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Koji Tsunekawa
Koji Tsunekawa, Hachiooji-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110094875 | MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION OF THE SAME - A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure. | 04-28-2011 |
Koji Tsunekawa, Kawasaki-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090148595 | Method of Manufacturing Magnetoresistance Effect Element and Apparatus for Manufacturing the Same - A method of manufacturing a magnetoresistance effect element having a high MR ratio even with a low RA and an apparatus of the same are provided. The magnetoresistance effect element having an MgO (magnesium oxide) layer provided between a ferromagnetic layer and a second ferromagnetic layer is manufactured by forming a film of the MgO layer in a film forming chamber in which a substance whose getter effect with respect to the oxidizing gas such as oxygen or water is large is adhered to the surfaces of components (an inner wall | 06-11-2009 |
| 20100178528 | TUNNEL MAGNETORESISTIVE THIN FILM AND MAGNETIC MULTILAYER FILM FORMATION APPARATUS - A tunnel magnetoresistive thin film which can simultaneously realize a high MR ratio and low magnetostriction is provided. | 07-15-2010 |
| 20100310902 | DRY ETCHING METHOD, MAGNETO-RESISTIVE ELEMENT, AND METHOD AND APPARATUS FOR MANUFACTURING THE SAME - In a method of manufacturing a magneto-resistance element having a multi-layer film including magnetic layers, TaO | 12-09-2010 |
| 20110042209 | SPUTTERING APPARATUS AND RECORDING MEDIUM FOR RECORDING CONTROL PROGRAM THEREOF - Disclosed is a sputtering device wherein a target ( | 02-24-2011 |
| 20110143460 | METHOD OF MANUFACTURING MAGNETORESISTANCE ELEMENT AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD - An embodiment of the invention provides a method of manufacturing a magnetoresistance element with an MR ratio higher than that of the related art. | 06-16-2011 |
Koji Tsunekawa, Hachioji-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080217289 | MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION THEREOF - A method of production of a magnetoresistance effect device is able to prevent or minimize a drop in the MR ratio and maintain the high performance of the magnetoresistance effect device even if forming an oxide layer as a surface-most layer constituting a protective layer by the oxidation process inevitably included in the process of production of microprocessing by dry etching performed in a vacuum. Two mask layers used for microprocessing are doubly piled up. This method of production of a magnetoresistivity effect device including a magnetic multilayer film including at least two magnetic layers includes a step of providing under a first mask material that is a nonorganic material a second mask material able to react with other atoms to form a conductive substance, and a device made according to the method. | 09-11-2008 |
| 20080278865 | MAGNETRORESISTIVE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MAGNETIC MULTILAYERED FILM MANUFACTURING APPARATUS - A magnetoresistive element includes an antiferromagnetic layer formed from a layer containing manganese, a layered magnetization fixed layer which includes a first magnetization fixed layer located over a side of the antiferromagnetic layer and formed from a layer containing a ferromagnetic material and a platinum group metal, a second magnetization fixed layer formed from a layer containing a ferromagnetic material, and a first nonmagnetic intermediate layer located between the first magnetization fixed layer and the second magnetization fixed layer, a magnetic free layer formed from a layer containing a ferromagnetic material, and a second nonmagnetic intermediate layer located between the layered magnetization fixed layer and the magnetic free layer. | 11-13-2008 |
| 20090032056 | CONTAMINANT REMOVING METHOD, CONTAMINANT REMOVING MECHANISM, AND VACUUM THIN FILM FORMATION PROCESSING APPARATUS - A contaminant removing method of this invention has a step of emitting, in a vacuum, a directional beam to at least one of the lower surface edge and circumferential surface of a substrate to be processed having a thin film formed on its upper surface. | 02-05-2009 |
| 20100328997 | PHASE-CHANGE MEMORY ELEMENT, PHASE-CHANGE MEMORY CELL, VACUUM PROCESSING APPARATUS, AND PHASE-CHANGE MEMORY ELEMENT MANUFACTURING METHOD - A phase-change memory element includes a perovskite layer formed by a material having a perovskite structure, and a phase-change recording material layer which is formed on the perovskite layer, and changes the phase to a crystal state or amorphous state when supplied with an electric current via the perovskite layer. | 12-30-2010 |
Koji Tsunekawa, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20100033878 | TUNNEL MAGNETORESISTIVE THIN FILM AND MAGNETIC MULTILAYER FORMATION APPARATUS - The present invention provides a tunnel magnetoresistive thin film having a high MR ratio by improving heat resistance while maintaining a thin film of a Ru layer used as a non-magnetic layer so that the Ru layer expresses preferable exchange coupling magnetic field even through annealing at high temperature. | 02-11-2010 |