Patent application number | Description | Published |
20110107948 | BIOMASS-MIXED-FIRING PULVERIZED COAL FIRED BOILER AND OPERATION METHOD OF THE BOILER - A biomass-mixed-firing pulverized coal fired boiler includes: a furnace for burning biomass fuel together with pulverized coal in a mixed state; a pulverized coal burner for supplying the pulverized coal into the furnace; a biomass burner for supplying the biomass fuel into the furnace; a biomass mill for milling the biomass fuel to be supplied to the biomass burner; a dry clinker processing unit provided below the furnace and including a clinker conveyor for carrying ashes discharged from the furnace at a furnace bottom; and a combustion-air supply unit for supplying combustion air toward the ashes discharged at the furnace bottom on the clinker conveyor, thereby to burn an unburned component of the biomass fuel contained in the ashes discharged at the furnace bottom on the clinker conveyor. | 05-12-2011 |
20110147834 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes a semiconductor substrate, an impurity region in the semiconductor substrate, and a conductive layer contacting a top surface of the impurity region and at least a side surface of the impurity region. | 06-23-2011 |
20110204438 | SEMICONDUCTOR DEVICE - A semiconductor device may include, but is not limited to: a semiconductor substrate; a first insulating film; a second insulating film; a first gate electrode; a second gate electrode; and a first semiconductor region. The semiconductor substrate has first and second grooves crossing each other in plan view. The first insulating film covers an inner surface of the first groove. The second insulating film covers an inner surface of the second groove. The first gate electrode fills at least a bottom portion of the first groove. The second gate electrode fills at least a bottom portion of the second groove. The first semiconductor region is positioned in the semiconductor substrate. The first semiconductor region contains a first impurity. The first semiconductor region is adjacent to a first portion of the second insulating film. The first portion of the second insulating film covers at least a bottom region of the second groove. | 08-25-2011 |
20120086060 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device includes a semiconductor substrate, a gate electrode, a dummy gate electrode, and a first impurity diffusion region. The semiconductor substrate has first and second grooves. The gate electrode is in the first groove. The dummy gate electrode is in the second groove. The dummy gate electrode has a first top surface. The first impurity diffusion region in the semiconductor substrate is positioned between the first and second grooves. The first top surface is positioned at a lower level than a bottom of the first impurity diffusion region. | 04-12-2012 |
20120086063 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate having a memory cell region and a peripheral circuit region; a bit line extending over the memory cell region and the peripheral circuit region, the bit line including a first portion in the peripheral circuit region; and a sense amplifier in the peripheral circuit region. The sense amplifier includes a transistor having a gate electrode which includes the first portion of the bit line. | 04-12-2012 |
20120273859 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device may include, but is not limited to, a semiconductor substrate having a first gate groove; a first fin structure underneath the first gate groove; a first diffusion region in the semiconductor substrate, the first diffusion region covering an upper portion of a first side of the first gate groove; and a second diffusion region in the semiconductor substrate. The second diffusion region covers a second side of the first gate groove. The second diffusion region has a bottom which is deeper than a top of the first fin structure. | 11-01-2012 |
20130164909 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming an insulating isolation portion in a groove of a substrate, forming a projection portion in which an upper portion of the insulating isolation portion projects from a principal surface of the substrate, forming a sidewall spacer covering a side surface of the projection portion and part of the principal surface of the substrate along the side surface of the projection portion, and forming a first trench in the substrate by etching the substrate using the sidewall spacer as a mask. | 06-27-2013 |
20140117440 | SEMICONDUCTOR DEVICE WITH IMPURITY REGION WITH INCREASED CONTACT AREA - A semiconductor device includes a semiconductor substrate, an impurity region in the semiconductor substrate, and a conductive layer contacting a top surface of the impurity region and at least a side surface of the impurity region. | 05-01-2014 |