Patent application number | Description | Published |
20090062934 | Recipe Generation System and Method - There is provided a recipe generation apparatus and method for reducing the time required to reflect an optimal value and changed value in an input file by automatically reflecting a value obtained by optimizing an input file for recipe generation in the input file for recipe generation. This invention eliminates the inconvenience of manually reflecting changes in an input file for recipe generation by automatically reflecting changed values in the input file for recipe generation after editing a provisionally generated off-line recipe and achieves a reduction in processing time. This invention also provides a method for automatically generating an off-line recipe and a file for recipe generation from a recipe of a scanning electron microscope (see FIG. | 03-05-2009 |
20090200465 | PATTERN MEASURING METHOD AND PATTERN MEASURING DEVICE - A pattern measuring method and device are provided which set a reference position for a measuring point to be measured by a scanning electron microscope and the like, based on position information of a reference pattern on an image acquired from the scanning electron microscope and based on a positional relation, detected by using design data, between the measuring point and the reference pattern formed at a position isolated from the measuring point. | 08-13-2009 |
20110139982 | METHOD FOR MEASURING SAMPLE AND MEASUREMENT DEVICE - An object of the present invention is to provide a method that can properly carry out the evaluation of a displacement and an overlapping area between first and second patterns formed through double patterning and a device therefor. | 06-16-2011 |
20110150345 | PATTERN MATCHING METHOD AND COMPUTER PROGRAM FOR EXECUTING PATTERN MATCHING - A pattern matching method which is capable of selecting a suitable measurement object pattern, even on a sample containing a periodic structure, and a computer program for making a computer execute the pattern matching. In a pattern matching method which executes matching between the design data-based first image of an object sample, and a second image, whether or not a periodic structure is included in a region to execute the matching is determined, so as to select a pattern, based on distance between an original point which is set in said image, and the pattern configuring said periodic structure, in the case where the periodic structure is included in said region, and to select a pattern based on coincidence of the pattern in said image, in the case where the periodic structure is not included in said region, and a computer program product. | 06-23-2011 |
20120211653 | PATTERN MEASURING METHOD AND PATTERN MEASURING DEVICE - A pattern measuring method and device are provided which set a reference position for a measuring point to be measured by a scanning electron microscope and the like, based on position information of a reference pattern on an image acquired from the scanning electron microscope and based on a positional relation, detected by using design data, between the measuring point and the reference pattern formed at a position isolated from the measuring point. | 08-23-2012 |
Patent application number | Description | Published |
20080226177 | HIGH-ACCURACY PATTERN SHAPE EVALUATING METHOD AND APPARATUS - A quantity (or dispersion value) of a distribution of edge position due to random noise is expected to be reduced statistically to 1/N when N edge position data items are averaged. Using this property, the single page image is averaged in a vertical direction with various values of parameter S, and then the edge roughness index is calculated. The S-dependence of the edge roughness index is analyzed and a term of a dispersion value directly proportional to 1/S is determined as being due to noise. | 09-18-2008 |
20090020699 | MICROSTRUCTURED PATTERN INSPECTION METHOD - The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected. | 01-22-2009 |
20090232405 | METHOD AND APPARATUS FOR COMPUTING DEGREE OF MATCHING - A matching degree computing apparatus is provided for comparing an input image and an object template image and computing a matching degree between an input image and an object template image based on the compared result. The computing apparatus includes a transforming unit for transforming the input image so as to be matched to the template object region and a computing unit for computing a matching degree between the transformed input image and the template image. The transforming unit provides a shaping unit for shaping a non-background region to the form of the template object region in the object corresponding region of the input image and a processing unit for arranging the non-background region contacting with the template object corresponding region so that the non-background region has no substantial impact on the matching degree in the object non-corresponding region of the input image. | 09-17-2009 |
20100314541 | MICROSTRUCTURED PATTERN INSPECTION METHOD - The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected. | 12-16-2010 |
20110057101 | CHARGED PARTICLE BEAM SYSTEM - A charged particle beam system wherein the output of the secondary electron detector is detected while the retarding voltage is varied between the values for which the secondary electrons do not reach the sample and the values for which the secondary electrons reach the sample, and the surface potential of the sample is determined on the basis of the relationship between the retarding voltage and the detected output of the secondary electron detector. | 03-10-2011 |
20120153145 | SCANNING ELECTRON MICROSCOPE AND SAMPLE OBSERVATION METHOD - A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning condition according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided. | 06-21-2012 |
20120305764 | METHOD OF DETERMINING THE CONCAVITY AND CONVEXITY ON SAMPLE SURFACE, AND CHARGED PARTICLE BEAM APPARATUS - A method and apparatus suitable for determining the concavity and convexity of line and space patterns formed on a sample. A profile is formed based on a charged-particle beam scan, the profile having a peak. When one foot portion of the peak converges more gradually than the other foot portion, a portion of the sample corresponding to the one foot portion is determined to be a convex portion. Alternatively, when one foot portion of the peak converges more steeply than the other foot portion, a portion of the sample corresponding to the one foot portion is determined to be a concave portion. | 12-06-2012 |
20130141563 | IMAGE FORMING DEVICE AND COMPUTER PROGRAM - The purpose of the present invention is to provide an image forming apparatus and a computer program such that extraction of information about distortion in a charged particle beam scan area can be implemented. An embodiment for achieving the purpose proposes: an image forming apparatus that integrates image data obtained by a charged particle beam apparatus and that calculates, from a plurality of images with different scan directions of the charged particle beam apparatus, first information about the amount of change in a feature quantity in accordance with the time of irradiation of the charged particle beam, second information about the amount of change in the feature quantity before and after a change in beam scan direction, and/or third information about a position error of a pattern on the image before and after the change in beam scan direction; and a computer program for causing a computing apparatus to perform the above process. | 06-06-2013 |
20130146763 | Image Processing Device, Charged Particle Beam Device, Charged Particle Beam Device Adjustment Sample, and Manufacturing Method Thereof - An object of the present invention is to provide an image processing apparatus that quickly and precisely measures or evaluates a distortion in a field of view and a charged particle beam apparatus. To attain the object, an image processing apparatus or the like is proposed which acquires a first image of a first area of an imaging target and a second image of a second area that is located at a different position than the first area and partially overlaps with the first area and determines the distance between a measurement point in the second image and a second part of the second image that corresponds to a particular area for a plurality of sites in the overlapping area of the first image and the second image. | 06-13-2013 |
20130175447 | Scanning Electron Microscope - Provided is a scanning electron microscope equipped with a high-speed and high-precision astigmatism measuring means to be used when both astigmatism generated by an electron-beam column and astigmatism generated from the surroundings of a measuring sample exist. This scanning electron microscope is characterized in controlling an astigmatism corrector ( | 07-11-2013 |
20130301954 | CHARGED PARTICLE BEAM DEVICE, AND IMAGE ANALYSIS DEVICE - In a scanning electron microscope, if a failure is caused to occur in a SEM image by the influence of a disturbance such as magnetic field or vibration inside and from outside the device, the cause is identified simply and accurately using this SEM image. There is provided a measurement technique whose measurement accuracy is not influenced by a roughness of SEM image pattern. A one-dimensional scanning is performed in a scanning-line direction (X direction) by setting the Y-direction scanning gain at zero at the time of acquiring the SEM image, and a two-dimensional image is created by arranging image information, which is obtained by the scanning, in a time-series manner in the Y direction. A shift-amount data on the two-dimensional image is acquired using a correlation function, and the magnetic field or vibration included within the SEM image is measured by a frequency analysis of the data. | 11-14-2013 |
20140027635 | CHARGED PARTICLE BEAM APPARATUS - Provided is a charged particle beam apparatus adapted so that even when an additional device is not mounted in the charged particle beam apparatus, the apparatus rapidly removes, by neutralizing, a local charge developed on a region of a sample that has been irradiated with a charged particle beam. | 01-30-2014 |