| Patent application number | Description | Published |
|---|
| 20080217680 | NON-VOLATILE SEMICONDUCTOR MEMORY USING CHARGE-ACCUMULATION INSULATING FILM - There is provided a non-volatile semiconductor memory having a charge accumulation layer of a configuration where a metal oxide with a dielectric constant sufficiently higher than a silicon nitride, e.g., a Ti oxide, a Zr oxide, or a Hf oxide, is used as a base material and an appropriate amount of a high-valence substance whose valence is increased two levels or more (a VI-valence) is added to produce a trap level that enables entrance and exit of electrons with respect to the base material. | 09-11-2008 |
| 20080237697 | NONVOLATILE SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME - A metal oxide having a sufficiently higher dielectric constant than silicon nitride, such as Ti oxide, Zr oxide, or Hf oxide is used as base material, and in order to generate a trap level capable of moving in and out electrons therein, a high-valence substance of valence of 2 or more (that is, valence VI or higher) is added by a proper amount, and to control the trap level, a proper amount of nitrogen (carbon, boron, or low-valence substance) is added, and thus a nonvolatile semiconductor memory having a charge accumulating layer is obtained. | 10-02-2008 |
| 20080237699 | NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF - A nonvolatile semiconductor memory includes a source area and a drain area provided on a semiconductor substrate with a gap which serves as a channel area, a first insulating layer, a charge accumulating layer, a second insulating layer (block layer) and a control electrode, formed successively on the channel area, and the second insulating layer is formed by adding an appropriate amount of high valence substance into base material composed of substance having a sufficiently higher dielectric constant than the first insulating layer so as to accumulate a large amount of negative charges in the block layer by localized state capable of trapping electrons, so that the high dielectric constant of the block layer and the high electronic barrier are achieved at the same time. | 10-02-2008 |
| 20080315288 | MEMORY CELL OF NONVOLATILE SEMICONDUCTOR MEMORY - A memory cell of a nonvolatile semiconductor memory includes a semiconductor region, source/drain areas arranged separately from each other in the semiconductor region, a tunnel insulating film arranged on a channel region between the diffusion areas, a floating gate electrode arranged on the tunnel insulating film, an inter-electrode insulator arranged on the floating gate electrode, and a control gate electrode arranged on the inter-electrode insulator. The inter-electrode insulator includes lanthanoid-based metal Ln, aluminum Al, and oxygen O, and a composition ratio Ln/(Al+Ln) between the lanthanoid-based metal and the aluminum takes a value within the range of 0.33 to 0.39. | 12-25-2008 |
| 20090057750 | NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT AND MANUFACTURING METHOD THEREOF - A nonvolatile semiconductor memory element includes a semiconductor substrate, a source region and a drain region which are provided separately in the semiconductor substrate, a tunnel insulating layer which is provided between the source region and the drain region on the semiconductor substrate, a charge storage layer which is provided on the tunnel insulating layer, a block insulating layer which is provided on the charge storage layer and includes a crystallized lanthanum aluminate layer, and a control gate electrode which is provided on the block insulating layer. | 03-05-2009 |
| 20090057751 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device according to an example of the present invention includes a semiconductor region, source/drain areas arranged separately in the semiconductor region, a tunnel insulating film arranged on a channel region between the source/drain areas, a floating gate electrode arranged on the tunnel insulating film, an inter-electrode insulating film arranged on the floating gate electrode, and a control gate electrode arranged on the inter-electrode insulating film. The inter-electrode insulating film includes La, Al and Si. | 03-05-2009 |
| 20090078983 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A MONOS type non-volatile semiconductor memory device which is capable of electrically writing, erasing, reading and retaining data, the memory device including source/drain regions, a first gate insulating layer, a first charge trapping layer formed on the first gate insulating layer, a second gate insulating layer formed on the first charge trapping layer, and a controlling electrode formed on the second gate insulating layer. The first charge trapping layer includes an insulating film containing Al and O as major elements and having a defect pair formed of a complex of an interstitial O atom and a tetravalent cationic atom substituting for an Al atom, the insulating film also having electron unoccupied levels within the range of 2 eV-6 eV as measured from the valence band maximum of Al | 03-26-2009 |
| 20090107586 | METHOD FOR MANUFACTURING A LANTHANUM OXIDE COMPOUND - A method for manufacturing a lanthanum oxide compound on a substrate includes: setting the number of H | 04-30-2009 |
| 20090166710 | NONVOLATILE SEMICONDUCTOR MEMORY - A nonvolatile semiconductor memory device includes: a semiconductor substrate; and a memory cell. The memory cell includes: a source region and a drain region formed at a distance from each other on the semiconductor substrate; a tunnel insulating film formed on a channel region of the semiconductor substrate, the channel region being located between the source region and the drain region; a charge storage film formed on the tunnel insulating film; a charge block film formed on the charge storage film; and a control electrode that is formed on the charge block film. The control electrode includes a Hf oxide film or a Zr oxide film having at least one element selected from the first group consisting of V, Cr, Mn, and Tc added thereto, and having at least one element selected from the second group consisting of F, H, and Ta added thereto. | 07-02-2009 |
| 20090206393 | NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME - A nonvolatile memory element includes a semiconductor region, a source region and a drain region provided in the semiconductor region, a tunnel insulating layer provided on the semiconductor region between the source region and the drain region, a charge storage layer provided on the tunnel insulating layer, a block insulating layer provided on the charge storage layer, and a control gate electrode provided on the block insulating layer. The charge storage layer includes one of an oxide, a nitride and an oxynitride, which contains at least one material selected from the group consisting of Hf, Al, Zr, Ti and a rare-earth metal, and is entirely or partially crystallized. The block insulating layer includes one of an oxide, an oxynitride, a silicate and an aluminate, which contains at least one rare-earth metal. | 08-20-2009 |
| 20090212346 | SEMICONDUCTOR MEMORY ELEMENT - A semiconductor memory element includes: a tunnel insulating film formed on a semiconductor substrate; a HfON charge storage film with Bevan clusters formed on the tunnel insulating film; a blocking film formed on the HfON charge storage film; and a gate electrode formed on the blocking film. | 08-27-2009 |
| 20090236654 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage device including: a semiconductor substrate; a source region and a drain region that are formed in the semiconductor substrate so as to be separated from each other and so as to define a channel region therebetween; a tunnel insulating film that is formed on the channel region; an insulative charge storage film that is formed on the tunnel insulating film; a conductive charge storage film that is formed on the insulative charge storage film so as to be shorter than the insulative charge storage film in a channel direction; an interlayer insulating film that is formed on the conductive charge storage film; and a gate electrode that is formed on the interlayer insulating film. | 09-24-2009 |
| 20090242963 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - In a semiconductor device, the side walls are made of SiO | 10-01-2009 |
| 20100034023 | NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY, AND METHOD FOR OPERATING NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT - According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film. | 02-11-2010 |
| 20100078704 | SEMICONDUCTOR STORAGE ELEMENT AND MANUFACTURING METHOD THEREOF - A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film. | 04-01-2010 |
| 20110003481 | Method for manufacturing a semiconductor device - It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower. | 01-06-2011 |
