| Patent application number | Description | Published |
|---|
| 20090065849 | Semiconductor device and method for manufacturing the same - To improve a charge retention characteristic of a nonvolatile memory transistor. A first insulating film, a charge trapping film, and a second insulating film are formed between a semiconductor substrate and a conductive film. The charge trapping film is formed of a silicon nitride film including an upper region having a low concentration of hydrogen and a lower region having a high concentration of hydrogen. Such a silicon nitride film is formed in such a manner that a silicon nitride film including 15 atomic % or more hydrogen is formed by a chemical vapor deposition method and an upper portion of the silicon nitride film is nitrided. The nitridation treatment is performed by nitriding the silicon nitride film by nitrogen radicals produced in plasma of a nitrogen gas. | 03-12-2009 |
| 20100184269 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE - To provide a method for manufacturing a semiconductor substrate provided with a single crystal semiconductor layer which can be used practically even when a substrate with a low upper temperature limit, such as a glass substrate, is used. An oxide film is formed on a single crystal semiconductor substrate; accelerated ions are introduced into the single crystal semiconductor substrate through the oxide film to form an embrittled region in the single crystal semiconductor substrate; a supporting substrate is bonded such that the supporting substrate and the single crystal semiconductor substrate face each other with the oxide film interposed therebetween; separation is performed at the embrittled region into the supporting substrate to which a single crystal semiconductor layer is bonded and part of the single crystal semiconductor substrate by heating of the single crystal semiconductor substrate; first etching is performed on a surface of the single crystal semiconductor layer bonded to the supporting substrate with a substrate bias applied; the single crystal semiconductor layer is irradiated with a laser beam and at least part of the surface of the single crystal semiconductor layer is melted and solidified; and second etching is performed on the surface of the single crystal semiconductor layer with no substrate bias applied. | 07-22-2010 |
| 20100248444 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A single crystal semiconductor separated from a single crystal semiconductor substrate is formed partly over a supporting substrate with a buffer layer provided therebetween. The single crystal semiconductor is separated from the single crystal semiconductor substrate by irradiation with accelerated ions, formation of a fragile layer by the ion irradiation, and heat treatment. A non-single crystal semiconductor layer is formed over the single crystal semiconductor and irradiated with a laser beam to be crystallized, whereby an SOI substrate is manufactured. | 09-30-2010 |
| 20110008931 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced. | 01-13-2011 |
| 20110024750 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced. | 02-03-2011 |
| 20110049518 | SEMICONDUCTOR DEVICE INCLUDING A TRANSISTOR, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - An object is to prevent contamination of a semiconductor film in a transistor or a semiconductor device including the transistor. Another object is to suppress variation in electrical characteristics and deterioration. A transistor including: a gate electrode layer provided over a substrate; a gate insulating film provided over the gate electrode layer; a semiconductor layer which is provided over the gate insulating film and which overlaps the gate electrode layer; a carbide layer provided over and in contact with a surface of the semiconductor layer; and a source electrode layer and a drain electrode layer which are electrically connected to the semiconductor layer is provided. | 03-03-2011 |
| 20110049588 | Semiconductor Device and Manufacturing Method Thereof - An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion element with excellent characteristics. An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion device with excellent characteristic through a simple process. A semiconductor device is provided, which includes a light-transmitting substrate; an insulating layer over the light-transmitting substrate; and a photoelectric conversion element over the insulating layer. The photoelectric conversion element includes a single crystal semiconductor layer including a semiconductor region having an effect of photoelectric conversion, a semiconductor region having a first conductivity type, and a semiconductor region having a second conductivity type; a first electrode electrically connected to the semiconductor region having the first conductivity type; and a second electrode electrically connected to the semiconductor region having the second conductivity type. | 03-03-2011 |
| 20110057188 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor. | 03-10-2011 |
| 20110079788 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A charge retention characteristic of a nonvolatile memory transistor is improved. A first insulating film that functions as a tunnel insulating film, a charge storage layer, and a second insulating film are sandwiched between a semiconductor substrate and a conductive film. The charge storage layer is formed of two silicon nitride films. A silicon nitride film which is a lower layer is formed using NH | 04-07-2011 |
| 20110084271 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Disclosed is a highly reliable semiconductor device and a manufacturing method thereof, which is achieved by using a transistor with favorable electrical characteristics and high reliability as a switching element. The semiconductor device includes a driver circuit portion and a pixel portion over one substrate, and the pixel portion comprises a light-transmitting bottom-gate transistor. The light-transmitting bottom-gate transistor comprises: a transparent gate electrode layer; an oxide semiconductor layer over the gate electrode layer, a superficial layer of the oxide semiconductor layer including comprising a microcrystal group of nanocrystals; and source and drain electrode layers formed over the oxide semiconductor layer, the source and drain electrode layers comprising a light-transmitting oxide conductive layer. | 04-14-2011 |
| 20110089414 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized. | 04-21-2011 |
| 20110089419 | SEMICONDUCTOR DEVICE - An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate. | 04-21-2011 |
| 20110089927 | VOLTAGE REGULATOR CIRCUIT - A transistor includes a gate, a source, and a drain, the gate is electrically connected to the source or the drain, a first signal is input to one of the source and the drain, and an oxide semiconductor layer whose carrier concentration is 5×10 | 04-21-2011 |
| 20110089975 | LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE - A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×10 | 04-21-2011 |
| 20110090183 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE LIQUID CRYSTAL DISPLAY DEVICE - In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1×10 | 04-21-2011 |
| 20110090184 | LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE - To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10 | 04-21-2011 |
| 20110090204 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC APPARATUS HAVING THE SAME - A liquid crystal display device includes: a driver circuit portion; a pixel portion; a signal generation circuit for generating a control signal for driving the driver circuit portion and an image signal which is supplied to the pixel portion; a memory circuit; a comparison circuit for detecting a difference of image signals for a series of frame periods among image signals stored for respective frame periods in the memory circuit; a selection circuit which selects and outputs the image signals for the series of frame periods when the difference is detected in the comparison circuit; and a display control circuit which supplies the control signal and the image signals output from the selection circuit, to the driver circuit portion when the difference is detected in the comparison circuit, and stops supplying the control signal to the driver circuit portion when the difference is not detected in the comparison circuit. | 04-21-2011 |
| 20110101331 | SEMICONDUCTOR DEVICE - An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized. | 05-05-2011 |
| 20110101333 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device with reduced standby power. A transistor including an oxide semiconductor as an active layer is used as a switching element, and supply of a power supply voltage to a circuit in an integrated circuit is controlled by the switching element. Specifically, when the circuit is in an operation state, supply of the power supply voltage to the circuit is performed by the switching element, and when the circuit is in a stop state, supply of the power supply voltage to the circuit is stopped by the switching element. In addition, the circuit supplied with the power supply voltage includes a semiconductor element which is a minimum unit included in an integrated circuit formed using a semiconductor. Further, the semiconductor included in the semiconductor element contains silicon having crystallinity (crystalline silicon). | 05-05-2011 |
| 20110101942 | VOLTAGE REGULATOR CIRCUIT - A voltage regulator circuit includes a transistor and a capacitor. The transistor includes a gate, a source, and a drain, a first signal is inputted to one of the source and the drain, a second signal which is a clock signal is inputted to the gate, an oxide semiconductor layer is used for a channel formation layer, and an off-state current is less than or equal to 10 aA/μm. The capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a high power source voltage and a low power source voltage are alternately applied to the second electrode. | 05-05-2011 |
| 20110124164 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE - An amorphous semiconductor layer is formed over a first single crystal semiconductor layer provided over a glass substrate or a plastic substrate with an insulating layer therebetween. The amorphous semiconductor layer is formed by a CVD method at a deposition temperature of higher than or equal to 100° C. and lower than or equal to 275° C. with use of a silane-based gas not diluted. Heat treatment is performed so that the amorphous semiconductor layer solid-phase epitaxially grows. In such a manner, an SOI substrate including a thick single crystal semiconductor layer is manufactured. | 05-26-2011 |
