| Patent application number | Description | Published |
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| 20080304342 | SEMICONDUCTOR MEMORY DEVICE WITH REDUNDANCY CIRUIT - A semiconductor device has a memory cell, decoders, a redundancy circuit and a mode setting circuit. The memory cell array has word lines including a redundant word line, bit lines and memory cells. A row decoder selects the word lines in response to a row address. Further, the row address decoder selects the redundant word line when a replacement signal is received. A column decoder selects the bit lines in response to a column address. A row address redundancy circuit stores a redundant row address. The row address redundancy circuit provides the replacement signal when the redundant row address corresponds to the received address. The mode setting circuit receives a mode signal having a normal mode and a test mode. The mode setting circuit outputs the replacement signal to the row decoder when the mode signal is in the normal mode, and prohibits an output of the replacement signal. | 12-11-2008 |
| 20090016127 | DUTY DETECTION CIRCUIT, DLL CIRCUIT USING THE SAME, SEMICONDUCTOR MEMORY CIRCUIT, AND DATA PROCESSING SYSTEM - A duty detection circuit includes discharge transistors, charge transistors, detection lines, and a comparator circuit that detects a potential difference of these detection lines, and also includes a gate circuit that controls the discharge transistors and the charge transistors in response to the internal clock signal of an even cycle. As a result, the detection lines are charged and discharged in response to the internal clock signal of the even cycle. Consequently, the duty detection circuit can be applied to a multi-phase DLL circuit, and a potential difference appearing in the detection line can be sufficiently secured. | 01-15-2009 |
| 20090039930 | DLL CIRCUIT, SEMICONDUCTOR MEMORY DEVICE USING THE SAME, AND DATA PROCESSING SYSTEM - A DLL circuit includes a delay line (CDL) ( | 02-12-2009 |
| 20090289679 | Duty correction circuit - A duty correction circuit is formed using at least one delay circuit, which is constituted of a first inverter including three transistors of different conduction types and a second inverter including three other transistors of different conduction types and which delays and adjusts an input clock signal at the leading-edge/trailing-edge timing so as to convert it into an output clock signal based on a first or second bias voltage produced by a bias circuit detecting the duty ratio of the output clock signal. The duty correction circuit decreases the high-level period of the output clock signal having a high duty ratio based on the first bias voltage. Alternatively, the duty correction circuit increases the high-level period of the output clock signal having a low duty ratio based on the second bias voltage. | 11-26-2009 |
| 20100165769 | SEMICONDUCTOR MEMORY DEVICE HAVING AUTO-PRECHARGE FUNCTION - To provide a semiconductor memory device including: a first clock generation circuit and a second clock generation circuit that generate a first internal clock and a second internal clock, respectively; a latency counter that counts latency synchronously with the first internal clock; and a recovery counter that counts a write recovery period synchronously with the second internal clock. The second clock generation circuit activates the second internal clock when auto-precharge is designated, and deactivates the second internal clock when the auto-precharge is not designated. With this configuration, the recovery counter does not perform any counting operation when an auto-precharge function is not operated, and thus unnecessary power consumption can be prevented. | 07-01-2010 |
| 20110050304 | SEMICONDUCTOR APPARATUS - In a semiconductor device, there are provided first to third pairs of nMOS transistors between a GND and two sense nodes and first to third pairs of pMOS transistors between the two sense nodes and the power supply. A first internal clock signal and its inverted signal are supplied to gates of the first pair of nMOS transistors and the second pair of nMOS transistors, respectively. Complementary external clock signals are supplied to the gates of the third pairs of nMOS transistors and the third pairs of pMOS transistors. An inverted version of a second internal clock signal and the second internal clock signal are supplied to gates of the first and second pairs of pMOS transistors. The two sense nodes are connected to inputs of a differential amplifier. The output of the differential amplifier is latched by a latch circuit. Also provided an equalizing circuit precharging/equalizing the two sense nodes (FIG. | 03-03-2011 |
| 20110298290 | SEMICONDUCTOR DEVICE - In one embodiment, to maintain the operation stability of a semiconductor device even when an external voltage changes. An input signal discrimination unit operates with a power supply potential supplied from a first power supply line VDDI. The input signal discrimination unit compares an input signal VIN with a reference potential Vref. The comparison result is inverted into a signal V | 12-08-2011 |
| 20110303988 | Semiconductor device and level shift circuit using the same - A level shift circuit includes: a pair of first and second P-channel transistors which are connected in a flip-flop manner and whose sources connected to a first power supply line; a pair of first and second N-channel transistors with the first N-channel transistor provided between the first P-channel transistor and a second power supply line and the second N-channel transistor provided between the second P-channel transistor and the second power supply line, in which input signals complementary to each other are inputted to their gates; and a current supply circuit provided between the first power supply line and a drain of the first N-channel transistor and between the first power supply line and a drain of the second N-channel transistor, respectively. The current supply circuit includes third and fourth N-channel transistors with their sources connected to drains of the first and second N-channel transistors and third and fourth P-channel transistors serving as current limiting elements with their one ends connected to the first power supply line and the other ends connected to drains of the third and fourth P-channel transistors. | 12-15-2011 |
