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Koji Hirata
Koji Hirata, Miyagi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100307722 | HEAT TRANSPORT DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method of manufacturing a heat transport device including the steps of stacking a first plate, a capillary member, and a second plate by interposing the capillary member between the first plate and the second plate, the first plate and the second plate constituting a container of a heat transport device configured to transport heat using phase change in a working fluid; and diffusion-bonding the first plate and the second plate while deforming the second plate to create an internal space in the container for storing the capillary member. | 12-09-2010 |
| 20110088877 | HEAT TRANSPORT DEVICE, METHOD OF MANUFACTURING A HEAT TRANSPORT DEVICE, AND ELECTRONIC APPARATUS - A heat transport device includes a working fluid, a capillary member, and a container. The working fluid transports heat by performing a phase change. The capillary member applies a capillary force to the working fluid. The capillary member includes a first mesh member having a mesh of a first size and a second mesh member having a mesh of a second size different from the first size. The second mesh member is folded so that the first mesh member is sandwiched. The container contains the working fluid and the capillary member. | 04-21-2011 |
Koji Hirata, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20110005724 | HEAT TRANSPORT DEVICE MANUFACTURING METHOD AND HEAT TRANSPORT DEVICE - [Object] To provide a heat transport device manufacturing method and a heat transport device that has a high hermeticity and is manufactured without increasing a load applied at a time of performing diffusion bonding. | 01-13-2011 |
Koji Hirata, Aichi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090155580 | Production Methods of Semiconductor Crystal and Semiconductor Substrate - To provide a semiconductor substrate of high quality suitable for fabricating an electronic device or an optical device. The present invention provides a method for producing a semiconductor substrate for an electronic device or an optical device, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal or after completion of growth of the semiconductor crystal. | 06-18-2009 |
| 20100301358 | Semiconductor Substrate, Electronic Device, Optical Device, and Production Methods Therefor - The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal. | 12-02-2010 |
Koji Hirata, Aichi-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20080223288 | Crystal growing apparatus - An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100° C. to 200° C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping. | 09-18-2008 |
| 20080295763 | Apparatus for manufacturing Group III nitride semiconductor and method for manufacturing Group III nitride semiconductor - A Group III nitride semiconductor crystal is grown according to a flux method. After completion of the crystal-growing process, Na is discharged from a crucible by a recovery device when the temperature of the crucible is 100° C. or higher, and is held in a holding vessel in a liquid state. The recovered Na can be drawn from the holding vessel via a faucet. Na remaining after completion of the crystal-growing process does not contain impurities of high vapor pressure, and is thus of high purity. Therefore, reuse, as flux, of the recovered Na enables manufacture of a Group III nitride semiconductor whose concentration of impurities is low. | 12-04-2008 |
| 20080299020 | Apparatus for manufacturing group III nitride semiconductor - An apparatus for manufacturing a Group III nitride semiconductor is composed of a pressure vessel, a reaction vessel disposed within the pressure vessel, a heating device disposed within the pressure vessel so as to heat the reaction vessel, and a glove box filled with argon gas. The pressure vessel and the glove box are connected to each other via a gate valve. By virtue of this configuration, a large-sized reusable reaction vessel can be disposed within the pressure vessel without causing oxidation of Na. | 12-04-2008 |
| 20090106959 | Group III nitride semiconductor manufacturing system - The invention provides a group III nitride semiconductor manufacturing system which is free from interruption to rotation of a rotational shaft. The group III nitride semiconductor manufacturing system has a reacting vessel having an opening, a crucible disposed in an interior of the reaction vessel and containing a melt including at least a group III metal and an alkali metal, a holding unit supporting the crucible and having a rotational shaft extending from the interior of the reaction vessel to an exterior of the reaction vessel through the opening, a rotational shaft cover covering a part of the rotational shaft positioned at the exterior of the reacting vessel and connected to the reacting vessel at the opening, a rotational driving unit disposed at an outside of the reacting vessel and regulating the rotational shaft and a supply pipe connected to the rotational shaft cover and supplying a gas including at least nitrogen into a gap between the rotational shaft and the rotational shaft cover, wherein the gas and the melt react to grow a group III nitride semiconductor crystal. | 04-30-2009 |
| 20090173969 | Semiconductor Device - A semiconductor device having an AlGaN—GaN heterojunction structure including an AlGaN layer and a GaN layer which device exhibits no changes over time in sheet resistance. | 07-09-2009 |
| 20100270548 | Semiconductor element and method of making same - A semiconductor element includes a substrate including gallium oxide and having a predetermined plane direction, and a semiconductor layer formed on the substrate, in which, the semiconductor element is in chip form and further includes a first end face formed along a cleaved surface of the substrate and a second end face formed perpendicular to the first end face, wherein the first end face has a stronger cleavage property than the second end face. | 10-28-2010 |
Koji Hirata, Kasukabe JP
| Patent application number | Description | Published |
|---|---|---|
| 20080297151 | MRI phantom and MRI system - It is intended to provide a Magnetic Resonance Imaging (MRI) phantom for | 12-04-2008 |
| 20090128155 | RF coil and MRI apparatus - An RF coil having at least three different resonance frequencies, wherein one of the resonance frequencies is adjusted to be a frequency f | 05-21-2009 |
| 20100158816 | GAS BUBBLE-GENERATING AGENT - This invention provides a gas bubble-generating agent that can be used as a contrast medium or a blocking agent in vivo. Such gas bubble-generating agent is produced by a method for producing a gas bubble-generating agent comprising the following steps of: (a) preparing a mixed solution of an amphiphilic substance, an amphiphilic substance comprising a water-soluble polymer chemically bound thereto, a hardly water-soluble substance having a boiling point of lower than 60° C. at atmospheric pressure, and a physiologically acceptable isotonic solution; (b) pressurizing the mixed solution; and (c) centrifuging the mixed solution after the step of pressurization, wherein a molar concentration of the amphiphilic substance in the mixed solution prepared in step (a) is 10 times or more higher than that of the amphiphilic substance comprising a water-soluble polymer chemically bound thereto. | 06-24-2010 |
Koji Hirata, Ehime JP
| Patent application number | Description | Published |
|---|---|---|
| 20100079022 | HYDRODYNAMIC BEARING DEVICE, AND SPINDLE MOTOR AND INFORMATION APPARATUS EQUIPPED WITH SAME - With a hydrodynamic bearing device | 04-01-2010 |
Koji Hirata, Yamaguchi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090110943 | Thermoplastic Resin Composition and Composite Molded Product - A thermoplastic resin composition that has high chemical resistance, excellent appearance of a molded product thereof, and, as a surface layer material, good adhesion to a base material resin, particularly a PS resin or its waste resin, and that can provide a composite molded product having excellent processibility (for example, chipping resistance) and high durability (for example, heat-cycle resistance), and a composite molded product including the thermoplastic resin composition as a surface layer material. A thermoplastic resin composition that includes 100 parts by mass of a first vinyl (co)polymer (I) that is produced by (co)polymerization of at least one monomer component selected from the group consisting of aromatic vinyl compounds, vinyl cyanide compounds, and other vinyl monomers copolymerizable with these compounds, and 1 to 100 parts by mass of a vinyl copolymer (II) that is produced by copolymerization of a vinyl cyanide compound and another vinyl monomer copolymerizable with the vinyl cyanide compound and in which the content of the vinyl cyanide compound component in an acetone soluble fraction of the copolymer ranges from 0.1% to 15% by mass. | 04-30-2009 |
Koji Hirata, Honjo-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090050857 | Method of improving the weatherability of copper powder - A copper powder that is excellent in weatherability and adapted for use in conductive paste is provided that contains 10-20,000 ppm, preferably 100-2,000 ppm, of Sn. The copper powder is particularly preferably one having an average particle diameter DM of 0.1-2 μm and, further, one wherein the particle diameter of at least 80% of all particles is in the range of 0.5 DM-1.5 DM. This copper powder can be produced, for example, by precipitating Cu metal by reduction of Cu ions in the presence of Sn ions. | 02-26-2009 |
Koji Hirata, Nishikasugai-Gun JP
| Patent application number | Description | Published |
|---|---|---|
| 20090000538 | SINGLE CRYSTAL GROWING METHOD - In a method of growing a single crystal by melting a raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, the vessel is oscillated and the melted raw material is contacted with an agitation medium made of a solid unreactive with the melted raw material. | 01-01-2009 |
Koji Hirata, Saitama JP
| Patent application number | Description | Published |
|---|---|---|
| 20080297154 | MAGNETIC FIELD COIL AND MAGNETIC RESONANCE IMAGING APPARATUS - Provided is an RF coil which can highly efficiently and uniformly irradiate a RF magnetic field having two or more magnetic resonance frequencies close to each other, and receive magnetic resonance signals of two or more magnetic resonance frequencies close to each other with high sensitivity and uniform sensitivity profile in an MRI apparatus. Two or more frequencies to which the coil is tuned are adjusted so as to be between resonance frequencies of series resonant circuits constituting the RF coil. | 12-04-2008 |
Koji Hirata, Tochigi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110253345 | HEAT TRANSPORTATION DEVICE PRODUCTION METHOD AND HEAT TRANSPORTATION DEVICE - [Object] To provide a low-cost production method for a heat transportation device with which efficient production with a small number of steps is possible. | 10-20-2011 |