Korthuis
Barry Korthuis, Issaquah, WA US
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20120103983 | Pressure Relief Valve - A degassing valve in a flexible container is disclosed. The valve includes a generally flat valve seat on a truncated generally dome shaped structure, and the valve seat is raised a height above the valve chamber base surface. A resilient, non-perforated, non-spring-biased diaphragm is inter-engaged upon the valve seat and overlaps the valve seat outer periphery. The valve seat engages a central area of the diaphragm that is not proximate the perimeter of the diaphragm, and the dome shaped structure has a sectional radius greater than the diaphragm radius. A well is recessed into the valve seat in a direction away from the diaphragm by a depth less than the height of the valve seat above the valve chamber base surface. | 05-03-2012 |
Matthew Korthuis, Bellingham, WA US
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20150208581 | AGITATED HARVESTER CONVEYOR - A conveyor system for a harvester is provided where the conveyor system includes a conveyor with openings and an agitator that is configured to impart an agitating motion to the conveyor to aid in the separation of materials. | 07-30-2015 |
Shane Korthuis, Denver, CO US
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20140231563 | KITCHEN SHREDDER - An apparatus for pre-composting organic material, comprising: a housing with two openings and a pre-composting means between the two openings wherein kitchen scraps may be fed in the first opening and the pre-composted scraps exit the second opening. In an embodiment of the present invention the pre-composter includes: a lid assembly which may facilitate feeding scraps into the pre-composter; a hopper and blade assembly for pre-composting or cutting and shredding the scraps; a component tray for securing the housing to the hopper; a bin for collecting the pre-composted scraps; and a crank assembly which delivers rotational power to the blade assembly. | 08-21-2014 |
Vincent Korthuis, Corvallis, OR US
Patent application number | Description | Published |
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20120012840 | Thin-film Transistor (TFT) With A Bi-layer Channel - In at least some embodiments, a thin-film transistor (TFT) includes a gate electrode and a gate dielectric covering the gate dielectric. The TFT also includes a source electrode and a drain electrode adjacent the gate dielectric. The TFT also includes a bi-layer channel between the source electrode and the drain electrode, the bi-layer channel having a zinc indium oxide (ZIO) layer positioned adjacent the gate dielectric and a zinc tin oxide (ZTO) layer that covers the ZIO layer. | 01-19-2012 |