| Patent application number | Description | Published |
|---|
| 20080203565 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The semiconductor device | 08-28-2008 |
| 20090273092 | SEMICONDUCTOR MODULE HAVING AN INTERCONNECTION STRUCTURE - In a method for manufacturing a semiconductor module, a metal layer is formed on a support substrate. Then, first conductive posts and a first insulating layer are formed on the metal layer. The first insulating layer surrounds the sides of the first conductive posts. Then, second conductive posts are formed above the first conductive posts. The second conductive posts are electrically connected to the first conductive posts. Then, a second insulating layer is formed so as to cover the second conductive posts. The second insulating layer is made of adhesive resin. Finally, a semiconductor device is adhered to the second conductive posts by the second insulating layer while a gap between the first semiconductor device and the first insulating layer is sealed by the second insulating layer. | 11-05-2009 |
| 20100048019 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device | 02-25-2010 |
| 20100087058 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first electronic circuit component and a second electronic circuit component are electrically connected to an electro-conductive member via a first solder and a second solder, respectively. The electro-conductive member is formed in a resin film. The electro-conductive member is configured as containing a second diffusion barrier metal film. The second diffusion barrier metal film prevents diffusion of the second solder. Between the electro-conductive member and the first solder, a first diffusion barrier metal film is provided. The first diffusion barrier metal film prevents diffusion of the first solder. On the first surface of the resin film and on the electro-conductive member, an adhesive metal film is formed so as to contact with the resin film and the electro-conductive member. The adhesive metal film has stronger adhesiveness to the resin film than either of those of the first solder and the first diffusion barrier metal film. | 04-08-2010 |
| 20100127405 | WIRING BOAD, SEMICONDUCTOR DEVICE IN WHICH WIRING BOARD IS USED, AND METHOD FOR MANUFATURING THE SAME - A wiring board comprising a first surface on which a first electrode is disposed and a second surface on which a second electrode is disposed; at least a single insulation layer and at least a single wiring layer; and one or a plurality of mounted semiconductor elements, wherein the second electrode disposed on the second surface is embedded in the insulation layer, the surface on the opposite side of the exposed surface on the second surface side of the second electrode is connected to the wiring layer, and all or part of the side surface of the second electrode does not make contact with the insulation layer. | 05-27-2010 |
| 20100144091 | Semiconductor device and method of manufacturing the same - A method of manufacturing a semiconductor device includes forming an interconnect member, mounting a first semiconductor chip having a semiconductor substrate in a face-down manner on the interconnect member, forming a resin layer on the interconnect member to cover a side surface of the first semiconductor chip, thinning the first semiconductor chip and the resin layer, forming an inorganic insulating layer on a back surface of the first semiconductor chip so as to be in contact with the back surface and to extend over the resin layer, and forming a through electrode so as to penetrate the inorganic insulating layer and the semiconductor substrate. | 06-10-2010 |
| 20100297811 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing according to an embodiment of the present invention includes forming a seed metal layer | 11-25-2010 |
| 20110075389 | WIRING BOARD, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME - A semiconductor device comprising a flat wiring board, a first LSI disposed on one surface of the wiring board, a sealing resin for covering the one surface and a side face of the first semiconductor element, and a second LSI disposed on another surface of the wiring board. The wiring board has conductive wiring as a wiring layer, an insulation resin as a support layer for the wiring layer, and a conductive through-hole that passes through the wiring layer and the support layer. Connection points between lands disposed in positions in which the external peripheral edges of the semiconductor elements transverse the interior of the lands as viewed vertically from above, which lands are selected from land portions on which the external connection terminals are formed, and the wiring board formed in the same plane as the lands, are unevenly distributed toward one side of the wiring board. Connections for very small wiring are thereby made possible, and a plurality of semiconductor elements can be very densely connected. | 03-31-2011 |
| 20110101541 | SEMICONDUCTOR DEVICE - A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device | 05-05-2011 |
| 20110121445 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a plural number of interconnects and a plural number of vias are stacked. A semiconductor element is enclosed in an insulation layer. At least one of the vias provided in insulation layers and/or at least one of interconnects provided in the interconnect layers are of cross-sectional shapes different from those of the vias formed in another one of the insulation layers and/or interconnects provided in another one of the interconnect layers. | 05-26-2011 |
| 20110147058 | ELECTRONIC DEVICE AND METHOD OF MANUFACTURING ELECTRONIC DEVICE - A multilayer wiring substrate has a configuration in which a first wiring layer including a plurality of first conductive members formed in a first insulating film, and formed to be exposed at a second surface side, and a second wiring layer including a plurality of second conductive members formed in a second insulating film which is formed on a first surface side on the side opposite to the second surface are laminated. The plurality of second conductive members is respectively connected directly to any of the plurality of first conductive members or connected through a different conductive material. The plurality of first conductive members is connected directly to any of the plurality of second conductive members or connected through a different conductive material, but includes dummy conductive members which do not form current pathways connecting with connected second conductive member. | 06-23-2011 |
