| Patent application number | Description | Published |
|---|
| 20090122817 | VARIABLE-WAVELENGTH FILTER AND VARIABLE-WAVELENGTH LASER - Only the light at an overlapping wavelength of the transmission characteristics of at least two wavelength selecting filters is looped, and at least one of the wavelength selecting filters varies a selected wavelength. Since a loss due to the optical filters is small and there is not a loss caused by a highly reflecting film, the output of an external-resonator variable-wavelength laser can be increased. Optical circuit component ( | 05-14-2009 |
| 20090141747 | EXTERNAL CAVITY WAVELENGTH TUNABLE LASER DEVICE AND OPTICAL OUTPUT MODULE - In an external cavity wavelength tunable laser device including an external cavity ( | 06-04-2009 |
| 20090257460 | EXTERNAL RESONATOR VARIABLE WAVELENGTH LASER AND ITS PACKAGING METHOD - The reflectance of a semiconductor optical amplifier ( | 10-15-2009 |
| 20090274187 | Semiconductor Laser, Module and Optical Transmitter - A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate. A facet of the semiconductor optical waveguide-A facing an isolation trench and a facet of the semiconductor optical waveguide-B facing the isolation trench are configured as a composite optical reflector/optical connector using an optical interference. The facet of the semiconductor optical waveguide-A achieves an optical reflectivity not higher than the reflectivity corresponding to a cleaved facet and not smaller than several percent, and an optical coupling coefficient of not lower than 50% between the semiconductor optical waveguide-A and the semiconductor optical waveguide-B. | 11-05-2009 |
| 20100111119 | EXTERNAL RESONATOR TYPE WAVELENGTH VARIABLE SEMICONDUCTOR LASER - In an external resonator type semiconductor wavelength tunable laser apparatus using a wavelength tunable mirror or a wavelength tunable filter which uses a refractive index change of liquid crystal, a resonant frequency is set as FR, when a response of the refractive index change to a drive voltage frequency of liquid crystal becomes maximum. A frequency F | 05-06-2010 |
| 20100246618 | EXTERNAL RESONATOR-TYPE WAVELENGTH TUNABLE LASER DEVICE - The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and he (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device. | 09-30-2010 |
| 20110002349 | WAVELENGTH-TUNABLE LASER APPARATUS AND WAVELENGTH CHANGING METHOD THEREOF - An object is to provide a wavelength-tunable laser apparatus that prevents a grid-hopping upon wavelength change, and a wavelength changing method thereof. A wavelength-tunable laser apparatus | 01-06-2011 |
