Patent application number | Description | Published |
20080210959 | Light emitting apparatus - In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface. | 09-04-2008 |
20100120231 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device according to the present invention includes the following step: a step (S | 05-13-2010 |
20100216268 | MANUFACTURING METHOD OF A SEMICONDUCTOR ELEMENT - A method of manufacturing a semiconductor element of good characteristics at a reduced manufacturing cost is provided. The manufacturing method of the semiconductor element includes a GaN-containing semiconductor layer forming step, an electrode layer forming step, a step of forming an Al film on the GaN-containing semiconductor layer, a step of forming a mask layer made of a material of which etching rate is smaller than that of a material of the Al film, a step of forming a ridge portion using the mask layer as a mask, a step of retreating a position of a side wall of the Al film with respect to a position of a side wall of the mask layer, a step of forming, on the side surface of the ridge portion and the top surface of the mask layer, a protective film made of a material of which etching rate is smaller than that of the material forming the Al film, and a step of removing the Al film and thereby removing the mask layer and a portion of the protective film formed on the top surface of the mask layer. | 08-26-2010 |
20100322276 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces | 12-23-2010 |
20110042706 | AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs | 02-24-2011 |
20110049542 | AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs - The present invention makes available Al | 03-03-2011 |
20110062466 | AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs | 03-17-2011 |
20110129997 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device according to the present invention includes the following step: a step (S | 06-02-2011 |
20110164637 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces | 07-07-2011 |
20120058583 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces | 03-08-2012 |