Patent application number | Description | Published |
20100043974 | PLASMA PROCESSING METHOD AND APPARATUS - A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate. | 02-25-2010 |
20100126668 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching. | 05-27-2010 |
20110214813 | PLASMA PROCESSING METHOD AND APPARATUS - A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate. | 09-08-2011 |
20110214815 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching. | 09-08-2011 |
20110259524 | CAPACITIVE COUPLING PLASMA PROCESSING APPARATUS AND METHOD FOR USING THE SAME - A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode. | 10-27-2011 |
20110272097 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring. | 11-10-2011 |
20110272100 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, FOCUS RING, AND FOCUS RING COMPONENT - When a substrate to be processed placed on a mounting table disposed in a process chamber is processed by plasma generated in the process chamber by application of high-frequency voltage, an electric field causing ions generated by the plasma to accelerate toward a lower surface of a peripheral edge portion of the substrate to be processed placed on the mounting table is formed under the peripheral edge portion of the substrate to be processed, and the ions consequently collide with the lower surface of the peripheral edge portion, which reduces the occurrence of deposition. | 11-10-2011 |
20120145324 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching. | 06-14-2012 |
20130284371 | CAPACITIVE COUPLING PLASMA PROCESSING APPARATUS AND METHOD FOR USING THE SAME - A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode. | 10-31-2013 |
20140124139 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part. | 05-08-2014 |
20140326409 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching. | 11-06-2014 |
Patent application number | Description | Published |
20140357835 | POLYMERIZABLE COMPOSITION FOR OPTICAL MATERIAL, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING OPTICAL MATERIAL - By using a method for producing a composition for an optical material using (a) sulfur, (b) a compound having two intramolecular episulfide groups, (c) a compound having one or more (preferably two) SH groups, and (d) an amine compound having a specific structure, in which compound (a) and compound (c) are pre-polymerized in the presence of compound (b) using compound (d) as the pre-polymerization catalyst, the present invention provides a polymerizable composition for an optical material in which the viscosity elevation speed during pre-polymerization is slow and the reaction temperature is approximately room temperature, and that has a low viscosity and shows little increase in viscosity. By means of another embodiment of the present invention, it is possible to produce an optical material that has excellent mold release characteristics but has substantially no striae by polymerizing (a) sulfur, (b) a compound having two intramolecular episulfide groups, and (c) a compound having one or more SH groups in the presence of (d) a hindered amine catalyst having a specific structure. | 12-04-2014 |
20140378628 | METHOD FOR PRODUCING COMPOSITION FOR OPTICAL MATERIAL - According to the present invention, a composition for optical material, which is capable of providing a homogeneous optical material, can be prepared through pre-polymerization reaction between (a) an inorganic compound having a sulfur atom and (b) an episulfide compound using a hindered amine as a catalyst, followed by mixing with (c) a polythiol compound and (d) a polyisocyanate compound. Moreover, this composition for optical material can be polymerized and cured to thereby provide an optical material having high refractive index (ne of 1.73 or higher), high strength (an elongation of 13% or more in three-point bend test and good drilling resistance), and high heat resistance (a softening point of 70° C. or higher, as measured by TMA). | 12-25-2014 |
Patent application number | Description | Published |
20130314506 | Camera Device - An example device includes first and second cameras and a touchscreen user interface configured to concurrently display first and second buttons and a real time image captured by the selected one of the cameras. The first button is operable for selecting between the first and second cameras, and the second button is operable for taking a picture using the selected one of the cameras. | 11-28-2013 |
20130314577 | Camera Device - An example device includes first and second oppositely facing cameras and a user interface configured to concurrently display (i) a real time image captured by one of the first and second cameras and (ii) first, second and third buttons. The first button is operable for taking a picture using one of the cameras, the second button is operable for displaying a stored picture, and the third button is operable for switching between the first and second cameras. | 11-28-2013 |
20140362254 | INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING SYSTEM, AND LAUNCH PROGRAM AND STORAGE MEDIUM STORING THE SAME - A game device according to the present embodiment includes a camera as image pick-up means. An inner camera is accommodated in an upper housing. In addition, a microphone hole is provided in an inner surface of the upper housing so as to sense external sound through a microphone. | 12-11-2014 |
20150333549 | CHARGING SYSTEM AND CHARGING STAND - A non-limiting example charging stand comprises a main body that includes an outer side member and the inner side member. The inner side member has an inserting portion for inserting a portable game apparatus. The inserting portion is set with a depth that hides a portion of a hinge but does not hide a cover constituting a part of a housing of the portable game apparatus when inserting the folded portable game apparatus in a vertical orientation. Accordingly, when viewing the portable game apparatus inserted in the charging stand from the front, it is possible to see a color, a pattern or an image of character that is applied to the cover. At this time, a color, a pattern or an image of character that is applied to an outer circumference surface (front) of the charging stand can be also seen. | 11-19-2015 |
Patent application number | Description | Published |
20080254701 | METHOD OF MANUFACTURING SUBSTRATE, SUBSTRATE MANUFACTURING SYSTEM, AND METHOD OF MANUFACTURING DISPLAY - A method of manufacturing a substrate formed with a plurality of wiring patterns on a base, includes: a first inspection step of identifying a faulty wiring pattern having electric short circuit or disconnection by performing an electric inspection respectively for the plurality of wiring patterns; a second inspection step of examining a relative position of a defect on the base and at least one of a type and a size of the defect by an optical inspection; a matching step of matching a result of the first inspection step with a result of the second inspection step, and identifying a critical defect having electric short circuit or disconnection; and a third inspection step of examining a relative position in a pixel and an effective range of the critical defect by an optical inspection. | 10-16-2008 |
20100201658 | METHOD OF MANUFACTURING DISPLAY DEVICE AND DISPLAY DEVICE - A method of manufacturing a display device is provided, in which interlayer short formed in a capacitor in a wiring board or in an intersection between wiring lines may be repaired, and a display device is provided. A method of manufacturing a display device comprising steps of: forming a wiring board having a lower conductive film, an insulating film and an upper conductive film in order on a substrate; repairing interlayer short being short between the upper conductive film and the lower conductive film; and forming display elements on the wiring board. Laser light having a pulse width of 10 picoseconds or less is irradiated to a short-included region including the interlayer short in the step of repairing the interlayer short in order to remove at least the upper conductive film between the lower conductive film, the insulating film and the upper conductive film within the short-included region. | 08-12-2010 |
20110205630 | Optical device and optical apparatus - An optical device includes: an optical device body; a first transparent electrode film deposited on a light incident side; a second transparent electrode film so formed that the first and second transparent electrode films face away from each other; and a first ferroelectric film deposited at least between the first and second transparent electrode films, wherein the first ferroelectric film vibrates in response to a drive voltage applied through the first and second transparent electrode films. | 08-25-2011 |
20130057960 | OPTICAL ELEMENT, METHOD OF FORMING OPTICAL ELEMENT, OPTICAL ELEMENT ARRAY, DISPLAY DEVICE, AND ELECTRONIC APPARATUS - There is provided an optical element including first and second substrates that are disposed to face each other; a pair of wall portions that are erected on an inner surface of the first substrate facing the second substrate to be adjacent to each other in a first direction and extend in a second direction different from the first direction; first and second electrodes that are disposed on wall surfaces of the pair of wall portions to be insulated from each other and face each other and are provided to be apart from the first substrate; an insulating film that covers the first and second electrodes; a third electrode that is provided on an inner surface of the second substrate facing the first substrate; and a polar liquid and a non-polar liquid that are sealed between the first substrate and the second substrate and have different refractive indexes. | 03-07-2013 |