Patent application number | Description | Published |
20100112491 | METHOD FOR MANUFACTURING OPTICAL DISC MASTER AND METHOD FOR MANUFACTURING OPTICAL DISC - A method for manufacturing an optical disc master using an existing exposure system, and a method for manufacturing an optical disc having higher recording capacity. The method for manufacturing an optical disc, using a master to produce the optical disc having an irregular pattern thereon, the master being produced by the steps of forming a resist layer composed of a resist material including an incomplete oxide of a transition metal such as W or Mo on a substrate, the oxygen content of the incomplete oxide being smaller than the oxygen content of the stoichiometric composition corresponding to a valence of the transition metal; selectively exposing the resist layer with laser according to a recording signal pattern using a light source with an irradiation power that is less than an irradiation threshold power at which exposure of the resist starts; and developing the resist layer to form the predetermined irregular pattern. | 05-06-2010 |
20100135060 | MEMORY DEVICE AND STORAGE APPARATUS - A memory device | 06-03-2010 |
20100259967 | MEMORY CELL - A memory cell is provided, in which a resistance value is appropriately controlled, thereby a variable resistance element may be applied with a voltage necessary for changing the element into a high or low resistance state. A storage element | 10-14-2010 |
20110031466 | SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF MANUFACTURING THE SAME - Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of which either a surface of the first electrode or a surface of the ion source layer is oxidized to form a resistance change type memory layer in an interface between the first electrode and the ion source interface are arranged in a array. | 02-10-2011 |
20110073825 | MEMORY DEVICE AND STORAGE APPARATUS - A memory device | 03-31-2011 |
20110194329 | MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE - A memory component includes: a first electrode; a memory layer; and a second electrode which are provided in that order, wherein the memory layer includes an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. | 08-11-2011 |
20110273696 | METHOD FOR MANUFACTURING OPTICAL DISC MASTER AND METHOD FOR MANUFACTURING OPTICAL DISC - An apparatus for manufacturing an optical disc master with (a) a turntable upon which is received a disc having a resist layer composed of a resist material including an incomplete oxide of a transition metal on a substrate, the oxygen content of the incomplete oxide being smaller than the oxygen content of the stoichiometric composition corresponding to a valence of the transition metal; and (b) an exposure system operatively configured to expose the resist layer to a light beam according to a recording signal pattern, the light beam has an irradiation power that is less than an irradiation threshold power at which exposure of the resist starts. | 11-10-2011 |
20110274895 | METHOD FOR MANUFACTURING OPTICAL DISC MASTER AND METHOD FOR MANUFACTURING OPTICAL DISC - An optical disc master having a resist layer composed of a resist material including an incomplete oxide of a transition metal on a substrate, the oxygen content of the incomplete oxide being smaller than the oxygen content of the stoichiometric composition corresponding to a valence of the transition metal, wherein, (a) the resist layer selectively exposed, according to a recording signal pattern, to a light beam with an irradiation power that is less than an irradiation threshold power at which exposure of the resist starts, and (b) the resist layer is formed into a predetermined irregular pattern. | 11-10-2011 |
20110279793 | METHOD FOR MANUFACTURING OPTICAL DISC MASTER AND METHOD FOR MANUFACTURING OPTICAL DISC - An apparatus for manufacturing an optical disc master, having (a) a turntable upon which is received a disc having a resist layer composed of a resist material, the resist material comprising an incomplete oxide of a transition metal on a substrate, the oxygen content of the incomplete oxide being smaller than the oxygen content of the stoichiometric composition corresponding to a valence of the transition metal, which increases the absorption of ultraviolet rays and visible light rays, the resist material being an amorphous inorganic material containing an oxide; and (b) an exposure system operatively configured to selectively expose the resist layer to ultraviolet rays or visible light. | 11-17-2011 |
20120008370 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element and a memory device with improved controllability over resistance change by applied voltage are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer. A resistance value of the resistance change layer is changeable in response to a composition change by applied voltage to the first and second electrodes | 01-12-2012 |
20120294063 | MEMORY ELEMENT AND MEMORY DEVICE - There are provided a memory element and a memory device excellently operating at a low current, and having the satisfactory retention characteristics. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and being in a single- or multi-layer structure including a layer containing a highest percentage of tellurium (Te) as an anionic component, and an ion source layer disposed on the second electrode side, and containing a metallic element and one or more chalcogen elements including tellurium (Te), sulfur (S), and selenium (Se) with aluminum (Al) of 27.7 atomic % or more but 47.4 atomic % or less. | 11-22-2012 |
20130240818 | MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE - A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. | 09-19-2013 |
20130256626 | SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF MANUFACTURING THE SAME - Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of which either a surface of the first electrode or a surface of the ion source layer is oxidized to form a resistance change type memory layer in an interface between the first electrode and the ion source interface are arranged in a array. | 10-03-2013 |
20140021434 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element and a memory device, the memory element including a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer. A resistance value of the resistance change layer is changeable in response to a composition change by applied voltage to the first and second electrodes | 01-23-2014 |
20140183438 | MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE - A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. | 07-03-2014 |