| Patent application number | Description | Published |
|---|
| 20080211302 | Assist device - The present invention provides a higher-performance assist device which is safer by using a wireless charging technique. The assist device includes a detecting portion and an assist device driving portion. The detecting portion includes a sensor, a first transmitting/receiving circuit, a first data processing circuit, a first charging circuit, and a first battery. The assist device driving portion includes a driving portion, a second data processing circuit, a second transmitting/receiving circuit, a second charging circuit, and a second battery. Electromagnetic waves are transmitted from the second transmitting/receiving circuit provided in the assist device driving portion, and the first transmitting/receiving circuit provided in the detecting portion receives the electromagnetic waves. Induced electromotive force generated at this time is input to the first charging circuit through the first data processing circuit provided in the detecting portion, and the first battery provided in the detecting portion is charged. | 09-04-2008 |
| 20080238663 | INDIVIDUAL MANAGEMENT SYSTEM - To provide an individual management system for managing products with the use of an automatic identification technology using a wireless communication device. In the individual management system, an individual management device is attached to a managed object, an individual identification device can wirelessly communicate with the individual management device, and an individual information management device can communicate with the individual identification device. The individual management device includes a detection portion such as a sensor. The individual identification device includes a position analysis portion which calculates a distance between the individual management device and the individual identification device. Information on the distance between the individual management device and the individual identification device, and information from the detection portion included in the individual management device are transmitted to the individual identification device. Accordingly, a system user can specify a position of the individual management device accurately. | 10-02-2008 |
| 20090127081 | MEMS SWITCH - An object is that contact between an upper switch electrode and a lower switch electrode is not hindered. The present invention relates to a MEMS switch including a substrate; a structural layer with a beam structure in which at least one end is fixed to the substrate; a lower drive electrode layer and a lower switch electrode layer which are provided below the structural layer and on a surface of the substrate; and an upper drive electrode layer and an upper switch electrode layer which are provided on a surface of the structural layer, which is opposite to the substrate, so as to face the lower drive electrode layer and the lower switch electrode layer, respectively, in which the upper switch electrode layer is larger than the lower switch electrode layer. | 05-21-2009 |
| 20090145629 | Micromachine and Method for Manufacturing the Same - A structure which prevents thinning and disconnection of a wiring is provided, in a micromachine (MEMS structure body) formed with a surface micromachining technology. A wiring (upper auxiliary wiring) over a sacrificial layer is electrically connected to a different wiring (upper connection wiring) over the sacrificial layer, so that thinning, disconnection, and the like of the wiring formed over the sacrificial layer at a step portion generated due to the thickness of the sacrificial layer can be prevented. The wiring over the sacrificial layer is formed of the same conductive film as an upper driving electrode which is a movable electrode and is thus thin. However, the different wiring is formed over a structural layer, which is formed by a CVD method and has a rounded step, and has a thickness of 200 nm to 1 μm, whereby thinning, disconnection, and the like of the wiring can be further prevented. | 06-11-2009 |
| 20090230815 | MICRO ELECTRO MECHANICAL SYSTEM, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF - The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved. | 09-17-2009 |
| 20090242896 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A microstructure and a semiconductor element which are included in a micromachine have been generally formed in different steps. It is an object to provide a method for manufacturing a micromachine in which a microstructure and a semiconductor element are formed over one insulating substrate. A feature of the invention is a micromachine including a movable layer containing polycrystalline silicon which is thermally crystallized or crystallized by a laser using metal and a space below or above the layer. Such polycrystalline silicon has high strength and is formed on an insulating surface, so that it is used as a microstructure and used for forming a semiconductor element. Accordingly, a semiconductor device in which a microstructure and a semiconductor element are formed over one insulating substrate can be formed. | 10-01-2009 |
| 20100087048 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It has been difficult to manufacture a semiconductor device equipped with a microstructure having a space, an electric circuit for controlling the microstructure, and the like over one substrate. | 04-08-2010 |
| 20100133537 | MICRO ELECTRO MECHANICAL DEVICE AND MANUFACTURING METHOD THEREOF - To manufacture a micro structure and an electric circuit included in a micro electro mechanical device over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface. The micro structure includes a structural layer having the same stacked-layer structure as a layered product of a gate insulating layer of the transistor and a semiconductor layer provided over the gate insulating layer. That is, the structural layer includes a layer formed of the same insulating film as the gate insulating layer and a layer formed of the same semiconductor film as the semiconductor layer of the transistor. Further, the micro structure is manufactured by using each of conductive layers used for a gate electrode, a source electrode, and a drain electrode of the transistor as a sacrificial layer. | 06-03-2010 |
| 20100182282 | TOUCH PANEL AND ELECTRONIC DEVICE - To provide a touch panel with reduced disturbance of display and with improved mechanical strength by suppressing variation in the space between a pair of substrates which form the touch panel even when in contact with an object to be detected. A pixel portion including a plurality of pixels is provided between a pair of substrates. Each pixel includes a photosensor portion which detects that the object to be detected is in contact with one of the pair of substrates, and a MEMS portion which generates a mechanical displacement in a direction perpendicular to the pair of substrates when a signal based on a detection result of the photosensor portion is input. | 07-22-2010 |
| 20100209784 | Power Storage Device - An embodiment of the present invention relates to a power storage device which includes a positive electrode having a positive-electrode current collector with a plurality of first projections, a first insulator provided over each of the plurality of first projections, and a positive-electrode active material provided on a surface of the first insulator and the positive-electrode current collector with the plurality of first projections; a negative electrode having a negative-electrode current collector with a plurality of second projections, a second insulator provided over each of the plurality of second projections, and a negative-electrode active material provided on a surface of the second insulator and the negative-electrode current collector with the plurality of second projections; a separator provided between the positive electrode and the negative electrode; and an electrolyte provided in a space between the positive electrode and the negative electrode and containing carrier ions. | 08-19-2010 |
| 20100227228 | Power Storage Device - The present invention relates to a power storage device including: a positive electrode having a positive-electrode current collector, a positive-electrode active material with a plurality of first projections on the positive-electrode current collector, and a first insulator on an end of each of the plurality of first projections; a negative electrode having a negative-electrode current collector, a negative-electrode active material with a plurality of second projections on a surface of the negative-electrode current collector, and a second insulator on an end of each of the plurality of second projections; a separator between the positive electrode and the negative electrode; and an electrolyte provided in a space between the positive electrode and the negative electrode and containing carrier ions. In each of the first projections and the second projections, a ratio of the height to the width is 3 or more and 1000 or less to 1, i.e. (3 to 1000):1. | 09-09-2010 |
| 20100239907 | Power Storage Device and Manufacturing Method Thereof - A power storage device having a small thickness is manufactured. A manufacturing method of the power storage device includes: forming a first layer and a second layer over a first substrate; forming a first insulating layer, a positive electrode and a negative electrode over the second layer; forming a solid electrolyte layer over the first insulating layer, the positive electrode, and the negative electrode; forming a sealing layer to cover the solid electrolyte layer; forming a planarization film and a support over the sealing layer; separating the first layer and the second layer from each other so that the second layer, the positive electrode, the negative electrode, the solid electrolyte layer, the sealing layer, the planarization film, and the support are separated from the first substrate; attaching the separated structure to a second substrate which is flexible; and separating the support from the planarization film. | 09-23-2010 |
| 20100244250 | SEMICONDUCTOR INTEGRATED CIRCUIT, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE USING SEMICONDUCTOR INTEGRATED CIRCUIT - A step of forming a through hole in a semiconductor substrate, or a step of polishing the semiconductor substrate from its back surface requires a very long time and causes decrease of productivity. In addition, when semiconductor substrates are stacked, a semiconductor integrated circuit which is formed of the stack is thick and has poor mechanical flexibility. A release layer is formed over each of a plurality of substrates, layers each having a semiconductor element and an opening for forming a through wiring are formed over each of the release layers. Then, layers each having the semiconductor element are peeled off from the substrates, and then overlapped and stacked, a conductive layer is formed in the opening, and the through wiring is formed; thus, a semiconductor integrated circuit is formed. | 09-30-2010 |
| 20100273319 | Method for Manufacturing Semiconductor Device - A method for manufacturing a semiconductor device includes: forming a first and second layers not firmly adhering to each other over a substrate; forming a first semiconductor element layer and a first insulating layer over the second layer; forming a hole reaching the first layer in the first insulating layer; oxidizing the first layer exposed at a bottom of the hole; forming a wiring electrically connected to the first semiconductor element layer over the first insulating layer and in the hole; and separating the first layer and the substrate from the second layer and the first semiconductor element layer and expose the wiring. Further, another method includes providing an anisotropic conductive adhesive between a second semiconductor element layer separated through a manufacturing process similar to the above and the wiring, whereby the first and second semiconductor element layers are electrically connected through the anisotropic conductive adhesive and the wiring. | 10-28-2010 |
| 20100285627 | MICRO-ELECTRO-MECHANICAL DEVICE AND MANUFACTURING METHOD FOR THE SAME - It is an object of the present invention to provide a micro-electro-mechanical-device having a microstructure and a semiconductor element over one surface. In particular, it is an object of the present invention to provide a method for simplifying the process of forming the microstructure and the semiconductor element over one surface. A space in which the microstructure is moved, that is, a movable space for the microstructure is formed by procecssing an insulating layer which is formed in a process of forming the semiconductor element. The movable space can be formed by forming the insulating layer having a plurality of openings and making the openings face each other to be overlapped each other. | 11-11-2010 |
| 20110006784 | TEST METHOD OF MICROSTRUCTURE BODY AND MICROMACHINE - It is an object to provide a test method of a process, an electric characteristic, and a mechanical characteristic of a structure body in a micromachine without contact. A structure body including a first conductive layer, a second conductive layer provided in parallel to the first conductive layer, and a sacrifice layer or a space provided between the first conductive layer and the second conductive layer is provided; an antenna connected to the structure body is provided; electric power is supplied to the structure body wirelessly through the antenna; and an electromagnetic wave generated from the antenna is detected as a characteristic of the structure body. | 01-13-2011 |
| 20110089955 | Element Substrate, Inspecting Method, and Manufacturing Method of Semiconductor Device - A substrate including a semiconductor layer, where characteristics of an element can be evaluated with high reliability, and an evaluating method thereof are provided. A substrate including a semiconductor layer of the invention has a closed-loop circuit in which an antenna coil and a semiconductor element are connected in series, and a surface of an area over which the circuit is formed is covered with an insulating film. By using such a circuit, a contactless inspection can be carried out. Further, a ring oscillator can be substituted for the closed-loop circuit. | 04-21-2011 |
| 20110139880 | WIRELESS CHIP - The invention provides a wireless chip which can secure the safety of consumers while being small in size, favorable in communication property, and inexpensive, and the invention also provides an application thereof. Further, the invention provides a wireless chip which can be recycled after being used for managing the manufacture, circulation, and retail. A wireless chip includes a layer including a semiconductor element, and an antenna. The antenna includes a first conductive layer, a second conductive layer, and a dielectric layer sandwiched between the first conductive layer and the second conductive layer, and has a spherical shape, an ovoid shape, an oval spherical shape like a go stone, an oval spherical shape like a rugby ball, or a disc shape, or has a cylindrical shape or a polygonal prism shape in which an outer edge portion thereof has a curved surface. | 06-16-2011 |
