Komatani, JP
Hideya Komatani, Toride-Shi JP
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20140343038 | 1,2,4-TRIAZINE-6-CARBOXAMIDE DERIVATIVE - The present invention provides a compound represented by the following general formula (I) or a salt thereof which has a Syk inhibitory effect (in the formula R | 11-20-2014 |
Kauznori Komatani, Nagoya-Shi JP
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20140156276 | CONVERSATION SYSTEM AND A METHOD FOR RECOGNIZING SPEECH - A dialogue system which correctly identifies an utterance directed to a dialogue system by using various pieces of information including information other than a voice recognition result without requiring a special signal is provided. | 06-05-2014 |
Kazunori Komatani, Saitama JP
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20080319748 | Conversation System and Conversation Software - A first domain satisfying a first condition concerning a current utterance understanding result and a second domain satisfying a second condition concerning a selection history are specified. For each of the first and second domains, indices representing reliability in consideration of the utterance understanding history, selection history, and utterance generation history are evaluated. Based on the evaluation results, one of the first, second, and third domains is selected as a current domain according to a selection rule. | 12-25-2008 |
Kazunori Komatani, Kyoto JP
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20080294437 | LANGUAGE UNDERSTANDING DEVICE - A language understanding device includes: a language understanding model storing unit configured to store word transition data including pre-transition states, input words, predefined outputs corresponding to the input words, word weight information, and post-transition states, and concept weighting data including concepts obtained from language understanding results for at least one word, and concept weight information corresponding to the concepts; a finite state transducer processing unit configured to output understanding result candidates including the predefined outputs, to accumulate word weights so as to obtain a cumulative word weight, and to sequentially perform state transition operations; a concept weighting processing unit configured to accumulate concept weights so as to obtain a cumulative concept weight; and an understanding result determination unit configured to determine an understanding result from the understanding result candidates by referring to the cumulative word weight and the cumulative concept weight. | 11-27-2008 |
Kazunori Komatani, Nagoya-Shi JP
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20140249826 | SPEECH DIALOGUE SYSTEM AND SPEECH DIALOGUE METHOD - A speech dialogue system generates a response sentence in a way to improve the efficiency of the dialogue with the user, based on a result of estimation on an attribute of a proper name in an utterance of a user. The system includes a database attribute estimation unit to estimate the attribute of the input proper name by utilizing a database, and a web attribute estimation unit to estimate an attribute of an input proper name by utilizing information on the web. A reliability integration unit calculates integrated reliability of estimation for each of possible attributes obtained from the estimation by the units, by integrating first reliability of the estimation. A response generation unit generates a response sentence to an input utterance based on the integrated reliabilities of the possible attributes. | 09-04-2014 |
Mitsutoyo Komatani, Tokyo JP
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20100107817 | METHOD FOR RECOVERING VALUABLE METALS FROM WASTES - A method for recovering valuable metals, which include at least one M element selected from the group consisting of Mo, Ni and Co, and V, in the form of iron-based alloys from a waste containing the valuable metals, comprising the steps of (a) roasting the waste to form a roasted ore containing oxides of the valuable metals; (b-1) heating the roasted ore together with an iron source and a flux, to form an iron-based alloy melt; (b-2) adding a reducing agent having higher affinity for oxygen than V at a reduction temperature to the melt, thereby reducing the oxides of the valuable metals to form an Fe-M-V alloy melt; (c) oxidizing substantially only V in the Fe-M-V alloy melt to form a V-oxide-containing slag and an Fe-M alloy melt; and (d) separating the V-oxide-containing slag from the Fe-M alloy melt. | 05-06-2010 |
Shinjiro Komatani, Tokyo JP
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20090061295 | Battery tray, electronic apparatus, and vertical grip device - A battery tray in which two batteries each having a thin and long shape are accommodated includes two thin and long shaped battery accommodation spaces in which the two batteries are accommodated in a state where the batteries are arranged such that the longitudinal direction of the batteries extends on the same straight line. | 03-05-2009 |
20130299369 | ACCOMMODATING CASE FOR PORTABLE RECORDING MEDIUM - An accommodating case from which a user can easily detach a recording medium is provided. An accommodating case includes an inner surface thereof with a medium disposition area that is an area to dispose the recording medium. In addition, the accommodating case includes an engagement plate portion for engaging with edges of the recording medium so that the recording medium disposed in the medium disposition area is prevented from separating from the inner surface thereof. Furthermore, the accommodating case includes a movable plate portion defining a part of the inner surface thereof. The movable plate portion is movable relative the other portion of the inner surface of the accommodating case to be recessed toward the outside of the accommodating case. The movable plate portion is located over the medium disposition area and an outside area of the medium disposition area. | 11-14-2013 |
Shintaro Komatani, Osaka JP
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20100031758 | ANALYTICAL SAMPLE DRYING METHOD AND DRYING APPARATUS - A soil for metal analysis having a high water content of 40% or more is dried up to 20% or less in water content within a short period of time. | 02-11-2010 |
Shintaro Komatani, Kyoto-Shi JP
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20110085638 | SAMPLE CELL FOR FLUORESCENT X-RAY ANALYSIS AND SAMPLE CELL ASSEMBLY INSTRUMENT - In a sample cell that is sealed with an X-ray transmission sheet after a sample such as a liquid fuel or the like is contained therein, when an internal pressure is increased, a cup end surface is deformed so as to increase an internal capacity of the sample cell before the X-ray transmission sheet serving as a window part is expanded. The cup end surface is formed by folding a film-like material and, when the internal pressure of the sample cell is increased, the cup end surface is unfolded outwardly of the sample cell to increase the internal capacity of the sample cell. The increase in pressure is relieved by the increase in capacity, and the expansion of the X-ray transmission sheet is thereby prevented. | 04-14-2011 |
Shintaro Komatani, Kyoto JP
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20100226477 | X-RAY CONVERGENCE ELEMENT AND X-RAY IRRADIATION DEVICE - An X-ray convergence element and an X-ray irradiation device including the X-ray convergence element are provided. The X-ray convergence element can extend a working distance from an exit-side opening end thereof to a specimen, and can perform analysis of the specimen with rough surface, a fluorescent X-ray analysis, and a X-ray diffraction analysis, regardless of a size of the specimen. An X-ray blocking member | 09-09-2010 |
Tsutomu Komatani, Yokohama-Shi JP
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20130122669 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes: forming a first active region, a second active region, an inactive region located between the first active region and the second active region, and a third active region, which crosses the inactive region to electrically connect the first active region to the second active region, in a semiconductor layer; forming an insulating layer on the semiconductor layer; and forming an opening selectively in the insulating layer by dry etching. | 05-16-2013 |
20130260517 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes: forming a first film on a nitride semiconductor layer so as to contact the nitride semiconductor layer and have a thickness equal to or larger than 1 nm and equal to or smaller than 5 nm, the first film being made of silicon nitride having a composition ratio of silicon to nitrogen larger than 0.75, silicon oxide having a composition ratio of silicon to oxygen larger than 0.5, or aluminum; and forming a source electrode, a gate electrode and a drain electrode on the nitride semiconductor layer. | 10-03-2013 |
20130264657 | SEMICONDUCTOR DEVICE - A semiconductor device includes a gate electrode formed on a nitride semiconductor layer, and a source electrode and a drain electrode provided on the nitride semiconductor layer so as to interpose the gate electrode therebetween, a first silicon nitride film that covers the gate electrode and the silicon nitride film and has a composition ratio of silicon to nitrogen equal to or larger than 0.75, the first silicon nitride film having compressive stress solely, and a second. silicon nitride film that is formed on the first silicon nitride film and has a composition ratio of silicon to nitrogen equal to or larger than 0.75 solely, a whole stacked layer structure of the first and second silicon nitride films having tensile stress. | 10-10-2013 |
20140179078 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes: forming a silicon nitride film having a refractive index equal to or larger than 2.2 on a nitride semiconductor layer; and introducing at least one of elements that are oxygen, nitrogen, fluorine, phosphorus, sulfur and selenium into the silicon nitride film, the silicon nitride film including the at least one of elements remaining on the nitride semiconductor layer. The at least one of elements is introduced by a process of exposing the silicon nitride film to plasma including the at least one of elements, a process of ion-implanting the at least one of elements into the silicon nitride film, or a process of thermally diffusing the at least one of elements into the silicon nitride film. The silicon nitride film is formed in contact with a surface of the nitride semiconductor layer. | 06-26-2014 |
20140329366 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device including: forming a silicon layer on an upper face of a nitride semiconductor layer including a channel layer of a FET; thermally treating the nitride semiconductor layer in the process of forming the silicon layer or after the process of forming the silicon layer; and forming an insulating layer on an upper face of the silicon layer after the process of forming the silicon layer. | 11-06-2014 |
20150034960 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device is provided as a semiconductor device manufacturing method that permits an opening to be formed in a good shape in a resist film. This manufacturing method is a semiconductor device manufacturing method having: a step of forming an insulating film | 02-05-2015 |
Tsutomu Komatani, Kanagawa JP
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20100317164 | SEMICONDUCTOR DEVICE FABRICATION METHOD - The present invention is a method for fabricating a semiconductor device including the steps of: a first silicon nitride film having a refractive index of 2.2 or higher on a semiconductor layer made of a GaN- or InP-based semiconductor; forming, on the first silicon nitride film, a second silicon nitride film having a refractive index lower than that of the first silicon nitride; forming a source electrode and a drain electrode in areas in which the semiconductor layer is exposed; annealing the source electrode and the drain electrode in a state in which the first silicon nitride film and the second silicon nitride film are formed; and forming a gate electrode on the semiconductor layer between the source electrode and the drain electrode. | 12-16-2010 |
20110081784 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes: forming step of forming an etching mask on a second main face of a substrate, the etching mask being made of Cu or Cu alloy and having an opening, the second main face being on an opposite side of a first main face of the substrate where a nitride semiconductor layer is provided; a first etching step of applying a dry etching to the second main face of the substrate with use of the etching mask so that all of or a part of the nitride semiconductor layer is left; a removing step of removing the etching mask after the first etching step; and a second etching step of dry-etching the left nitride semiconductor layer after the removing step. | 04-07-2011 |
20120021597 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device including: forming a silicon layer on an upper face of a nitride semiconductor layer including a channel layer of a FET; thermally treating the nitride semiconductor layer in the process of forming the silicon layer or after the process of forming the silicon layer; and forming an insulating layer on an upper face of the silicon layer after the process of forming the silicon layer. | 01-26-2012 |
20120028423 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes: forming a channel layer; forming an electron supply layer on the channel layer; forming a cap layer made of gallium nitride on the electron supply layer; and performing an oxygen plasma treatment to an upper surface of the cap layer at a power density of | 02-02-2012 |
20120220127 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes: forming a metal layer having a surface containing gold; growing a first silicon nitride layer in contact with the metal layer by a plasma-enhanced vapor deposition method; growing a second silicon nitride layer in contact with the first silicon nitride layer by a plasma-enhanced vapor deposition method at a layer-forming rate higher than that of the first silicon nitride layer, the second silicon nitride layer having a silicon composition ratio smaller than that of the first silicon nitride layer. | 08-30-2012 |