| Patent application number | Description | Published |
|---|
| 20080206999 | METHOD FOR WET ETCHING WHILE FORMING INTERCONNECT TRENCH IN INSULATING FILM - A wet etching method that includes forming an insulating film on a substrate, and irradiating laser light to the insulating film during wet etching of the insulating film using an etching solution. | 08-28-2008 |
| 20080220223 | RESIST COVER FILM FORMING MATERIAL, RESIST PATTERN FORMING METHOD, AND ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - To provide a material including: a silicon-containing polymer having at least an alkali-soluble group and is represented by the following general formula (1); and an organic solvent capable of dissolving the silicon-containing polymer. | 09-11-2008 |
| 20080274431 | Resist pattern swelling material, and method for patterning using same - To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents. | 11-06-2008 |
| 20090061359 | RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - According to an aspect of an embodiment, a resist composition for immersion exposure includes a matrix resin so that the matrix resin is turned alkali-soluble by an acid. The resist composition further includes a resin having a side chain containing silicon, the resin being capable of being turned alkali-soluble by an acid, the content of the silicon with respect to the total amount of the matrix resin and the resin being 1% by mass or less. | 03-05-2009 |
| 20090191485 | MONOMER, RESIN, RESIST COMPOSITION USING THE RESIN, AND METHOD PRODUCING SEMICONDUCTOR DEVICE USING THE RESIST COMPOSITION - A monomer, which is represented by General Formula I: | 07-30-2009 |
| 20100227275 | THIOPYRAN DERIVATIVE, POLYMER, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SUCH RESIST COMPOSITION - To provide a thiopyran derivative, having a structure expressed by the following general formula 1: | 09-09-2010 |
| 20100227278 | MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE - A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask. | 09-09-2010 |
| 20100248154 | THIOPYRAN DERIVATIVE, POLYMER, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SUCH RESIST COMPOSITION - To provide a thiopyran derivative, having a structure expressed by the following general formula 1: | 09-30-2010 |
| 20100305248 | RESIST PATTERN THICKENING MATERIAL AND PROCESS FOR FORMING RESIST PATTERN, AND SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME - The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern. | 12-02-2010 |
| 20110076620 | DITHIANE DERIVATIVE, POLYMER, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SUCH RESIST COMPOSITION - To provide a dithiane derivative, having a structure expressed by the following general formula 1: | 03-31-2011 |
| 20110101508 | RESIST PATTERN THICKENING MATERIAL, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD THEREOF - A resist pattern thickening material containing a resin, a cyclic compound expressed by the general formula 1, at least one of compounds expressed by the general formulae 2 to 3, respectively, and water: | 05-05-2011 |
