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| 20080248908 | Silent chain - In a silent chain comprising interleaved and relatively pivotable rows of link plates, protrusions formed in the link plates contact relatively pivotable link plates in adjacent rows so that the area of contact is reduced. The protrusions can be annular, or they can be in the form of arcs that are of a size and position such that the arcuate protrusions of each plate do not interfere with the arcuate protrusions of an adjacent plate as the chain bends during use. The plates can have rectangular protrusions, or arcuate protrusions each consisting of an arc-shaped collection of dot-shaped protrusions. | 10-09-2008 |
| 20080268996 | SILENT CHAIN - In a silent chain, a flank surface which comes into contact with a sprocket tooth at the start of engagement has a partially protruding portion continuously formed along the longitudinal direction of the flank surface. Only the partially protruding portions of link plates that initially contact the sprocket teeth are positively caused to wear during running in of the chain, so that protruding portions of flank surfaces of other link plates that did not initially contact the sprocket teeth are brought into contact with the sprocket teeth. | 10-30-2008 |
| 20090131209 | ROCKER JOINT PIN TYPE SILENT CHAIN - In a rocker joint silent chain, the link plates have two different engagement pitches, and the connecting pins are composed of combinations of rocker pins and joint pins, where each rocker pin has one of two thicknesses and each joint pin has one of two thicknesses, so that the rocker joint pins of the chain have three different thicknesses. The link plates and connecting pins are arranged randomly along the length of the chain. | 05-21-2009 |
| 20090239691 | SILENT CHAIN - The connecting pins of a chain protrude laterally from the chain, and are bent toward the inside of the loop formed by the chain so that they can stir lubricating oil in an oil bath, preventing localized heating and oil deterioration, and so that they can splash oil toward the central part of the chain for enhanced lubrication. | 09-24-2009 |
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| 20090280266 | BARRIER FILM AND LAMINATED MATERIAL, CONTAINER FOR WRAPPING AND IMAGE DISPLAY MEDIUM USING THE SAME, AND MANUFACTURING METHOD FOR BARRIER FILM - An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the present invention, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, wherein the barrier layer is a silicon oxide film having an atomic ratio in a range of Si:O:C=100:160 to 190:30 to 50, a peak position of infrared-ray absorption due to Si—O—Si stretching vibration between 1030 to 1060 cm | 11-12-2009 |
| 20100075082 | BARRIER FILM AND LAMINATED MATERIAL, CONTAINER FOR WRAPPING AND IMAGE DISPLAY MEDIUM USING THE SAME, AND MANUFACTURING METHOD FOR BARRIER FILM - An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the present invention, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, wherein the barrier layer is a silicon oxide film having an atomic ratio in a range of Si:O:C=100:140 to 170:20 to 40, peak position of infrared-ray absorption due to Si—O—Si stretching vibration between 1060 to 1090 cm | 03-25-2010 |
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| 20090274941 | Power Generation Cell for Solid Electrolyte Fuel Cell and Structure of Fuel Electrode Thereof - The present invention provides a power generation cell for a solid electrolyte fuel cell using a lanthanum gallate solid electrolyte as a solid electrolyte, particularly a structure of a fuel electrode of the power generation cell for the solid electrolyte fuel cell. The fuel electrode according to the first aspect of the present invention is a fuel electrode of a power generation cell for a solid electrolyte fuel cell in which particles (2) of a B-doped ceria (herein, B represents one or two or more of Sm, La, Gd, Y and Ca) are attached to the surface of the framework of porous nickel having a framework structure in which a network is formed by mutual sintering of nickel particles (1). The ceria particles (2) are distributed with the highest density and attached around the framework structure portions (3) the sectional areas of which are made small by the mutual sintering of the nickel particles (1) to be bonded to each other. | 11-05-2009 |
| 20100104916 | Separator for fuel cell, method for producing separator, and solid oxide fuel cell - Gas discharge ports are provided in almost the entire area of a layer surface of a separator, and a gas for reaction is discharged like a shower from the separator toward a power generation cell. The separator is constructed by layering plate-shaped members containing iron-base alloy, nickel-base alloy, or chrome-base alloy as the base material. Silver, silver alloy, copper, or copper alloy is plated on both sides or one side of the base material of the plate-shaped member. The construction above can increase durability of a separator and enables the separator and a solid oxide fuel cell to be stably used for a long period. | 04-29-2010 |
| 20110151348 | Flat plate laminated type fuel cell and fuel cell stack - A flat plate laminated type high-temperature fuel cell, with internal manifold structure, has a laminated body constructed by alternately laminating power generation cells ( | 06-23-2011 |
| 20120171595 | POWER GENERATION CELL FOR SOLID ELECTROLYTE FUEL CELL AND STRUCTURE OF FUEL ELECTRODE THEREOF - Provided is a power generation cell for a solid electrolyte fuel cell using a lanthanum gallate solid electrolyte as a solid electrolyte, particularly a structure of a fuel electrode of the power generation cell for the solid electrolyte fuel cell. The fuel electrode is of a power generation cell for a solid electrolyte fuel cell in which particles ( | 07-05-2012 |
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| 20090098433 | Solid oxide fuel cell and separator - A solid oxide fuel cell is formed by arranging a fuel electrode layer and an air electrode layer on both surfaces of a solid electrolyte, respectively, a fuel electrode current collector and an air electrode current collector outside the fuel electrode layer and the air electrode layer, respectively, and separators outside the fuel electrode current collector and the air electrode current collector. In a first embodiment, a fuel gas and an oxidant gas are supplied from the separators to the fuel electrode layer and the oxidant electrode layer, respectively, through the fuel electrode current collector and the air electrode current collector, respectively. Each separator is formed by laminating a plurality of thin metal plates at least including a thin metal plate in which a first gas discharge opening is arranged in a central part and second gas discharge openings are circularly arranged in a peripheral part, and a thin metal plate with an indented surface. Gases discharged from the separators can be supplied to entire areas of the electrode layers through the current collectors, so that electric power generation can be performed. | 04-16-2009 |
| 20090098436 | POWER GENERATION CELL FOR SOLID ELECTROLYTE FUEL CELL - Provided is a power generation cell for a solid electrolyte fuel cell, in which a lanthanum gallate-based electrolyte is used as a solid electrolyte. Use of alternative energy for replacing petroleum can be promoted and it is possible to use waste heat using the solid electrolyte fuel cell, thus the solid electrolyte fuel cell is watched in views of resource nursing and the environment. The power generation cell is typically operated at 800 to 1000° C. However, currently, the power generation cell, which is operated at 600 to 800° C. by using the lanthanum gallate-based electrolyte, is suggested. Since a current power generation cell has a large size and has an insufficient output, there are demands for size reduction and high output. In the power generation cell, Sm-doped ceria particles are separately attached to a surface of porous nickel having a network frame structure. The demands are satisfied by using the anode. | 04-16-2009 |
| 20090169970 | Solid oxide fuel cell and separator - A solid oxide fuel cell is formed by arranging a fuel electrode layer and an air electrode layer on both surfaces of a solid electrolyte, respectively, a fuel electrode current collector and an air electrode current collector outside the fuel electrode layer and the air electrode layer, respectively, and separators ( | 07-02-2009 |
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| 20090315065 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - Provided are a nitride semiconductor light-emitting diode including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and a nitride semiconductor active layer set between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, and having a first transparent electrode layer containing indium tin oxide and a second transparent electrode layer containing tin oxide on a surface of the p-type nitride semiconductor layer opposite to the side provided with the nitride semiconductor active layer and a method of manufacturing the nitride semiconductor light-emitting diode. | 12-24-2009 |
| 20100252844 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE - A nitride semiconductor light emitting diode includes at least an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer. The active layer is formed of one first nitride semiconductor layer having a highest In ratio in the light emitting diode. The light emitting diode further includes at least one of a second nitride semiconductor layer located between the active layer and the n-type nitride semiconductor layer and including an InGaN layer, and a third nitride semiconductor layer located between the active layer and the p-type nitride semiconductor layer and including an InGaN layer. Respective In (Indium) ratios of the InGaN layers included in the second nitride semiconductor layer and the InGaN layers included in the third nitride semiconductor layer are lower than the In ratio of the first nitride semiconductor layer forming the active layer. The LED with high luminous efficiency can thus be provided. | 10-07-2010 |
| 20110049544 | NITRIDE SEMICONDUCTOR ELEMENT, METHODS FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR LAYER, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - Described herein is a method for manufacturing a nitride semiconductor layer by stacking, on a silicon nitride layer, the first nitride semiconductor layer having a surface inclined with respect to the surface of the silicon nitride layer and then stacking the second nitride semiconductor layer on the first nitride semiconductor layer, a nitride semiconductor element and a nitride semiconductor light-emitting element each including the nitride semiconductor layer; and a method for manufacturing the nitride semiconductor element. | 03-03-2011 |
| 20110127539 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device includes an n type nitride semiconductor layer, a light-emitting layer formed on the n type nitride semiconductor layer, a first p type nitride semiconductor layer formed on the light-emitting layer, an intermediate layer formed on the first p type nitride semiconductor layer to alternately cover and expose a surface of the first p type nitride semiconductor layer, and a second p type nitride semiconductor layer formed on the intermediate layer. The intermediate layer is made of a compound containing Si and N as constituent elements. | 06-02-2011 |
| 20120112159 | NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - A nitride semiconductor light emitting element includes: an n type nitride semiconductor layer formed on a substrate; a light emitting layer formed on the n type nitride semiconductor layer; and a p type nitride semiconductor layer formed on the light emitting layer. The n type nitride semiconductor layer is constituted by one layer or two or more stacked layers. At least one layer constituting the n type nitride semiconductor layer contains Si and Sn as n type dopants and contains In as an isoelectronic dopant. | 05-10-2012 |
| 20120273758 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE DEVICE - A nitride semiconductor light-emitting diode device includes an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer provided between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, while the active layer has a multiple quantum well structure including a quantum well layer and a barrier layer in contact with the p-type semiconductor layer, the barrier layer consists of a two-layer structure of an AlGaN layer and a GaN layer, and the AlGaN layer included in the barrier layer is in contact with a side of the quantum well layer closer to the p-type nitride semiconductor layer | 11-01-2012 |
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| 20080217646 | Nitride semiconductor light emitting device - The present invention presents a nitride semiconductor light emitting device including a substrate, a first n-type nitride semiconductor layer, a light emitting layer, a p-type nitride semiconductor layer, a p-type nitride semiconductor tunnel junction layer, an n-type nitride semiconductor tunnel junction layer, and a second n-type semiconductor layer, in which the p-type and n-type nitride semiconductor tunnel junction layers form a tunnel junction, at least one of the p-type and n-type nitride semiconductor tunnel junction layers contains In, at least one of In-containing layers contacts with a layer having a larger band gap than the In-containing layer, and at least one of shortest distances between an interface of the In-containing layer and the layer having a larger band gap and an interface of the p-type and n-type nitride semiconductor tunnel junction layers is less than 40 nm. | 09-11-2008 |
| 20080237571 | Semiconductor light emitting device and nitride semiconductor light emitting device - The present invention is a semiconductor light emitting device including an n-type semiconductor layer, an active layer, a first p-type semiconductor layer between the n-type semiconductor layer and the active layer, and a second p-type semiconductor layer on the opposite side of the first p-type semiconductor layer from the active layer. Further, the present invention is a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a nitride semiconductor active layer, a first p-type nitride semiconductor layer between the n-type nitride semiconductor layer and the nitride semiconductor active layer, and a second p-type nitride semiconductor layer on the opposite side of the first p-type nitride semiconductor layer from the nitride semiconductor active layer. | 10-02-2008 |
