Patent application number | Description | Published |
20080203278 | Solid state imaging device and imaging apparatus - A solid state imaging device having an image area in which a plurality of light receiving pixels is arranged on a semiconductor substrate of a first conductive type is disclosed. The device includes: a plurality of photosensor parts formed by providing on the semiconductor substrate a light receiving area and a photoelectric conversion area both configuring the light receiving pixel; a first well region formed on the opposite side of the light receiving area, having a second conductive type opposite to the first conductive type, and forming an overflow barrier; a second well region of the second conductive type formed in an area except a place corresponding to the photosensor part on the opposite side of the photoelectric conversion area; and a first conductive region formed in an area corresponding to the photosensor part on the opposite side of the photoelectric conversion area. | 08-28-2008 |
20080218598 | Imaging method, imaging apparatus, and driving device - A driving device includes a driving control unit that reads out the signal charge generated by at least the charge generating section for a low-sensitivity pixel signal to the charge transfer section, after the predetermined timing, continues incidence of the electromagnetic wave and, after continuing the incidence of the electromagnetic wave, reads out the signal charge generated by at least the charge generating section for a high-sensitivity pixel signal to the charge transfer section, transfers the signal charge read out to the charge transfer section through the charge transfer section, and, concerning at least one of the signal charges for the high-sensitivity pixel signal and the low-sensitivity pixel signal, every time the signal charge is read out to the charge transfer section, transfers the signal charge read out to the charge transfer section through the charge transfer section without retaining the signal charge in the charge transfer section. | 09-11-2008 |
20080315340 | SOLID-STATE IMAGING DEVICE AND METHOD OF FABRICATING THE SAME - A solid-state imaging device includes a layer including an on-chip lens above a sensor section, and the layer including the on-chip lens is composed of an inorganic film which transmits ultraviolet light. The layer including the on-chip lens may further include a planarizing film located below the on-chip lens. A method of fabricating a solid-state imaging device includes the steps of forming a planarizing film composed of a first inorganic film, forming a second inorganic film on the planarizing film, forming a lens-shaped resist layer on the second inorganic film, and etching back the resist layer to form an on-chip lens composed of the second inorganic film. The first inorganic film constituting the planarizing film and the second inorganic film constituting the on-chip lens preferably transmit ultraviolet light. | 12-25-2008 |
20090153708 | SOLID-STATE IMAGING DEVICE AND CAMERA - A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well. | 06-18-2009 |
20090194794 | SOLID-STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREOF - Crosstalk between the adjacent pixels can be prevented by a structure in which an overflow barrier is provided at the deep portion of a substrate. | 08-06-2009 |
20100085460 | DEVICE AND METHOD FOR PROCESSING PHOTOGRAPHIC IMAGE DATA - Disclosed herein is a photographing device that includes a number of light-receiving elements, a number of vertical transfer registers, a first drive-voltage applying electrode, and a second drive-voltage applying electrode. The light-receiving elements are arranged in a horizontal direction and a vertical direction. The vertical transfer registers transfers the electric charges accumulated in the light-receiving elements in the vertical direction. The first drive-voltage applying electrode is arranged parallel to the vertical transfer registers, for applying a drive voltage to a specific one of the vertical transfer registers. The second drive-voltage applying electrode is arranged perpendicular to the vertical transfer registers, for applying a second drive voltage to the vertical transfer registers at the same time. The electric charges accumulated in the light-receiving elements are transferred to the vertical transfer registers, due to the voltage output from the first drive-voltage applying electrode or the second drive-voltage applying electrode, or the voltages output from both electrodes. Therefore, the light-receiving elements can have different sensitivities, and the photographing device can photograph dynamic scenes in a broad dynamic range. | 04-08-2010 |
20100123813 | Solid-state imaging device and readout method thereof - A solid-state imaging device includes: a plurality of pixels arrayed in the vertical transfer direction and in the horizontal transfer direction; a vertical CCD shift register disposed between two pixels adjacent in the horizontal transfer direction of the plurality of pixels; a first channel stop portion used for separation between pixels, formed between the two pixels adjacent in the horizontal transfer direction, and pixels adjacent to the two pixels adjacent in the horizontal transfer direction, in the horizontal transfer direction; and a readout gate portion and a second channel stop portion, formed in a direction parallel to the vertical transfer direction between the pixels and the vertical CCD shift register, with the two pixels adjacent in the horizontal transfer direction sharing the vertical CCD shift register, and with an insulating layer which is thicker than the gate insulating layer of the vertical CCD shift register being formed above the first channel stop portion. | 05-20-2010 |
20110216212 | SOLID-STATE IMAGING DEVICE, METHOD OF FABRICATING SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a substrate, a photoelectric conversion element provided on the light incidence side of the substrate and including a photoelectric conversion film sandwiched between a first electrode provided separately for each of pixels, and a second electrode provided opposite the first electrode, the photoelectric conversion film being made of an organic material or an inorganic material and generating a signal charge according to the quantity of incident light, an amplifier transistor having an amplifier gate electrode connected to the first electrode, and a voltage control circuit that is connected to the second electrode, and supplies a desired voltage to the second electrode. | 09-08-2011 |
20110242349 | SOLID-STATE IMAGE CAPTURING DEVICE AND ELECTRONIC DEVICE - A solid-state image capturing device includes: a semiconductor substrate having a photosensitive surface including a matrix of pixels as respective photoelectric converters; and a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance variable depending on the intensity of applied light in a predetermined wavelength range; wherein the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the pixels are read from all the pixels. | 10-06-2011 |
20110285881 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC EQUIPMENT - A solid-state imaging device includes: a semiconductor substrate having a light receiving surface sectioned for red, green, blue, and white pixels arranged in a matrix with photodiodes formed thereon; color filters formed on the semiconductor substrate in light incident paths to the photodiodes of the respective formation regions of the red, green, and blue pixels and respectively transmitting lights in red, green, and blue wavelength regions; and photochromic films formed on the semiconductor substrate in the light incident path to the photodiodes in the formation regions of at least some of the white pixels, and containing a photochromic material having light transmittance varying in response to incident light intensity in a predetermined wavelength region, wherein a half period of the light transmittance of the photochromic films is shorter than one frame as a period in which pixel signals obtained in the pixels are read out with respect to all pixels. | 11-24-2011 |
20120025061 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film. | 02-02-2012 |
20120113292 | SOLID-STATE IMAGING DEVICE AND CAMERA - A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well. | 05-10-2012 |
20130334402 | SOLID-STATE IMAGINGELEMENT, CALIBRATION METHOD OF SOLID-STATE IMAGINGELEMENT, SHUTTER DEVICE, AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state imaging element including: a plurality of pixels including a photoelectric conversion section; and a nano-carbon laminated film disposed on a side of a light receiving surface of the photoelectric conversion section and formed with a plurality of nano-carbon layers, transmittance of light and a wavelength region of transmissible light changing in the nano-carbon laminated film according to a voltage applied to the nano-carbon laminated film. | 12-19-2013 |
20140024164 | SOLID-STATE IMAGE CAPTURING DEVICE AND ELECTRONIC DEVICE - A solid-state image capturing device including: a semiconductor substrate having a photosensitive surface including a matrix of pixels as respective photoelectric converters; and a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance variable depending on the intensity of applied light in a predetermined wavelength range; wherein the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the pixels are read from all the pixels. | 01-23-2014 |
20140240557 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC EQUIPMENT - A solid-state imaging device includes: a semiconductor substrate having a light receiving surface sectioned for red, green, blue, and white pixels arranged in a matrix with photodiodes formed thereon; color filters formed on the semiconductor substrate in light incident paths to the photodiodes of the respective formation regions of the red, green, and blue pixels and respectively transmitting lights in red, green, and blue wavelength regions; and photochromic films formed on the semiconductor substrate in the light incident path to the photodiodes in the formation regions of at least some of the white pixels, and containing a photochromic material having light transmittance varying in response to incident light intensity in a predetermined wavelength region, wherein a half period of the light transmittance of the photochromic films is shorter than one frame as a period in which pixel signals obtained in the pixels are read out with respect to all pixels. | 08-28-2014 |
20140362265 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film. | 12-11-2014 |