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Koji Nakayama
Koji Nakayama, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090131609 | Episulfide Group-Substituted Silicon Compound and Thermosetting Resin Composition Containing Same - Disclosed is an episulfide group-substituted silicon compound (A) having a backbone structure represented by the following formula (1). | 05-21-2009 |
| 20100106698 | USER TERMINAL DEVICE AND METHOD FOR CONTROLLING THE SAME - A method is provided that automatically saves data on a user terminal of a thin client system to a file server or to the user terminal by appropriately and efficiently sorting the data. System update data such as a patch for the user terminal and confidential data that should be saved to the server are distinguished when written to a secondary storage device, and separately cached into memory. Then, the confidential data that should be saved to the server is automatically uploaded to the file server at any given timing, for example, at shut-down of the terminal, whereby a minimum amount of data can be efficiently saved to the file server. | 04-29-2010 |
| 20100250852 | USER TERMINAL APPARATUS AND CONTROL METHOD THEREOF, AS WELL AS PROGRAM - A user terminal apparatus and a control method therefor, which constitutes part of a thin client system which transfers data to a file server and stores the data therein. The system aggregates user data in a file server by controlling writing into a secondary storage device of the user terminal and controlling writing out to an external storage medium, to prevent loss and leakage of confidential information. | 09-30-2010 |
| 20110039721 | METHOD FOR PREDICTION ABOUT CARCINOGENICITY OF SUBSTANCE IN RODENT - Disclosed is a method for predicting about the carcinogenicity of a substance of interest in a rodent, which comprises the steps of: administering a solution of the substance to a test group and administering a solvent used in the solution to a control group; extracting mRNA from each of the test group and the control group, and measuring the expression level of mRNA for each of genes obtained by selecting at least one gene from (A) genes each comprising a nucleotide sequence depicted in any one of SEQ ID NOs: 1 to 5, (B) genes each comprising a nucleotide sequence depicted in any one of SEQ ID NOs: 6 to 8 and (C) genes each comprising a nucleotide sequence depicted in any one of SEQ ID NOs: 9 to 32; determining whether or not a significant difference in the level of mRNA expressed from the gene is observed between the test group and the control group; and determining that the substance has carcinogenicity when a significant difference in the level of the expression of mRNA from any one of the genes is observed between the test group and the control group and the direction of increase or decrease in the level of the expression of mRNA from any one of the genes is the same as the tendency which is previously defined for each gene. | 02-17-2011 |
Koji Nakayama, Osaka-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100258817 | Silicon carbide semiconductor device and manufacturing method therefor - With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate. | 10-14-2010 |
| 20100261333 | Silicon carbide semiconductor device and manufacturing method therefor - With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate. | 10-14-2010 |
Koji Nakayama, Amagasaki-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100032686 | Bipolar Semiconductor Device, Method for Producing the Same, and Method for Controlling Zener Voltage - Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named. | 02-11-2010 |
| 20100084663 | Silicon Carbide Zener Diode - A silicon carbide Zener diode is a bipolar semiconductor device that has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, formed thereon, a silicon carbide conductive layer of a first conductivity type, and a silicon carbide conductive layer of a second conductivity type formed on the silicon carbide conductive layer of a first conductivity type, wherein a depletion layer that is formed under reverse bias at a junction between the silicon carbide conductive layer of a first conductivity type and the silicon carbide conductive layer of a second conductivity type does not reach a mesa corner formed in the silicon carbide conductive layer of a first conductivity type. | 04-08-2010 |
Koji Nakayama, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20090045413 | Silicon Carbide Bipolar Semiconductor Device - In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage. In another embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide conductive layer of a second conductive type, and a metal layer that is equipotential during the application of a reverse voltage is formed on a surface of the silicon carbide conductive layer. In still another embodiment, the forward-operation degradation preventing layer is composed of a high resistance amorphous layer. | 02-19-2009 |
| 20090195296 | Method for Recovering an On-State Forward Voltage and, Shrinking Stacking Faults in Bipolar Semiconductor Devices, and the Bipolar Semiconductor Devices - In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time of on-state forward bias operation; an on-state forward voltage increased in a silicon carbide bipolar semiconductor device is recovered by shrinking the stacking fault area enlarged by on-state forward bias operation. In a method of this invention, the bipolar semiconductor device in which the stacking fault area enlarged and the on-state forward voltage has been increased by on-state forward bias operation, is heated at a temperature of higher than 350° C. | 08-06-2009 |
| 20090317983 | Process for Producing Silicon Carbide Semiconductor Device - In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is the reduction of defects which are the nuclei of a stacking fault which is expanded by current passage, thereby suppressing the increase of the forward voltage of the bipolar silicon carbide semiconductor device. In a method for producing a bipolar silicon carbide semiconductor device, the device is subjected to a thermal treatment at a temperature of 300° C. or higher in the final step of production. Preferably, the above-mentioned thermal treatment is carried out after the formation of electrodes and then the resulting bipolar silicon carbide semiconductor device is mounted in a package. | 12-24-2009 |
Koji Nakayama, Ibaraki JP
| Patent application number | Description | Published |
|---|---|---|
| 20090134028 | Method of Estimating Effect of Test Chemical on Living Organisms - A method of predicting an effect of a test chemical on living organisms, which comprises: | 05-28-2009 |
Koji Nakayama, Seki-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080238959 | Image Recording Apparatus - An image recording apparatus improves the operating efficiency while preventing trouble due to the contact of a recording medium with a discharging surface of a recording head. A distance sensor for detecting the distance of the leading edge of a sheet from a conveying surface is provided upstream from the inkjet head in the conveying direction of the sheet. A gap control unit controls a frame moving mechanism to move the inkjet head up so that a gap between the discharging surface and the conveying surface increases when the distance detected by the distance sensor is above a first distance, and the gap distance may be increased by different amounts depending on the distance detected by the distance sensor. A discharging control unit controls the inkjet head to discharge ink droplets after the gap is increased. | 10-02-2008 |
| 20080239049 | Image Recording Apparatus - An image recording apparatus includes a recording head that records an image on a record medium, a first and a second rollers respectively having rotation shafts parallel to each other, and an endless conveyor belt which is looped around the first and second rollers, and which has an external surface for conveying thereon a record medium in a conveyance direction from the first roller toward the second roller while supporting the record medium. On the circumferential surface of the second roller, provided are a abutting region abutting the internal surface of the conveyor belt, and a larger diameter region not abutting the internal surface of the conveyor belt and having a radius surpassing a sum of a thickness of the conveyor belt and a radius of the abutting region. | 10-02-2008 |
Koji Nakayama, Kanazawa-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080218678 | LIQUID CRYSTAL DISPLAY DEVICE - A power supply wiring which is disposed on an array substrate and supplies a predetermined potential to a counter-electrode, includes a power supply pad which is included in a third electrically conductive layer, a first wiring which is included in a first electrically conductive layer and is electrically connected to the power supply pad, a second wiring which is included in a second electrically conductive layer, and a bridge wiring which is included in the third electrically conductive layer and electrically connects the first wiring and the second wiring, the power supply wiring being electrically connected to the counter-electrode via an electrically conductive member which is disposed on the power supply pad. | 09-11-2008 |
Koji Nakayama, Hiroshima JP
| Patent application number | Description | Published |
|---|---|---|
| 20110135550 | CO2 RECOVERY SYSTEM AND CO2 RECOVERY METHOD - [Object] To further reduce the concentrations of basic amine compounds remaining in decarbonated flue gas. | 06-09-2011 |
| 20110158891 | CO2 RECOVERY SYSTEM AND CO2 RECOVERY METHOD - To further reduce the concentrations of basic amine compounds remaining in decarbonated flue gas. | 06-30-2011 |