or the grooves by carrying out a plasma processing on the surface of the coating. | 05-17-2012 |
20140048413 | FILM-FORMING APPARATUS - There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state. | 02-20-2014 |
20140332959 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: a groove portion formation step of forming a groove portion in a base; a barrier layer formation step of forming a barrier layer that covers at least an inner wall surface of the groove portion; a seed layer formation step of forming a seed layer that covers the barrier layer; and a burial step of burying a conductive material in an inside region of the seed layer, wherein the seed layer is made of Cu, and the conductive material is made of Cu. | 11-13-2014 |
20150221552 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu. | 08-06-2015 |