| Patent application number | Description | Published |
|---|
| 20080237804 | QUALITY OF A THIN LAYER THROUGH HIGH-TEMPERATURE THERMAL ANNEALING - A method for forming a structure is provided and includes implanting an atomic species into a donor substrate having an upper surface at a given depth relative to the upper surface to form an embrittlement zone in the donor substrate, the embrittlement zone defining a removable layer within the donor substrate. The method further includes assembling the upper surface of the donor substrate to a receiver substrate. Additionally, the method includes detaching the removable layer from the donor substrate at the embrittlement zone, thereby forming a detachment surface on the removable layer, by high temperature annealing. The high temperature annealing includes a temperature upgrade phase to a predetermined maximum temperature, maintaining the maximum temperature for a predetermined exposure duration, and a temperature downgrade phase. The maximum temperature and the exposure duration are selected so as to prevent the appearance of significant defects at the detachment surface. | 10-02-2008 |
| 20080303061 | Substrate Production Method and Substrate - A process for the manufacture of a substrate having a top layer of a first material and an underlying layer of a second material whose lattice parameter is different from that of the first material. The process includes the steps of conducting an amorphization of the top layer to create an amorphous region in the top layer lying between an exposed surface and an amorphization interface, with that portion of the top layer below the interface being shielded from the amorphization and remaining as a crystalline structure; recrystallizing the amorphous region while also creating a network of defects at the interface, wherein the network forms a boundary for dislocations from the crystalline structure of the top layer, and containing the dislocations in the portion of the top layer that is located below the interface. Also, the substrates obtained by the method. | 12-11-2008 |
| 20090014720 | METHOD OF TREATING INTERFACE DEFECTS IN A SUBSTRATE - The present invention relates to a method of treating a structure produced from semiconductor materials, wherein the structure includes a first and second substrates defining a common interface that has defects. The method includes forming a layer, called the disorganized layer, which includes the interface, in which at least a part of the crystal lattice is disorganized; and reorganizing the crystal lattice of the disorganized layer in order to force the defects back deeper into the first substrate. | 01-15-2009 |
| 20100264458 | METHOD FOR MANUFACTURING HETEROSTRUCTURES - A method for manufacturing heterostructures for applications in the fields of electronics, optics or opto-electronics. This method includes providing a silicon oxide layer with a thickness of less than or equal to 25 nanometers on one of a donor substrate or a receiver substrate or on both substrates, heat treating the substrate(s) that contains the silicon oxide layer at 900° C. to 1,200° C. under a neutral or reducing atmosphere that contains at least one of argon or hydrogen to form layer trapping through-holes inside the silicon oxide, bonding the substrates together at a bonding interface with the silicon oxide layer(s) positioned between them, reinforcing the bonding by annealing the substrates at 25° C. to 500° C. such that the trapping holes retaining gas species at the bonding interface, and transferring an active layer as a portion of the donor substrate onto the receiver substrate to obtain the heterostructure. | 10-21-2010 |
| 20100289113 | FABRICATION PROCESS OF A HYBRID SEMICONDUCTOR SUBSTRATE - The present invention relates to a method for manufacturing a hybrid semiconductor substrate comprising the steps of (a) providing a hybrid semiconductor substrate comprising a semiconductor-on-insulator (SeOI) region, that comprises an insulating layer over a base substrate and a SeOI layer over the insulating layer, and a bulk semiconductor region, wherein the SeOI region and the bulk semiconductor region share the same base substrate; (b) providing a mask layer over the SeOI region; and (c) forming a first impurity level by doping the SeOI region and the bulk semiconductor region simultaneously such that the first impurity level in the SeOI region is contained within the mask. Thereby avoiding higher number of process steps involved in the manufacturing process of hybrid semiconductor substrate. | 11-18-2010 |
| 20110165758 | METHOD FOR MAKING A STRUCTURE COMPRISING A STEP FOR IMPLANTING IONS IN ORDER TO STABILIZE THE ADHESIVE BONDING INTERFACE - The invention relates to a method for making a structure for use ion applications in the fields of electronics, optics or optoelectronics. The structure includes a thin layer of semiconducting material on a supporting substrate. The method includes bonding the thin layer onto the supporting substrate by molecular adhesion at a bonding interface to obtain a structure; implanting ions at the bonding interface to transfer atoms from the thin layer to transfer atoms between the thin layer and the supporting substrate or vice versa; and heat-treating the structure in order to stabilize the bonding interface. | 07-07-2011 |
| 20110241157 | METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE - The invention relates to a method for manufacturing a semiconductor substrate, in particular a semiconductor-on-insulator substrate by providing a donor substrate and a handle substrate, forming a pattern of one or more doped regions typically inside the handle substrate, and then attaching such as by molecular bonding the donor and the handle substrate to obtain a donor-handle compound. | 10-06-2011 |
| 20110287571 | METHOD OF FABRICATING A BACK-ILLUMINATED IMAGE SENSOR - A method of fabricating a back-illuminated image sensor that includes the steps of providing a first substrate of a semiconductor layer, in particular a silicon layer, forming electronic device structures over the semiconductor layer and, only then, doping the semiconductor layer. By doing so, improved dopant profiles and electrical properties of photodiodes can be achieved such that the final product, namely an image sensor, has a better quality. | 11-24-2011 |
