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Koichi Hirano, Osaka JP

Koichi Hirano, Osaka JP

Patent application numberDescriptionPublished
20090085227FLIP-CHIP MOUNTING BODY AND FLIP-CHIP MOUNTING METHOD - A flip chip mounting body in which a circuit substrate having a plurality of connection terminals and an electronic part (semiconductor chip) having a plurality of electrode terminals are aligned face to face with each other, with a resin composition composed of solder powder, a resin and a convection additive being sandwiched in between, while a means such as spacers is interposed in between so as to provide a uniform gap between the two parts, or the electronic part (semiconductor chip) is placed inside a plate-shaped member having two or more protruding portions, so that the solder powder is allowed to move through boiling of the convection additive and to be self-aggregated to form a solder layer, thereby electrically connecting the connection terminals and the electrode terminals; and a mounting method for such a mounting body.04-02-2009
20090203169FLIP CHIP MOUNTING BODY AND METHOD FOR MOUNTING SUCH FLIP CHIP MOUNTING BODY AND BUMP FORMING METHOD - In a flip chip mounted body in which a semiconductor chip (08-13-2009
20090321124SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS THEREOF - A pair of discretionary points on a principal surface of a block are coupled to each other with a metal wire having a length larger than a distance between the pair of discretionary points, liquid resin is applied to the principal surface so as to cover the metal wire and then cured, so that a resin-cured material is formed, and the upper-surface portion of the resin-cured material is removed together with an intermediate portion of the metal wire, and then the block is removed from the resin-cured material.12-31-2009
20100012936MANUFACTURING METHOD OF FLEXIBLE SEMICONDUCTOR DEVICE AND FLEXIBLE SEMICONDUCTOR DEVICE - A layered film of a three-layer clad foil formed with a first metal layer 01-21-2010
20100164061SEMICONDUCTOR CHIP, SEMICONDUCTOR MOUNTING MODULE, MOBILE COMMUNICATION DEVICE, AND PROCESS FOR PRODUCING SEMICONDUCTOR CHIP - A semiconductor chip comprising a capacitor capable of effectively controlling the voltage drop of an LSI is provided. A semiconductor substrate is provided with an element electrode having at least its surface constituted of an aluminum electrode. The surface of the aluminum electrode is roughened. An oxide film is provided on the aluminum electrode. A conductive film is provided on the oxide film. The aluminum electrode, oxide film and conductive film form a capacitor.07-01-2010
20100261321METHOD FOR MANUFACTURING FLEXIBLE SEMICONDUCTOR DEVICE - There is provided a method for manufacturing a flexible semiconductor device. The manufacturing method is characterized by comprising (i) a step of forming an insulating film on the upper surface of a resin film, (ii) a step of forming a pattern of extraction electrodes on the upper surface of the resin film, (iii) a step of forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the pattern of extraction electrodes, and (iv) a step of forming a sealing resin layer on the upper surface of the resin film in such a manner that the sealing resin layer covers the semiconductor layer and the pattern of extraction electrodes, wherein at least one forming step among the above (i) to (iv) is carried out by a printing method. In the manufacturing method, various layers can be formed by a simple printing process without using a vacuum process, photolithography, or the like.10-14-2010
20100276691METHOD FOR FABRICATING FLEXIBLE SEMICONDUCTOR DEVICE AND LAYERED FILM USED THEREFORE - A method for fabricating a flexible semiconductor device includes: preparing a layered film 11-04-2010
20100283054FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - There is provided a method for manufacturing a flexible semiconductor device characterized by comprising (i) a step of forming an insulating film on the upper surface of metal foil, (ii) a step of forming an extraction electrode pattern on the upper surface of the metal foil, (iii) a step of forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the extraction electrode pattern, (iv) a step of forming a sealing resin layer on the upper surface of the metal foil in such a manner that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) a step of forming electrodes by etching the metal foil, wherein the metal foil is used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). A TFT element can be fabricated by a simple process because the metal foil serving as the support need not be finally stripped off. Further, a high-temperature process can be introduced to the fabrication of the insulating film and the semiconductor layer because the metal foil is used as the support, whereby the TFT characteristic is improved.11-11-2010
20110042677FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprises a metal layer comprising a gate electrode, a source electrode and a drain electrode; a metal oxide film made from a metal which constitutes the metal layer and formed over a surface region of the metal layer; and a semiconductor layer formed above the gate electrode via the metal oxide film. In the flexible semiconductor device, uncovered portions, each of which is not covered with the metal oxide film, are locally formed in the surface region of the metal layer; and also electrical connections are formed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer via the uncovered portions.02-24-2011
20110049598MANUFACTURING METHOD OF FLEXIBLE SEMICONDUCTOR DEVICE AND FLEXIBLE SEMICONDUCTOR DEVICE - A layered film of a three-layer clad foil formed with a first metal layer 03-03-2011
20110121298MANUFACTURING METHOD OF FLEXIBLE SEMICONDUCTOR DEVICE - A method includes the steps of preparing a multilayer film 05-26-2011
20110133137METAL PARTICLES-DISPERSED COMPOSITION AND FLIP CHIP MOUNTING PROCESS AND BUMP-FORMING PROCESS USING THE SAME - A flip chip mounting process wherein a semiconductor chip and a circuit substrate are electrically interconnected. The process includes the steps of preparing a semiconductor chip on which a first plurality of electrodes are formed and a circuit substrate on which a second plurality of electrodes are formed; supplying a composition onto a surface of the circuit substrate, such surface being provided with second plurality of electrodes; bringing the semiconductor chip into contact with a surface of said composition such that the first plurality of electrodes are opposed to the second plurality of electrodes; and heating the circuit substrate, and thereby electrical connections including a metal component constituting the metal particles dispersed in the composition are formed between the first plurality of electrodes and the second plurality of electrodes. Also, a thermoset resin layer is formed between the semiconductor chip and the circuit substrate.06-09-2011
20110162578FLIP-CHIP MOUNTING METHOD AND BUMP FORMATION METHOD - [Problem] To provide a flip-chip mounting method and a bump formation method applicable to flip-chip mounting of a next generation LSI and having high productivity and high reliability.07-07-2011

Patent applications by Koichi Hirano, Osaka JP