| Patent application number | Description | Published |
|---|
| 20090062934 | Recipe Generation System and Method - There is provided a recipe generation apparatus and method for reducing the time required to reflect an optimal value and changed value in an input file by automatically reflecting a value obtained by optimizing an input file for recipe generation in the input file for recipe generation. This invention eliminates the inconvenience of manually reflecting changes in an input file for recipe generation by automatically reflecting changed values in the input file for recipe generation after editing a provisionally generated off-line recipe and achieves a reduction in processing time. This invention also provides a method for automatically generating an off-line recipe and a file for recipe generation from a recipe of a scanning electron microscope (see FIG. | 03-05-2009 |
| 20090200465 | PATTERN MEASURING METHOD AND PATTERN MEASURING DEVICE - A pattern measuring method and device are provided which set a reference position for a measuring point to be measured by a scanning electron microscope and the like, based on position information of a reference pattern on an image acquired from the scanning electron microscope and based on a positional relation, detected by using design data, between the measuring point and the reference pattern formed at a position isolated from the measuring point. | 08-13-2009 |
| 20110139982 | METHOD FOR MEASURING SAMPLE AND MEASUREMENT DEVICE - An object of the present invention is to provide a method that can properly carry out the evaluation of a displacement and an overlapping area between first and second patterns formed through double patterning and a device therefor. | 06-16-2011 |
| 20110150345 | PATTERN MATCHING METHOD AND COMPUTER PROGRAM FOR EXECUTING PATTERN MATCHING - A pattern matching method which is capable of selecting a suitable measurement object pattern, even on a sample containing a periodic structure, and a computer program for making a computer execute the pattern matching. In a pattern matching method which executes matching between the design data-based first image of an object sample, and a second image, whether or not a periodic structure is included in a region to execute the matching is determined, so as to select a pattern, based on distance between an original point which is set in said image, and the pattern configuring said periodic structure, in the case where the periodic structure is included in said region, and to select a pattern based on coincidence of the pattern in said image, in the case where the periodic structure is not included in said region, and a computer program product. | 06-23-2011 |
| Patent application number | Description | Published |
|---|
| 20080226177 | HIGH-ACCURACY PATTERN SHAPE EVALUATING METHOD AND APPARATUS - A quantity (or dispersion value) of a distribution of edge position due to random noise is expected to be reduced statistically to 1/N when N edge position data items are averaged. Using this property, the single page image is averaged in a vertical direction with various values of parameter S, and then the edge roughness index is calculated. The S-dependence of the edge roughness index is analyzed and a term of a dispersion value directly proportional to 1/S is determined as being due to noise. | 09-18-2008 |
| 20090020699 | MICROSTRUCTURED PATTERN INSPECTION METHOD - The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected. | 01-22-2009 |
| 20090232405 | METHOD AND APPARATUS FOR COMPUTING DEGREE OF MATCHING - A matching degree computing apparatus is provided for comparing an input image and an object template image and computing a matching degree between an input image and an object template image based on the compared result. The computing apparatus includes a transforming unit for transforming the input image so as to be matched to the template object region and a computing unit for computing a matching degree between the transformed input image and the template image. The transforming unit provides a shaping unit for shaping a non-background region to the form of the template object region in the object corresponding region of the input image and a processing unit for arranging the non-background region contacting with the template object corresponding region so that the non-background region has no substantial impact on the matching degree in the object non-corresponding region of the input image. | 09-17-2009 |
| 20100314541 | MICROSTRUCTURED PATTERN INSPECTION METHOD - The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected. | 12-16-2010 |
| 20110057101 | CHARGED PARTICLE BEAM SYSTEM - A charged particle beam system wherein the output of the secondary electron detector is detected while the retarding voltage is varied between the values for which the secondary electrons do not reach the sample and the values for which the secondary electrons reach the sample, and the surface potential of the sample is determined on the basis of the relationship between the retarding voltage and the detected output of the secondary electron detector. | 03-10-2011 |
