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Komarnycky

Nicholas Komarnycky, Kitchener CA

Patent application numberDescriptionPublished
20100263707BASE STRUCTURE FOR III-V SEMICONDUCTOR DEVICES ON GROUP IV SUBSTRATES AND METHOD OF FABRICATION THEREOF - The structure presented herein provides a base structure for semiconductor devices, in particular for III-V semiconductor devices or for a combination of III-V and Group IV semiconductor devices. The fabrication method for a base substrate comprises a buffer layer, a nucleation layer, a Group IV substrate and possibly a dopant layer. There are, in a general aspect, two growth steps: firstly the growth of a lattice-matched III-V material on a Group IV substrate, followed by secondly the growth of a lattice-mismatched III-V layer. The first layer, called the nucleation layer, is lattice-matched or closely lattice-matched to the Group IV substrate while the following layer, the buffer layer, deposited on top of the nucleation layer, is lattice-mismatched to the nucleation layer. The nucleation layer can further be used as a dopant source to the Group IV substrate, creating a p-n junction in the substrate through diffusion. Alternatively a separate dopant layer may be introduced.10-21-2010

O. Nicholas Komarnycky, Kitchener CA

Patent application numberDescriptionPublished
20080239297MULTIPLE HEAD LASER PROJECTOR AND METHOD - A multiple laser head projector includes a sensor that senses the presence or absence of a laser beam from a first of the laser heads and signals a switching device to switch to a second laser head when a laser beam is not detected by the sensor from the first laser head. Thus, the multiple laser head projector may be utilized to provide continuous operation of the multiple head laser projector when one of the lasers fails. The multiple head laser projector may also be utilized for diagnostic testing of the laser heads, such as during start-up. Further, the multiple head laser projector may be utilized to signal the power output of the laser heads and thus the expected remaining life of the laser heads.10-02-2008

Patent applications by O. Nicholas Komarnycky, Kitchener CA

Peter Komarnycky, Lebanon, NJ US

Patent application numberDescriptionPublished
20080287968IMPLANTS AND METHODS FOR PELVIC FLOOR REPAIR - A pelvic floor implant including a central body portion having an anterior edge having a centrally located recess therein, a posterior edge having a centrally located tab, and first and second lateral side edges. First and second strap-like extension portions extend outwardly to first and second distal ends from first and second end regions of the posterior edge of the central body portion. The first and second strap-like extension portions extending outwardly at an angle so as to form a substantially “Y” shaped implant in combination with the central body portion. First and second pockets are located at the first and second distal ends of the first and second strap-like extensions respectively, each having a closed end substantially adjacent to the distal end of the strap-like extension, and having an open end proximal thereto and opening toward the central body portion.11-20-2008