| Patent application number | Description | Published |
|---|
| 20080199806 | PATTERNING PROCESS AND RESIST COMPOSITION - A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half. | 08-21-2008 |
| 20080274432 | SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD - A silicon-containing film is formed from a heat curable composition comprising (A-1) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, (A-2) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of a base catalyst, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Ce, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, (D) a cyclic ether-substituted alcohol, and (E) an organic solvent. The silicon-containing film ensures effective pattern formation, effective transfer of a photoresist pattern, and accurate processing of a substrate. | 11-06-2008 |
| 20090011372 | SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD - A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Ce, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, (D) a cyclic ether-substituted alcohol, and (E) an organic solvent. The silicon-containing film ensures effective pattern formation, effective transfer of a photoresist pattern, and accurate processing of a substrate. | 01-08-2009 |
| 20090035699 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS - Fluorinated monomers of formula (1) are useful in producing polymers for the formulation of radiation-sensitive resist compositions. R | 02-05-2009 |
| 20090081588 | RESIST COMPOSITION AND PATTERNING PROCESS - A resist composition comprises a base polymer which changes its alkali solubility under the action of an acid, and an additive copolymer comprising recurring units (a) and (b). R | 03-26-2009 |
| 20090233242 | LACTONE-CONTAINING COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - Lactone-containing compounds having formula (1) are novel wherein R | 09-17-2009 |
| 20090239179 | HYDROXYL-CONTAINING MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A hydroxyl-containing monomer of formula (1) is provided wherein R | 09-24-2009 |
| 20090246694 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS - Photoacid generators generate sulfonic acids of formula ( | 10-01-2009 |
| 20090274984 | CARBOXYL-CONTAINING LACTONE COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - Carboxyl-containing lactone compounds having formula (1) are novel wherein R | 11-05-2009 |
| 20090280434 | RESIST COMPOSITION AND PATTERNING PROCESS - A copolymer of an alkali-soluble (α-trifluoromethyl)-acrylate and a norbornene derivative is useful as an additive to a resist composition. When processed by immersion lithography, the resist composition exhibits excellent water repellency and water slip and forms a pattern with few development defects. | 11-12-2009 |
| 20090286182 | RESIST PROTECTIVE COATING COMPOSITION AND PATTERNING PROCESS - A protective coating composition comprising a copolymer of an alkali-soluble (α-trifluoromethyl)acrylate and a norbornene derivative as a base polymer, optionally in admixture with a second polymer containing sulfonic acid and/or sulfonic acid amine salt in repeat units is applied onto a resist film. The protective coating is effective in minimizing development defects and forming a resist pattern of improved profile. | 11-19-2009 |
| 20100062366 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R | 03-11-2010 |
| 20100062372 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by at least one of formulae (1-1) to (1-3) wherein R | 03-11-2010 |
| 20100062373 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R | 03-11-2010 |
| 20100062374 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R | 03-11-2010 |
| 20100112482 | FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS - A fluorinated monomer of cyclic acetal structure has formula (1) wherein R is a C | 05-06-2010 |
| 20100136482 | RESIST COMPOSITION AND PATTERNING PROCESS - A resist composition is provided comprising (A) an additive polymer of acyl-protected hexafluoroalcohol structure, (B) a base polymer having a structure derived from lactone ring, hydroxyl group and/or maleic anhydride, the base polymer becoming soluble in alkaline developer under the action of acid, (C) a photoacid generator, and (D) an organic solvent. The additive polymer is transparent to radiation of wavelength up to 200 nm, and its properties can be tailored by a choice of the polymer structure. | 06-03-2010 |
| 20100136485 | ACETAL COMPOUNDS AND THEIR PREPARATION, POLYMERS, RESIST COMPOSITIONS AND PATTERNING PROCESS - An acetal compound of formula (1) is provided wherein R | 06-03-2010 |
| 20100136486 | RESIST PROTECTIVE COATING COMPOSITON AND PATTERNING PROCESS - A protective coating composition comprising a polymer of acyl-protected hexafluoroalcohol structure as a base polymer, optionally in admixture with a second polymer containing sulfonic acid amine salt in recurring units is applied onto a resist film. The protective coating is transparent to radiation of wavelength up to 200 nm. | 06-03-2010 |
| 20100227273 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of acenaphthene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance. | 09-09-2010 |
| 20100227274 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of fluorene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance. | 09-09-2010 |
| 20100266957 | RESIST COMPOSITION AND PATTERNING PROCESS - An additive polymer comprising recurring units of formula (1) is added to a resist composition comprising a base resin, a photoacid generator, and an organic solvent. R | 10-21-2010 |
| 20100304295 | ACID-LABILE ESTER MONOMER HAVING SPIROCYCLIC STRUCTURE, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - An acid-labile ester monomer of spirocyclic structure has formula (1) wherein Z is a monovalent group having a polymerizable double bond, X is a divalent group which forms a cyclopentane, cyclohexane or norbornane ring, R | 12-02-2010 |
| 20100310986 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS - A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. Resin component (A) is a polymer comprising recurring units of formula (1) wherein R | 12-09-2010 |
| 20110151381 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A fluorinated monomer has formula (1) wherein R | 06-23-2011 |
