| Patent application number | Description | Published |
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| 20090305157 | Resin for toner and toner composition - A toner and a resin for toner are provided which are of good low-temperature fixing ability and good anti-blocking property of toner at high temperature and high humidity and good pulverisability. The present invention is directed to a resin for toner, the resin comprising a polyester resin (A) produced by reacting a polyester resin (a) having an acid value of 6 mgKOH/g or less and a hydroxyl value of 10 to 80 mgKOH/g with at least one carboxylic acid (b) selected from the group consisting of aliphatic carboxylic acids, aromatic carboxylic acids, their anhydrides and lower alkyl (C1-C4) esters, wherein the equivalent ratio OHa/COOHb is 0.55 to 1.0 where OHa represents the equivalent of the hydroxyl groups originating in (a) in the reaction of (a) and (b) and COOHb represents the equivalent of the carboxyl groups originating in (b) in the reaction of (a) and (b), and wherein the polyester resin (A) has an acid value of 13 to 50 mgKOH/g and a hydroxyl value of 8 mgKOH/g or less; and a toner composition including the same. | 12-10-2009 |
| 20100196812 | RESIN FOR TONER AND TONER COMPOSITION - The object is to develop a resin for a toner, which has both of hot offset resistance and a low-temperature fixing property even when used in a high-speed and energy-saving toner. Thus, disclosed is a resin for a toner, which comprises a polyester resin (A) having a THF insoluble fraction content of 1 to 36 wt %, a peak top molecular weight of 4500 to 20000 as measured by gel permeation chromatography on a THF soluble fraction, and a softening point of 120 to 180° C., and meeting the requirements represented by the following formulae (1) and (2): | 08-05-2010 |
| Patent application number | Description | Published |
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| 20090067265 | SEMICONDUCTOR STORAGE DEVICE - A precharge circuit steps up a voltage of a bit line connected to a memory cell to a power supply voltage. A plurality of step-down circuits step down the voltage of the bit line to a voltage level lower than the power supply voltage before data is read from the memory cell. The plurality of step-down circuits are connected to the bit line, and the plurality of step-down circuits are controlled by step-down control signals different to each other. | 03-12-2009 |
| 20090067273 | SEMICONDUCTOR STORAGE DEVICE - A voltage of a bit line connected to a memory cell is stepped up up to a power supply voltage by a precharge circuit. Before data is read from the memory cell, the voltage of the bit line is stepped down to a voltage level lower than the power supply voltage by a step-down circuit. A precharge switching element controls a connection between a high-potential-side power supply and the precharge circuit and a connection between a low-potential-side power supply and the precharge circuit. A power supply connecting circuit is provided between the precharge switching element and the high-potential-side power supply. A ground connecting circuit is provided between a connecting point at which the precharge switching element is connected to the power supply connecting circuit and the low-potential-side power supply. | 03-12-2009 |
| 20090141565 | SEMICONDUCTOR STORAGE DEVICE - A bit line potential monitor circuit is provided in a bit line, and a step-down circuit of the bit line is controlled base on information from the monitor circuit. As a result, the bit line is easily stepped down to an optimal potential level in accordance with a potential and a load capacity thereof without being affected by variability in devices or operation conditions. | 06-04-2009 |
| 20110116329 | SEMICONDUCTOR STORAGE DEVICE - A memory cell ( | 05-19-2011 |
| 20110211408 | SEMICONDUCTOR STORAGE DEVICE - A voltage of a bit line connected to a memory cell is stepped up to a power supply voltage by a precharge circuit. Before data is read from the memory cell, the voltage of the bit line is stepped down to a voltage level lower than the power supply voltage by a step-down circuit. A precharge switching element controls a connection between a high-potential-side power supply and the precharge circuit and a connection between a low-potential-side power supply and the precharge circuit. A power supply connecting circuit is provided between the precharge switching element and the high-potential-side power supply. A ground connecting circuit is provided between a connecting point at which the precharge switching element is connected to the power supply connecting circuit and the low-potential-side power supply. | 09-01-2011 |
