| Patent application number | Description | Published |
|---|
| 20080198668 | NONVOLATILE SEMICONDUCTOR MEMORY AND DRIVING METHOD THEREOF - A nonvolatile semiconductor memory according to an aspect of the invention comprises a plurality of serially connected memory cells arranged on a P-well area within a semiconductor substrate, select gate transistors connected to one end and the other of the serially connected memory cells, a P-well control circuit which controls the P-well area, a plurality of word lines connected to the plurality of memory cells, a row control circuit which controls the plurality of word lines, and an operation control circuit which controls the P-well control circuit and the row control circuit, wherein, when writing to a selected one of the plurality of memory cells, the operation control circuit controls the P-well control circuit to apply a precharge potential to the P-well area and thus precharge channel areas of the plurality of memory cells. | 08-21-2008 |
| 20080304324 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WHICH REALIZES "1" WRITE OPERATION BY BOOSTING CHANNEL POTENTIAL - A nonvolatile semiconductor memory device includes a memory cell array having a plurality of cell units each including a preset number of memory cells and select gate transistors on drain and source sides. The nonvolatile semiconductor memory device includes a voltage control circuit to prevent occurrence of an erroneous write operation due to excessively high boost voltage of a channel when “1” is written into the memory cell. | 12-11-2008 |
| 20090149011 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND PROCESS OF MANUFACTURING THE SAME - In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film. | 06-11-2009 |
| 20090184390 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device is disclosed, which includes a semiconductor substrate including a device region and an isolation region having an isolation trench, a gate electrode formed on the device region through a gate insulating film, a first isolation insulating film formed in the isolation trench, the first isolation insulating film having a recess, a second isolation insulating film formed on the first isolation insulating film to be filled in the recess, the second isolation insulating film having an upper surface higher than the upper surface of the semiconductor substrate, and an impurity region formed in the semiconductor substrate under the first isolation insulating film, the impurity region having a conductivity type the same as a conductivity type of the semiconductor substrate, an impurity concentration higher than an impurity concentration of the semiconductor substrate, and a width of the impurity region smaller than a width of the isolation trench. | 07-23-2009 |
| 20090268521 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - A non-volatile semiconductor memory device includes a non-volatile memory having a plurality of blocks each including a plurality of memory cells, a bit line electrically connected to one end of a current path of the memory cell, a source line electrically connected to the other end of the current path of the memory cell, a word line electrically connected to the gate electrode, a sense amplifier circuit electrically connected to the bit line and configured to read data from the memory cell, a row decoder electrically connected to the word line and configured to apply a read voltage at which the memory cell is set to an ON state to the word line, and a controller configured to measure a cell current flowing through the memory cell in the ON state to judge whether the memory cell has been degraded. | 10-29-2009 |
| 20100230739 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND PROCESS OF MANUFACTURING THE SAME - In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film. | 09-16-2010 |
| 20100232230 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - When data is written to a memory cell transistor, a write controller controls in such a manner that a verification operation subsequent to a program operation is carried out while a program voltage is increased stepwise for each program operation. The write controller controls in such a manner that a verification operation subsequent to a program operation by which a threshold voltage of a memory cell transistor to be written has become equal to or higher than a verification level for the first time is carried out twice or more at the same verification level, verification operations of the second and subsequent times are carried out after a second program operation which is carried out with the memory cell transistor set in an unselected state. | 09-16-2010 |
| 20110007572 | NAND FLASH MEMORY - A NAND flash memory has memory cell transistors which data is written into. If number of times the program operation has been executed is not equal to the prescribed upper limit number of times, then the program voltage is set so as to be raised by a first potential difference and then the program operation and the verify operation are executed again, and | 01-13-2011 |
