Konudula
Babu Rao Konudula, Secunderabad IN
Patent application number | Description | Published |
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20080234495 | Process for the Preparation of Almotriptan - The present invention encompasses a method for the preparation of Almotriptan and its pharmaceutically acceptable salts comprises, i) Methylation of 3-[5-(1-Pyrrolidinyl sulfonyl methyl) 1H-indol-yl]ethane amine ii) Treating crude Almotriptan with a hydroxy benzoic acid yields hydroxy benzoic acid addition salt of Almotriptan iii) Converting Almotriptan hydroxy benzoic acid addition salt to Almotriptan and iv) Salification of Almotriptan to its pharmaceutically acceptable salts | 09-25-2008 |
Babu Rao Konudula, Jinnaram Mandal IN
Patent application number | Description | Published |
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20110144383 | PROCESS FOR PREPARING (S)-3-(AMINOMETHYL)-5-METHYLHEXANOIC ACID - Disclosed herein is a process for the preparing (S)-3-(aminomethyl)-5-methylhexanoic acid by optical resolution of (±)-3-(aminomethyl)-5-methylhexanoic acid and a resolving agent employing a suitable solvent. | 06-16-2011 |
Venkateswara Reddy Konudula, Banagalore IN
Patent application number | Description | Published |
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20130016573 | MEMORY DEVICE WITH TRIMMABLE POWER GATING CAPABILITIESAANM Goel; AnkurAACI KarnalAACO INAAGP Goel; Ankur Karnal INAANM Konudula; Venkateswara ReddyAACI BanagaloreAACO INAAGP Konudula; Venkateswara Reddy Banagalore INAANM Gowda; Sathisha NanjundeAACI HassanAACO INAAGP Gowda; Sathisha Nanjunde Hassan IN - A memory device includes at least one memory cell including a storage element electrically connected with a source potential line. A drive strength of the storage element is controlled as a function of a voltage level on the source potential line. The memory device further includes a clamp circuit electrically connected between the source potential line and a voltage source. The clamp circuit is operative to regulate the voltage level on the source potential line relative to the voltage source. A control circuit of the memory device is connected with the source potential line. The control circuit is operative to adjust the voltage level on the source potential line as a function of an operational mode of the memory device. A coarseness by which the voltage level on the source potential line is adjusted is selectively controlled as a function of at least a first control signal. | 01-17-2013 |