Patent application number | Description | Published |
20100123786 | PHOTOGRAPHING APPARATUS AND METHOD OF REMOVING FOREIGN SUBSTANCE - Provided are a photographing apparatus and a method of removing foreign substances. The photographing apparatus includes an imaging device for converting a captured image into an electrical signal; a vibration member mounted at an imaging plane side of the imaging device; a vibration-applying unit for vibrating the vibration member; and a vibration control unit inputting at least two different control signals such that input times of the at least two control signals are overlapped. | 05-20-2010 |
20130271639 | PHOTOGRAPHING APPARATUS, AND VIBRATION CONTROL METHOD - A photographing apparatus includes a supporting member which supports a photographing element such as an image sensor, a vibration means which vibrates an optical member provided on a front surface of the photographing element, and a control means which controls vibrations generated by the vibration means at two different frequencies, wherein the first frequency is around a natural frequency of the supporting member and the second frequency is around a natural frequency of the optical member. | 10-17-2013 |
20140160317 | METHOD AND APPARATUS FOR PHOTOGRAPHING AN IMAGE USING LIGHT FROM MULTIPLE LIGHT SOURCES - Provided is a photographing apparatus including: first and second light sources that respectively transmit a first light having a first spectral radiant characteristic and a second light having a second spectral radiant characteristic; an image device that captures an image of a subject by using the transmitted lights sources; a storage unit that stores a first reference output ratio corresponding to the first light and a second reference output ratio corresponding to the second light; and a determiner that determines a regular reflection area of the light sources by using a first captured image acquired by capturing an image of the subject by using the first light, a second captured image acquired by capturing an image of the subject by using the second light, the first reference output ratio, and the second reference output ratio. | 06-12-2014 |
20140160346 | IMAGING APPARATUS AND CAMERA INCLUDING THE SAME - An imaging apparatus includes an imaging element unit having an imaging element and an optical element which is integrally formed with the imaging element and through which a luminous flux of light for imaging passes, a first piezoelectric element, and a displacement increment mechanism connected to the first piezoelectric element and the imaging element unit. The displacement increment mechanism displaces the imaging element unit by expanding or contracting the first piezoelectric element, where a portion of the first piezoelectric element in a lengthwise direction thereof is attached to the optical element. | 06-12-2014 |
Patent application number | Description | Published |
20120160009 | EXHAUST GAS ANALYZING SYSTEM AND EXHAUST GAS ANALYZING METHOD - An exhaust gas analyzing system includes, on an upstream side of an analytical instrument, an exhaust gas introduction pipe of which one end is opened to an exhaust gas flow path through which exhaust gas from an engine flows and the other end is connected to the analytical instrument. A switching mechanism selectively switches between a sampling path that samples the exhaust gas from the exhaust gas introduction pipe to introduce the sampled exhaust gas into the analytical instrument and an air introduction path that introduces air into the analytical instrument. When the engine is operated, a path to the analytical instrument is switched to the sampling path by the switching mechanism. When the engine is stopped, the path is switched to the air introduction path by the switching mechanism. | 06-28-2012 |
20150185110 | VEHICLE DRIVE SYSTEM TESTING APPARATUS - This invention is directed to a testing apparatus for testing a vehicle drive system by connecting load devices to the vehicle drive system, wherein the testing apparatus includes a handle operation amount input part for inputting a handle operation amount corresponding to a handle operation of a vehicle, an accelerator operation amount input part for inputting an accelerator operation amount corresponding to an accelerator operation of the vehicle, a brake operation amount input part for inputting a brake operation amount corresponding to a brake operation of the vehicle, and a control part for controlling the load devices based on the operation amounts simultaneously inputted by at least two of the handle operation amount input part, the accelerator operation amount input part and the brake operation amount input part. | 07-02-2015 |
20150332520 | VEHICLE TEST SYSTEM, TEST CONDITION DATA GENERATION APPARATUS, AND VEHICLE TEST METHOD - A vehicle test system according to the present invention intends to comprehensively manage and operate multiple types of test apparatuses to smoothly perform vehicle development, problem correction, and the like. For this purpose, the vehicle test system includes an actual running data acquisition apparatus that acquires actual running data that is data related to states inside and outside of a vehicle in running on a road; multiple types of test apparatuses each of which performs a drive test or an operation test of a vehicle or a part of the vehicle in accordance with set test conditions; and a test condition data generation apparatus that from the actual running data, generates test condition data indicating test conditions necessary to reproduce a part or all of the running states indicated by the actual running data in a test apparatus specified from among the multiple types of test apparatuses. | 11-19-2015 |
20150332522 | VEHICLE TEST SYSTEM, TEST MANAGEMENT APPARATUS, AND VEHICLE TEST METHOD - The present invention mainly intends to provide a vehicle test system and the like that can easily mutually compare actual running data and test result data obtained from a test apparatus, or pieces of test result data. The vehicle test system includes an actual running data acquisition apparatus that acquires actual running data that is data related to states inside and outside of a vehicle in running on a road; a test apparatus each of which performs a drive test or an operation test of a vehicle or a part of the vehicle in accordance with a set test condition; and a test management apparatus that reproduces a part or all of the running states indicated by the actual running data in the test apparatus. Further, the test management apparatus receives test result data that is data indicating a test result by the test apparatus, and comparably outputs the test result data and the actual running data. | 11-19-2015 |
Patent application number | Description | Published |
20090280266 | BARRIER FILM AND LAMINATED MATERIAL, CONTAINER FOR WRAPPING AND IMAGE DISPLAY MEDIUM USING THE SAME, AND MANUFACTURING METHOD FOR BARRIER FILM - An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the present invention, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, wherein the barrier layer is a silicon oxide film having an atomic ratio in a range of Si:O:C=100:160 to 190:30 to 50, a peak position of infrared-ray absorption due to Si—O—Si stretching vibration between 1030 to 1060 cm | 11-12-2009 |
20100075082 | BARRIER FILM AND LAMINATED MATERIAL, CONTAINER FOR WRAPPING AND IMAGE DISPLAY MEDIUM USING THE SAME, AND MANUFACTURING METHOD FOR BARRIER FILM - An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the present invention, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, wherein the barrier layer is a silicon oxide film having an atomic ratio in a range of Si:O:C=100:140 to 170:20 to 40, peak position of infrared-ray absorption due to Si—O—Si stretching vibration between 1060 to 1090 cm | 03-25-2010 |
Patent application number | Description | Published |
20080248908 | Silent chain - In a silent chain comprising interleaved and relatively pivotable rows of link plates, protrusions formed in the link plates contact relatively pivotable link plates in adjacent rows so that the area of contact is reduced. The protrusions can be annular, or they can be in the form of arcs that are of a size and position such that the arcuate protrusions of each plate do not interfere with the arcuate protrusions of an adjacent plate as the chain bends during use. The plates can have rectangular protrusions, or arcuate protrusions each consisting of an arc-shaped collection of dot-shaped protrusions. | 10-09-2008 |
20080268996 | SILENT CHAIN - In a silent chain, a flank surface which comes into contact with a sprocket tooth at the start of engagement has a partially protruding portion continuously formed along the longitudinal direction of the flank surface. Only the partially protruding portions of link plates that initially contact the sprocket teeth are positively caused to wear during running in of the chain, so that protruding portions of flank surfaces of other link plates that did not initially contact the sprocket teeth are brought into contact with the sprocket teeth. | 10-30-2008 |
20090131209 | ROCKER JOINT PIN TYPE SILENT CHAIN - In a rocker joint silent chain, the link plates have two different engagement pitches, and the connecting pins are composed of combinations of rocker pins and joint pins, where each rocker pin has one of two thicknesses and each joint pin has one of two thicknesses, so that the rocker joint pins of the chain have three different thicknesses. The link plates and connecting pins are arranged randomly along the length of the chain. | 05-21-2009 |
20090239691 | SILENT CHAIN - The connecting pins of a chain protrude laterally from the chain, and are bent toward the inside of the loop formed by the chain so that they can stir lubricating oil in an oil bath, preventing localized heating and oil deterioration, and so that they can splash oil toward the central part of the chain for enhanced lubrication. | 09-24-2009 |
Patent application number | Description | Published |
20090098433 | Solid oxide fuel cell and separator - A solid oxide fuel cell is formed by arranging a fuel electrode layer and an air electrode layer on both surfaces of a solid electrolyte, respectively, a fuel electrode current collector and an air electrode current collector outside the fuel electrode layer and the air electrode layer, respectively, and separators outside the fuel electrode current collector and the air electrode current collector. In a first embodiment, a fuel gas and an oxidant gas are supplied from the separators to the fuel electrode layer and the oxidant electrode layer, respectively, through the fuel electrode current collector and the air electrode current collector, respectively. Each separator is formed by laminating a plurality of thin metal plates at least including a thin metal plate in which a first gas discharge opening is arranged in a central part and second gas discharge openings are circularly arranged in a peripheral part, and a thin metal plate with an indented surface. Gases discharged from the separators can be supplied to entire areas of the electrode layers through the current collectors, so that electric power generation can be performed. | 04-16-2009 |
20090098436 | POWER GENERATION CELL FOR SOLID ELECTROLYTE FUEL CELL - Provided is a power generation cell for a solid electrolyte fuel cell, in which a lanthanum gallate-based electrolyte is used as a solid electrolyte. Use of alternative energy for replacing petroleum can be promoted and it is possible to use waste heat using the solid electrolyte fuel cell, thus the solid electrolyte fuel cell is watched in views of resource nursing and the environment. The power generation cell is typically operated at 800 to 1000° C. However, currently, the power generation cell, which is operated at 600 to 800° C. by using the lanthanum gallate-based electrolyte, is suggested. Since a current power generation cell has a large size and has an insufficient output, there are demands for size reduction and high output. In the power generation cell, Sm-doped ceria particles are separately attached to a surface of porous nickel having a network frame structure. The demands are satisfied by using the anode. | 04-16-2009 |
20090169970 | Solid oxide fuel cell and separator - A solid oxide fuel cell is formed by arranging a fuel electrode layer and an air electrode layer on both surfaces of a solid electrolyte, respectively, a fuel electrode current collector and an air electrode current collector outside the fuel electrode layer and the air electrode layer, respectively, and separators ( | 07-02-2009 |
Patent application number | Description | Published |
20090274941 | Power Generation Cell for Solid Electrolyte Fuel Cell and Structure of Fuel Electrode Thereof - The present invention provides a power generation cell for a solid electrolyte fuel cell using a lanthanum gallate solid electrolyte as a solid electrolyte, particularly a structure of a fuel electrode of the power generation cell for the solid electrolyte fuel cell. The fuel electrode according to the first aspect of the present invention is a fuel electrode of a power generation cell for a solid electrolyte fuel cell in which particles (2) of a B-doped ceria (herein, B represents one or two or more of Sm, La, Gd, Y and Ca) are attached to the surface of the framework of porous nickel having a framework structure in which a network is formed by mutual sintering of nickel particles (1). The ceria particles (2) are distributed with the highest density and attached around the framework structure portions (3) the sectional areas of which are made small by the mutual sintering of the nickel particles (1) to be bonded to each other. | 11-05-2009 |
20100104916 | Separator for fuel cell, method for producing separator, and solid oxide fuel cell - Gas discharge ports are provided in almost the entire area of a layer surface of a separator, and a gas for reaction is discharged like a shower from the separator toward a power generation cell. The separator is constructed by layering plate-shaped members containing iron-base alloy, nickel-base alloy, or chrome-base alloy as the base material. Silver, silver alloy, copper, or copper alloy is plated on both sides or one side of the base material of the plate-shaped member. The construction above can increase durability of a separator and enables the separator and a solid oxide fuel cell to be stably used for a long period. | 04-29-2010 |
20110151348 | Flat plate laminated type fuel cell and fuel cell stack - A flat plate laminated type high-temperature fuel cell, with internal manifold structure, has a laminated body constructed by alternately laminating power generation cells ( | 06-23-2011 |
20120171595 | POWER GENERATION CELL FOR SOLID ELECTROLYTE FUEL CELL AND STRUCTURE OF FUEL ELECTRODE THEREOF - Provided is a power generation cell for a solid electrolyte fuel cell using a lanthanum gallate solid electrolyte as a solid electrolyte, particularly a structure of a fuel electrode of the power generation cell for the solid electrolyte fuel cell. The fuel electrode is of a power generation cell for a solid electrolyte fuel cell in which particles ( | 07-05-2012 |
Patent application number | Description | Published |
20140170559 | METHOD FOR MANUFACTURING ELECTROSTATIC LATENT IMAGE DEVELOPING TONER - Regarding a method for manufacturing an electrostatic latent image developing toner, which includes a process for aggregating particulates of components such as a binder resin, a colorant, and a releasing agent, a dispersion solution of binder resin particulates obtained by a specific method is used. The dispersion solution of the binder resin particulates are prepared as an oil-in-water emulsion containing particulates including the binder resin by mixing the binder resin, which is polyester resin, in a molten state with an organic base in a liquid state so as to neutralize the binder resin and subsequently mixing a resin molten solution with water. The amount of use of the organic base is 6 parts by mass or more with respect to 100 parts by mass of the binder resin. The degree of neutralization of the binder resin neutralized by the organic base is 100% or more. | 06-19-2014 |
20140295345 | METHOD FOR MANUFACTURING ELECTROSTATIC LATENT IMAGE DEVELOPING TONER - An electrostatic latent image developing toner is manufactured by mixing an aqueous medium dispersion liquid (X) containing negatively chargeable toner cores and an aqueous medium dispersion liquid (Y) containing positively chargeable resin particulates, followed by stirring the mixture liquid to form shell layers each on a surface of the toner cores with the resin particulates. The shell layers are formed with the resin particulates subjected to a stirring treatment together with an anionic surfactant. | 10-02-2014 |
20150099221 | TONER - For at least 80% of toner particles in a toner, along at least 80% of circumferential length of a toner particle cross-section, a shell layer has a thickness of at least 5 nm and satisfies a condition that a ratio of an intensity INc relative to an intensity INs is no greater than 0.2. For at least 80% of the toner particles in the toner, along at least 80% of the circumferential length of the toner particle cross-section, the shell layer has a thickness of at least 5 nm and satisfies a condition that a ratio of an intensity ISc relative to an intensity ISs is no greater than 0.2. | 04-09-2015 |
20150118615 | TONER AND METHOD FOR MANUFACTURING THE SAME - A toner includes a plurality of toner particles each having a core and a shell layer on a surface of the core. In a cross section of the toner particle analyzed by EELS, for at least 50% of a circumferential length of the core, the shell layer has one or more portions each satisfying conditions that: a ratio of INc to INs is no less than 0.0 and no greater than 0.2; and a thickness of the shell layer is at least 5 nm. Here, INs indicates an intensity of an N-K shell absorption-edge originating from nitrogen atoms in the shell layer, and INc indicates an intensity of an N-K shell absorption-edge originating from nitrogen atoms in the core. In addition, the longest length among the one or more portions of the shell layer each satisfying the conditions is at least 100 nm. | 04-30-2015 |
Patent application number | Description | Published |
20090315065 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - Provided are a nitride semiconductor light-emitting diode including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and a nitride semiconductor active layer set between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, and having a first transparent electrode layer containing indium tin oxide and a second transparent electrode layer containing tin oxide on a surface of the p-type nitride semiconductor layer opposite to the side provided with the nitride semiconductor active layer and a method of manufacturing the nitride semiconductor light-emitting diode. | 12-24-2009 |
20100252844 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE - A nitride semiconductor light emitting diode includes at least an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer. The active layer is formed of one first nitride semiconductor layer having a highest In ratio in the light emitting diode. The light emitting diode further includes at least one of a second nitride semiconductor layer located between the active layer and the n-type nitride semiconductor layer and including an InGaN layer, and a third nitride semiconductor layer located between the active layer and the p-type nitride semiconductor layer and including an InGaN layer. Respective In (Indium) ratios of the InGaN layers included in the second nitride semiconductor layer and the InGaN layers included in the third nitride semiconductor layer are lower than the In ratio of the first nitride semiconductor layer forming the active layer. The LED with high luminous efficiency can thus be provided. | 10-07-2010 |
20110049544 | NITRIDE SEMICONDUCTOR ELEMENT, METHODS FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR LAYER, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - Described herein is a method for manufacturing a nitride semiconductor layer by stacking, on a silicon nitride layer, the first nitride semiconductor layer having a surface inclined with respect to the surface of the silicon nitride layer and then stacking the second nitride semiconductor layer on the first nitride semiconductor layer, a nitride semiconductor element and a nitride semiconductor light-emitting element each including the nitride semiconductor layer; and a method for manufacturing the nitride semiconductor element. | 03-03-2011 |
20110127539 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device includes an n type nitride semiconductor layer, a light-emitting layer formed on the n type nitride semiconductor layer, a first p type nitride semiconductor layer formed on the light-emitting layer, an intermediate layer formed on the first p type nitride semiconductor layer to alternately cover and expose a surface of the first p type nitride semiconductor layer, and a second p type nitride semiconductor layer formed on the intermediate layer. The intermediate layer is made of a compound containing Si and N as constituent elements. | 06-02-2011 |
20120112159 | NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - A nitride semiconductor light emitting element includes: an n type nitride semiconductor layer formed on a substrate; a light emitting layer formed on the n type nitride semiconductor layer; and a p type nitride semiconductor layer formed on the light emitting layer. The n type nitride semiconductor layer is constituted by one layer or two or more stacked layers. At least one layer constituting the n type nitride semiconductor layer contains Si and Sn as n type dopants and contains In as an isoelectronic dopant. | 05-10-2012 |
20120273758 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE DEVICE - A nitride semiconductor light-emitting diode device includes an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer provided between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, while the active layer has a multiple quantum well structure including a quantum well layer and a barrier layer in contact with the p-type semiconductor layer, the barrier layer consists of a two-layer structure of an AlGaN layer and a GaN layer, and the AlGaN layer included in the barrier layer is in contact with a side of the quantum well layer closer to the p-type nitride semiconductor layer | 11-01-2012 |
20130001509 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer. | 01-03-2013 |
20130089973 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - A method of manufacturing a nitride semiconductor device includes the step of forming a second nitride semiconductor layer having an inclined facet by metal-organic chemical vapor deposition, in which a molar flow ratio of a group V element gas to a group III element gas that are supplied to a growth chamber of a metal-organic chemical vapor deposition growth apparatus is set at 240 or less. | 04-11-2013 |
20130118414 | ILLUMINATION DEVICE FOR USE IN AQUACULTURE AND AQUACULTURE DEVICE - A light emitting element for emitting at least two types of light having respective emission peak wavelengths which are different, by not less than 5 nm, from each other in the range of 400 nm to 570 nm, is provided in a fish preserve where fish is to be cultured. | 05-16-2013 |
20130127329 | LIGHTING DEVICE FOR GROWING PLANT - A lighting device for growing a plant includes: not less than two sorts of semiconductor light-emitting element, each having a peak emission wavelength in a range of 380 nm to 500 nm, the not less than two sorts of semiconductor light-emitting element being different from each other in peak emission wavelength by not less than 5 nm; and a red fluorescent material which (i) is excited by light of at least one of the not less than two sorts of semiconductor light-emitting element and (ii) has a peak emission wavelength in a range of 600 nm to 780 nm. | 05-23-2013 |
20150137173 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride semiconductor light-emitting element including a high concentration silicon-doped layer doped with silicon at a high concentration of 2×10 | 05-21-2015 |
20150255673 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer. | 09-10-2015 |
20150325741 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device is provided with a substrate having depression and projection, a base layer, and a structure of a stack of layers of nitride semiconductor at least having a light emitting layer sequentially. A cavity is provided in the base layer over a projection included in the depression and projection. | 11-12-2015 |
20150349197 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high as the average n-type dopant concentration of the first n-type nitride semiconductor layer, and the average n-type dopant concentration of the n-type electron-injection layer is 1.5 times or more as high as the average n-type dopant concentration of the second n-type nitride semiconductor layer. | 12-03-2015 |
Patent application number | Description | Published |
20080217646 | Nitride semiconductor light emitting device - The present invention presents a nitride semiconductor light emitting device including a substrate, a first n-type nitride semiconductor layer, a light emitting layer, a p-type nitride semiconductor layer, a p-type nitride semiconductor tunnel junction layer, an n-type nitride semiconductor tunnel junction layer, and a second n-type semiconductor layer, in which the p-type and n-type nitride semiconductor tunnel junction layers form a tunnel junction, at least one of the p-type and n-type nitride semiconductor tunnel junction layers contains In, at least one of In-containing layers contacts with a layer having a larger band gap than the In-containing layer, and at least one of shortest distances between an interface of the In-containing layer and the layer having a larger band gap and an interface of the p-type and n-type nitride semiconductor tunnel junction layers is less than 40 nm. | 09-11-2008 |
20080237571 | Semiconductor light emitting device and nitride semiconductor light emitting device - The present invention is a semiconductor light emitting device including an n-type semiconductor layer, an active layer, a first p-type semiconductor layer between the n-type semiconductor layer and the active layer, and a second p-type semiconductor layer on the opposite side of the first p-type semiconductor layer from the active layer. Further, the present invention is a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a nitride semiconductor active layer, a first p-type nitride semiconductor layer between the n-type nitride semiconductor layer and the nitride semiconductor active layer, and a second p-type nitride semiconductor layer on the opposite side of the first p-type nitride semiconductor layer from the nitride semiconductor active layer. | 10-02-2008 |
Patent application number | Description | Published |
20150013638 | DUAL-FUEL DIESEL ENGINE AND OPERATION METHOD OF THE SAME - When shifting to the single combustion mode, an electromagnetic opening-and-closing valve V | 01-15-2015 |
20150047620 | TWO-CYCLE GAS ENGINE - A two-cycle gas engine includes a cylinder, a cylinder head, a piston that defines a combustion chamber with a surrounding wall of the cylinder and the cylinder head, a fuel gas injector, an ignition unit, a scavenging port configured to supply air into the combustion chamber upon the piston being positioned in vicinity of a bottom dead center, a fuel gas injection timing control unit configured to cause the fuel gas injector to inject the fuel gas upon the piston being positioned at 10° to 100° before top dead center in an ascending stroke and to cause the fuel gas injector to inject the fuel gas upon the piston being positioned in vicinity of the top dead center, and an ignition timing control unit configured to ignite the fuel gas inside the combustion chamber upon the piston being positioned in the vicinity of the top dead center. | 02-19-2015 |
20150075506 | TWO-CYCLE GAS ENGINE - A two-cycle gas engine includes a piston that defines a main combustion chamber with a surrounding wall of a cylinder and a cylinder head, a fuel gas injector configured to inject fuel gas, a scavenging port that supplies air into the main combustion chamber upon the piston being positioned in vicinity of a bottom dead center, a precombustion chamber cap that defines a precombustion chamber inside thereof, a fuel injection timing control unit configured to inject the fuel gas into the main combustion chamber and to inject the fuel gas into the main combustion chamber upon the piston being positioned in the vicinity of the top dead center, and an ignition timing control unit configured to ignite a mixed air of the fuel gas and the air inside the precombustion chamber upon the piston being positioned in the vicinity of the top dead center. | 03-19-2015 |
20150211464 | FUEL GAS INJECTION VALVE, DUAL-FUEL GAS ENGINE, AND FUEL GAS INJECTION METHOD - A fuel gas injection valve according to the present invention includes: a holder including a first injection hole through which fuel gas is injected to produce premixed fuel, and a second injection hole through which fuel gas is injected to produce diffusion fuel; a first needle valve that slidably reciprocates in the holder along an axial direction to open and close the first injection hole and the second injection hole; and a second needle valve having a sealing face on the top thereof and a through-hole provided along the axial direction at the central portion in a radial direction of the second needle valve, the sealing face being brought into contact with a needle valve seat provided in the holder, the first needle valve being slidably inserted into the through-hole, and the second needle valve reciprocating in the holder along the axial direction to prevent fuel gas from circulating to the first injection hole and the second injection hole when the sealing face is in contact with the needle valve seat, and to allow the fuel gas to circulate to the first injection hole or the second injection hole when the sealing face is separated from the needle valve seat. | 07-30-2015 |
20150300284 | DUAL-FUEL DIESEL ENGINE - An object is to, in a low-load operating range of a dual-fuel diesel engine or a dual-fuel diesel engine unit including a plurality of the dual-fuel diesel engines, reduce the amount of injection of oil fuel so as to make it possible to make exhaust gas less harmful and to reduce fuel cost. On a cylinder head, a plurality of dual-fuel injectors are disposed, each of which having a gas fuel injector that injects a gas fuel being a main fuel and a pilot fuel injector that injects an oil fuel. In a low-load operating range where it is not necessary for the dual-fuel injectors to inject fuel at the same time for ignition, fuel is injected alternately from the dual-fuel injectors and combusted in every single combustion cycle. As a result, it is possible to halve the amount of injection of oil fuel in the low-load operating range. | 10-22-2015 |