Patent application number | Description | Published |
20090039706 | INPUT AND OUTPUT POWER MODULES CONFIGURED TO PROVIDE SELECTIVE POWER TO AN UNINTERRUPTIBLE POWER SUPPLY - An uninterruptible power supply (“UPS”) includes an input module having a plurality of inputs, and at least one jumper element configured to selectively couple at least one input of the plurality of inputs to at least one other input of the plurality of inputs. The plurality of inputs and the at least one jumper element may be constructed and arranged to selectively achieve the following configurations: single power feed, single phase input and single phase output; dual power feed, single phase input and single phase output; single power feed, three phase input and single phase output; dual power feed, three phase input and single phase output; single power feed, three phase input and three phase output; and dual power feed, three phase input and three phase output. Other embodiments and methods of selectively achieving multiple power configurations are also disclosed. | 02-12-2009 |
20090231892 | UNINTERRUPTIBLE POWER SUPPLY - An uninterruptible power supply (UPS) system includes an AC power input configured to receive AC power from a single-phase AC power source or a multi-phase AC power source, a DC power source, an output circuit including a power output, a controllable switch configured to selectively couple at least one of the AC power input and the DC power source to the output circuit, and a processor coupled and configured to affect operation of the output circuit depending upon which of single-phase and multi-phase operation of the UPS is indicated. | 09-17-2009 |
20100314944 | INPUT AND OUTPUT POWER MODULES CONFIGURED TO PROVIDE SELECTIVE POWER TO AN UNINTERRUPTIBLE POWER SUPPLY - An uninterruptible power supply (“UPS”) includes an input module having a plurality of inputs, and at least one jumper element configured to selectively couple at least one input of the plurality of inputs to at least one other input of the plurality of inputs. The plurality of inputs and the at least one jumper element may be constructed and arranged to selectively achieve the following configurations: single power feed, single phase input and single phase output; dual power feed, single phase input and single phase output; single power feed, three phase input and single phase output; dual power feed, three phase input and single phase output; single power feed, three phase input and three phase output; and dual power feed, three phase input and three phase output. Other embodiments and methods of selectively achieving multiple power configurations are also disclosed. | 12-16-2010 |
20110043042 | UNINTERRUPTIBLE POWER SUPPLY - An uninterruptible power supply (UPS) system includes an AC power input configured to receive AC power from a single-phase AC power source or a multi-phase AC power source, a DC power source, an output circuit including a power output, a controllable switch configured to selectively couple at least one of the AC power input and the DC power source to the output circuit, and a processor coupled and configured to affect operation of the output circuit depending upon which of single-phase and multi-phase operation of the UPS is indicated. | 02-24-2011 |
20120313438 | UNINTERRUPTIBLE POWER SUPPLY - An uninterruptible power supply (UPS) system includes an AC power input configured to receive AC power from a single-phase AC power source or a multi-phase AC power source, a DC power source, an output circuit including a power output, a controllable switch configured to selectively couple at least one of the AC power input and the DC power source to the output circuit, and a processor coupled and configured to affect operation of the output circuit depending upon which of single-phase and multi-phase operation of the UPS is indicated. | 12-13-2012 |
Patent application number | Description | Published |
20110156005 | Germanium-based quantum well devices - A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel. A group III-V barrier layer adds strain to the channel. Graded silicon germanium layers above and below the channel region improve performance. Multiple gate dielectric materials allow use of a high-k value gate dielectric. | 06-30-2011 |
20120074464 | Non-planar device having uniaxially strained semiconductor body and method of making same - A method and a device made according to the method. The method comprises providing a substrate including a first material, and providing a fin including a second material, the fin being disposed on the substrate and having a device active portion, the first material and the second material presenting a lattice mismatch between respective crystalline structures thereof. Providing the fin includes providing a biaxially strained film including the second material on the substrate; and removing parts of the biaxially strained film to form a substantially uniaxially strained fin therefrom. | 03-29-2012 |
20120153387 | TRANSISTORS WITH HIGH CONCENTRATION OF BORON DOPED GERMANIUM - Techniques are disclosed for forming transistor devices having source and drain regions with high concentrations of boron doped germanium. In some embodiments, an in situ boron doped germanium, or alternatively, boron doped silicon germanium capped with a heavily boron doped germanium layer, are provided using selective epitaxial deposition in the source and drain regions and their corresponding tip regions. In some such cases, germanium concentration can be, for example, in excess of 50 atomic % and up to 100 atomic %, and the boron concentration can be, for instance, in excess of 1E20 cm | 06-21-2012 |
20120193609 | GERMANIUM-BASED QUANTUM WELL DEVICES - A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel. A group III-V barrier layer adds strain to the channel. Graded silicon germanium layers above and below the channel region improve performance. Multiple gate dielectric materials allow use of a high-k value gate dielectric. | 08-02-2012 |
20140027816 | HIGH MOBILITY STRAINED CHANNELS FOR FIN-BASED TRANSISTORS - Techniques are disclosed for incorporating high mobility strained channels into fin-based transistors (e.g., FinFETs such as double-gate, trigate, etc), wherein a stress material is cladded onto the channel area of the fin. In one example embodiment, silicon germanium (SiGe) is cladded onto silicon fins to provide a desired stress, although other fin and cladding materials can be used. The techniques are compatible with typical process flows, and the cladding deposition can occur at a plurality of locations within the process flow. In some cases, the built-in stress from the cladding layer may be enhanced with a source/drain stressor that compresses both the fin and cladding layers in the channel. In some cases, an optional capping layer can be provided to improve the gate dielectric/semiconductor interface. In one such embodiment, silicon is provided over a SiGe cladding layer to improve the gate dielectric/semiconductor interface. | 01-30-2014 |
20140061589 | GERMANIUM-BASED QUANTUM WELL DEVICES - A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel. A group III-V barrier layer adds strain to the channel. Graded silicon germanium layers above and below the channel region improve performance. Multiple gate dielectric materials allow use of a high-k value gate dielectric. | 03-06-2014 |
20140070273 | Non-Planar Device Having Uniaxially Strained Semiconductor Body and Method of Making Same - A method and a device made according to the method. The method comprises providing a substrate including a first material, and providing a fin including a second material, the fin being disposed on the substrate and having a device active portion, the first material and the second material presenting a lattice mismatch between respective crystalline structures thereof. Providing the fin includes providing a biaxially strained film including the second material on the substrate; and removing parts of the biaxially strained film to form a substantially uniaxially strained fin therefrom. | 03-13-2014 |
20140138744 | TUNNELING FIELD EFFECT TRANSISTORS (TFETS) FOR CMOS ARCHITECTURES AND APPROACHES TO FABRICATING N-TYPE AND P-TYPE TFETS - Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region disposed above a substrate. The homojunction active region includes a relaxed Ge or GeSn body having an undoped channel region therein. The homojunction active region also includes doped source and drain regions disposed in the relaxed Ge or GeSn body, on either side of the channel region. The TFET also includes a gate stack disposed on the channel region, between the source and drain regions. The gate stack includes a gate dielectric portion and gate electrode portion. | 05-22-2014 |
20140166981 | VERTICAL NANOWIRE TRANSISTOR WITH AXIALLY ENGINEERED SEMICONDUCTOR AND GATE METALLIZATION - Vertically oriented nanowire transistors including semiconductor layers or gate electrodes having compositions that vary over a length of the transistor. In embodiments, transistor channel regions are compositionally graded, or layered along a length of the channel to induce strain, and/or include a high mobility injection layer. In embodiments, a gate electrode stack including a plurality of gate electrode materials is deposited to modulate the gate electrode work function along the gate length. | 06-19-2014 |
20150041847 | TUNNELING FIELD EFFECT TRANSISTORS (TFETS) FOR CMOS ARCHITECTURES AND APPROACHES TO FABRICATING N-TYPE AND P-TYPE TFETS - Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region disposed above a substrate. The homojunction active region includes a relaxed Ge or GeSn body having an undoped channel region therein. The homojunction active region also includes doped source and drain regions disposed in the relaxed Ge or GeSn body, on either side of the channel region. The TFET also includes a gate stack disposed on the channel region, between the source and drain regions. The gate stack includes a gate dielectric portion and gate electrode portion. | 02-12-2015 |
20150060945 | TRANSISTORS WITH HIGH CONCENTRATION OF BORON DOPED GERMANIUM - Techniques are disclosed for forming transistor devices having source and drain regions with high concentrations of boron doped germanium. In some embodiments, an in situ boron doped germanium, or alternatively, boron doped silicon germanium capped with a heavily boron doped germanium layer, are provided using selective epitaxial deposition in the source and drain regions and their corresponding tip regions. In some such cases, germanium concentration can be, for example, in excess of 50 atomic % and up to 100 atomic %, and the boron concentration can be, for instance, in excess of 1E20 cm | 03-05-2015 |
20150072490 | VERTICAL NANOWIRE TRANSISTOR WITH AXIALLY ENGINEERED SEMICONDUCTOR AND GATE METALLIZATION - Vertically oriented nanowire transistors including semiconductor layers or gate electrodes having compositions that vary over a length of the transistor. In embodiments, transistor channel regions are compositionally graded, or layered along a length of the channel to induce strain, and/or include a high mobility injection layer. In embodiments, a gate electrode stack including a plurality of gate electrode materials is deposited to modulate the gate electrode work function along the gate length. | 03-12-2015 |