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Koji Arita

Koji Arita, Osaka JP

Patent application numberDescriptionPublished
20100061142MEMORY ELEMENT AND MEMORY APPARATUS - Memory elements (03-11-2010
20100090193NONVOLATILE MEMORY ELEMENT ARRAY AND MANUFACTURING METHOD THEREOF - A lower electrode (04-15-2010
20100190313METHOD FOR MANUFACTURING NONVOLATILE STORAGE ELEMENT AND METHOD FOR MANUFACTURING NONVOLATILE STORAGE DEVICE - A method for manufacturing a nonvolatile storage element that minimizes shape shift between an upper electrode and a lower electrode, and which includes: depositing, in sequence, a connecting electrode layer which is conductive, a lower electrode layer and a variable resistance layer which are made of a non-noble metal nitride and are conductive, an upper electrode layer made of noble metal, and a mask layer; forming the mask layer, into a predetermined shape; forming the upper electrode layer, the variable resistance layer, and the lower electrode layer into the predetermined shape by etching using the mask layer as a mask; and removing, simultaneously, the mask and a region of the connecting electrode layer that has been exposed by the etching.07-29-2010
20100193760CURRENT RESTRICTING ELEMENT, MEMORY APPARATUS INCORPORATING CURRENT RESTRICTING ELEMENT, AND FABRICATION METHOD THEREOF - In a current rectifying element (08-05-2010
20100308298NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE INCORPORATING NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element includes a first electrode (12-09-2010
20110002155CURRENT CONTROL ELEMENT, MEMORY ELEMENT, AND FABRICATION METHOD THEREOF - A memory element (01-06-2011
20110103133MEMORY CELL ARRAY, NONVOLATILE STORAGE DEVICE, MEMORY CELL, AND METHOD OF MANUFACTURING MEMORY CELL ARRAY - A method of manufacturing a memory cell array in which first conductive layers (05-05-2011
20110114912NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A nonvolatile semiconductor memory device (05-19-2011
20110164447CURRENT STEERING ELEMENT, STORAGE ELEMENT, STORAGE DEVICE, AND METHOD FOR MANUFACTURING CURRENT STEERING ELEMENT - A current steering element which can prevent occurrence of write disturb even when electric pulses having different polarities are applied and can cause large current to flow through a variable resistance element, and with which data can be written without problem. In a storage element (07-07-2011

Koji Arita, Sagamihara-Shi JP

Patent application numberDescriptionPublished
20090236747Semiconductor device and method for fabricating the same - A multilevel interconnect structure in a semiconductor device comprises a first insulating layer (09-24-2009

Koji Arita, Kanagawa JP

Patent application numberDescriptionPublished
20080283404METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE TO DECREASE DEFECT NUMBER OF PLATING FILM - A method for manufacturing a semiconductor device is provided which includes performing an electroplating step to fill concavities formed on a substrate. The electroplating step further includes: performing a first electroplating step; performing a first reverse bias step; performing a second electroplating step; performing a second reverse bias step; and a third electroplating step. The polarity of the first and the second reverse bias steps is different from that of the first electroplating step. A difference between the third current density and the fourth current density is larger than a difference between the first current density and the second current density.11-20-2008

Patent applications by Koji Arita, Kanagawa JP

Koji Arita, Kawasaki JP

Patent application numberDescriptionPublished
20080203572SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - The present invention provides a semiconductor device having interconnects, reduced in leakage current between the interconnects and improved in the TDDB characteristic, which comprises an insulating interlayer 08-28-2008