Patent application number | Description | Published |
20090085227 | FLIP-CHIP MOUNTING BODY AND FLIP-CHIP MOUNTING METHOD - A flip chip mounting body in which a circuit substrate having a plurality of connection terminals and an electronic part (semiconductor chip) having a plurality of electrode terminals are aligned face to face with each other, with a resin composition composed of solder powder, a resin and a convection additive being sandwiched in between, while a means such as spacers is interposed in between so as to provide a uniform gap between the two parts, or the electronic part (semiconductor chip) is placed inside a plate-shaped member having two or more protruding portions, so that the solder powder is allowed to move through boiling of the convection additive and to be self-aggregated to form a solder layer, thereby electrically connecting the connection terminals and the electrode terminals; and a mounting method for such a mounting body. | 04-02-2009 |
20090203169 | FLIP CHIP MOUNTING BODY AND METHOD FOR MOUNTING SUCH FLIP CHIP MOUNTING BODY AND BUMP FORMING METHOD - In a flip chip mounted body in which a semiconductor chip ( | 08-13-2009 |
20090321124 | SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS THEREOF - A pair of discretionary points on a principal surface of a block are coupled to each other with a metal wire having a length larger than a distance between the pair of discretionary points, liquid resin is applied to the principal surface so as to cover the metal wire and then cured, so that a resin-cured material is formed, and the upper-surface portion of the resin-cured material is removed together with an intermediate portion of the metal wire, and then the block is removed from the resin-cured material. | 12-31-2009 |
20100012936 | MANUFACTURING METHOD OF FLEXIBLE SEMICONDUCTOR DEVICE AND FLEXIBLE SEMICONDUCTOR DEVICE - A layered film of a three-layer clad foil formed with a first metal layer | 01-21-2010 |
20100164061 | SEMICONDUCTOR CHIP, SEMICONDUCTOR MOUNTING MODULE, MOBILE COMMUNICATION DEVICE, AND PROCESS FOR PRODUCING SEMICONDUCTOR CHIP - A semiconductor chip comprising a capacitor capable of effectively controlling the voltage drop of an LSI is provided. A semiconductor substrate is provided with an element electrode having at least its surface constituted of an aluminum electrode. The surface of the aluminum electrode is roughened. An oxide film is provided on the aluminum electrode. A conductive film is provided on the oxide film. The aluminum electrode, oxide film and conductive film form a capacitor. | 07-01-2010 |
20100261321 | METHOD FOR MANUFACTURING FLEXIBLE SEMICONDUCTOR DEVICE - There is provided a method for manufacturing a flexible semiconductor device. The manufacturing method is characterized by comprising (i) a step of forming an insulating film on the upper surface of a resin film, (ii) a step of forming a pattern of extraction electrodes on the upper surface of the resin film, (iii) a step of forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the pattern of extraction electrodes, and (iv) a step of forming a sealing resin layer on the upper surface of the resin film in such a manner that the sealing resin layer covers the semiconductor layer and the pattern of extraction electrodes, wherein at least one forming step among the above (i) to (iv) is carried out by a printing method. In the manufacturing method, various layers can be formed by a simple printing process without using a vacuum process, photolithography, or the like. | 10-14-2010 |
20100276691 | METHOD FOR FABRICATING FLEXIBLE SEMICONDUCTOR DEVICE AND LAYERED FILM USED THEREFORE - A method for fabricating a flexible semiconductor device includes: preparing a layered film | 11-04-2010 |
20100283054 | FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - There is provided a method for manufacturing a flexible semiconductor device characterized by comprising (i) a step of forming an insulating film on the upper surface of metal foil, (ii) a step of forming an extraction electrode pattern on the upper surface of the metal foil, (iii) a step of forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the extraction electrode pattern, (iv) a step of forming a sealing resin layer on the upper surface of the metal foil in such a manner that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) a step of forming electrodes by etching the metal foil, wherein the metal foil is used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). A TFT element can be fabricated by a simple process because the metal foil serving as the support need not be finally stripped off. Further, a high-temperature process can be introduced to the fabrication of the insulating film and the semiconductor layer because the metal foil is used as the support, whereby the TFT characteristic is improved. | 11-11-2010 |
20110042677 | FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprises a metal layer comprising a gate electrode, a source electrode and a drain electrode; a metal oxide film made from a metal which constitutes the metal layer and formed over a surface region of the metal layer; and a semiconductor layer formed above the gate electrode via the metal oxide film. In the flexible semiconductor device, uncovered portions, each of which is not covered with the metal oxide film, are locally formed in the surface region of the metal layer; and also electrical connections are formed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer via the uncovered portions. | 02-24-2011 |
20110049598 | MANUFACTURING METHOD OF FLEXIBLE SEMICONDUCTOR DEVICE AND FLEXIBLE SEMICONDUCTOR DEVICE - A layered film of a three-layer clad foil formed with a first metal layer | 03-03-2011 |
20110121298 | MANUFACTURING METHOD OF FLEXIBLE SEMICONDUCTOR DEVICE - A method includes the steps of preparing a multilayer film | 05-26-2011 |
20110133137 | METAL PARTICLES-DISPERSED COMPOSITION AND FLIP CHIP MOUNTING PROCESS AND BUMP-FORMING PROCESS USING THE SAME - A flip chip mounting process wherein a semiconductor chip and a circuit substrate are electrically interconnected. The process includes the steps of preparing a semiconductor chip on which a first plurality of electrodes are formed and a circuit substrate on which a second plurality of electrodes are formed; supplying a composition onto a surface of the circuit substrate, such surface being provided with second plurality of electrodes; bringing the semiconductor chip into contact with a surface of said composition such that the first plurality of electrodes are opposed to the second plurality of electrodes; and heating the circuit substrate, and thereby electrical connections including a metal component constituting the metal particles dispersed in the composition are formed between the first plurality of electrodes and the second plurality of electrodes. Also, a thermoset resin layer is formed between the semiconductor chip and the circuit substrate. | 06-09-2011 |
20110162578 | FLIP-CHIP MOUNTING METHOD AND BUMP FORMATION METHOD - [Problem] To provide a flip-chip mounting method and a bump formation method applicable to flip-chip mounting of a next generation LSI and having high productivity and high reliability. | 07-07-2011 |
20110180900 | SEMICONDUCTOR CHIP, SEMICONDUCTOR MOUNTING MODULE, MOBILE COMMUNICATION DEVICE, AND PROCESS FOR PRODUCING SEMICONDUCTOR CHIP - A semiconductor chip comprising a capacitor capable of effectively controlling the voltage drop of an LSI is provided. A semiconductor substrate is provided with an element electrode having at least its surface constituted of an aluminum electrode. The surface of the aluminum electrode is roughened. An oxide film is provided on the aluminum electrode. A conductive film is provided on the oxide film. The aluminum electrode, oxide film and conductive film form a capacitor. | 07-28-2011 |
20120001173 | FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film. | 01-05-2012 |
20120113500 | ELECTRONIC PAPER AND METHOD FOR PRODUCING SAME - Provided is an electronic paper that permits a high-quality, large area to be easily created. Also provided is a method for producing the electronic paper. The electronic paper comprises: a first substrate upon which first electrodes are formed and a second substrate upon which second electrodes are formed, said first substrate and second substrate disposed so as to face each other; and a plurality of cell spaces constituting pixels between said first substrate and second substrate. The first substrate comprises a plurality of first sheet members, each having a first electrode formed thereon. By disposing a cover substrate on said first sheet members, each with a partition wall therebetween, a plurality of subsheet formations comprising the plurality of cell spaces partitioned by the partition walls are formed, and the first electrodes are connected in between adjacent subsheet formations. | 05-10-2012 |
20120181543 | FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - Disclosed are a flexible semiconductor device and manufacturing method therefor whereby the capacitances of capacitor parts of semiconductor elements and the like can be increased while decreasing parasitic capacitances that arise between multilevel interconnections. The disclosed flexible semiconductor device is provided with an insulating film on which a semiconductor element is formed. The top and bottom surfaces of the insulating film have a top wiring pattern layer and a bottom wiring pattern layer, respectively. The semiconductor element comprises: a semiconductor layer formed on the top surface of the insulating film; a source electrode and a drain electrode formed on the top surface of the insulating film so as to contact the semiconductor layer; and a gate electrode formed on the bottom surface of the insulating film so as to be opposite the semiconductor layer. A first thickness, which is the thickness of the insulting film facing the source electrode, the drain electrode, the top wiring pattern layer, and the bottom wiring pattern layer, is greater than a second thickness, which is the thickness of the insulating film between the gate electrode and the semiconductor layer. | 07-19-2012 |
20120280229 | FLEXIBLE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME AND IMAGE DISPLAY DEVICE - There is provided a method for manufacturing a flexible semiconductor device. The method of the present invention comprises the steps of: (A) providing a metal foil; (B) forming an insulating layer on the metal foil, the insulating layer having a portion serving as a gate insulating film; (C) forming a supporting substrate on the insulating layer; (D) etching away a part of the metal foil to form a source electrode and a drain electrode therefrom; (E) forming a semiconductor layer in a clearance portion located between the source electrode and the drain electrode by making use of the source and drain electrodes as a bank member; and (F) forming a resin film layer over the insulating layer such that the resin film layer covers the semiconductor layer, the source electrode and the drain electrode. In the step (F), a part of the resin film layer interfits with the clearance portion located between the source and drain electrodes. | 11-08-2012 |
20120286264 | FLEXIBLE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME AND IMAGE DISPLAY DEVICE - There is provided a method for manufacturing a flexible semiconductor device. The method of the present invention comprises the steps of: (a) preparing a metal foil having a concave portion; (b) forming a gate insulating film on a bottom face of the concave portion of the metal foil; (c) forming a semiconductor layer above the bottom face of the concave portion via the gate insulating film while making use of the concave portion as a bank member; and (d) forming a source electrode and a drain electrode such that they make contact with the semiconductor layer. | 11-15-2012 |
20130032797 | FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - The present invention achieves a formation of a metal oxide film of a thin film transistor with a simplified process. The present invention is concerned with a method for manufacturing a field-effect transistor comprising a gate electrode, a source electrode, a drain electrode, a channel layer and a gate insulating layer wherein the channel layer is formed by using a metal salt-containing composition comprising a metal salt, a polyvalent carboxylic acid having a cis-form structure of —C(COOH)═C(COOH)—, an organic solvent and a water wherein a molar ratio of the polyvalent carboxylic acid to the metal salt is in the range of 0.5 to 4.0. | 02-07-2013 |
20130161628 | FLEXIBLE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, IMAGE DISPLAY DEVICE USING THE SAME AND METHOD FOR MANUFACTURING THE IMAGE DISPLAY DEVICE - There is provided a method for manufacturing a flexible semiconductor device. The manufacturing method of the flexible semiconductor device of the present invention comprising the steps of: forming a gate electrode; forming a gate insulating film so that the gate insulating film contacts with the gate electrode; forming a semiconductor layer on the gate insulating film such that the semiconductor layer is opposed to the gate electrode; forming source and drain electrodes so that the source and drain electrodes contact with the semiconductor layer; forming a flexible film layer so that the flexible film layer covers the semiconductor layer and the source and drain electrodes; forming vias in the flexible film layer; forming a first metal layer by disposing a metal foil onto the flexible film layer, and thereby a semiconductor device precursor is provided; and subjecting the first metal layer to a processing treatment to form a wiring from a part of the first metal layer, wherein, in the step of the processing treatment of the first metal layer, the wiring is formed in a predetermined position by using at least one of the vias as an alignment marker. | 06-27-2013 |
20130168677 | FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A method for manufacturing a flexible semiconductor device includes (i) forming an insulating film on the upper surface of metal foil, (ii) forming an extraction electrode pattern on the upper surface of the metal foil, (iii) forming a semiconductor layer on the insulating film such that the semiconductor layer is in contact with the extraction electrode pattern, (iv) forming a sealing resin layer on the upper surface of the metal foil such that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) forming electrodes by etching the metal foil, the metal foil being used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). The metal foil need not be stripped, and a high-temperature process can be used. | 07-04-2013 |
20130168681 | FLEXIBLE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, IMAGE DISPLAY DEVICE USING THE SAME AND METHOD FOR MANUFACTURING THE IMAGE DISPLAY DEVICE - There is provided a method for manufacturing a flexible semiconductor device. The method of the flexible semiconductor device according to the present invention comprises the steps of: (i) forming an insulating layer on one of principal surfaces of a metal foil; (ii) forming a semiconductor layer on the insulating layer, and then forming source and drain electrodes so that the source and drain electrodes contact with the semiconductor layer; (iii) forming a flexible film layer so that the flexible film layer covers the semiconductor layer and the source and drain electrodes; (iv) forming vias in the flexible film layer, and thereby a semiconductor device precursor is provided; and (v) subjecting the metal foil to a processing treatment, and thereby forming a gate electrode from the metal foil, wherein, in the step (v) of the processing treatment of the metal foil, the gate electrode is formed in a predetermined position by using at least one of the vias of the semiconductor device precursor as an alignment marker. | 07-04-2013 |
20140038366 | METHOD FOR MANUFACTURING FLEXIBLE SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE DISPOSED WITHIN AN OPENING OF A RESIN FILM - There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film. | 02-06-2014 |
20140151225 | ELECTROCHEMICAL DETECTOR AND METHOD FOR PRODUCING SAME - An electrochemical detector is an electrochemical detector for detecting a substance in a liquid by generating a redox cycle, the electrochemical detector comprising: a first working electrode having a first electrode surface, a second working electrode having a second electrode surface, and a plurality of insulating spacer particles, wherein the first and second electrode surfaces are placed so as to face each other so that an electric field is formed between the first and second electrode surfaces, and the plurality of spacer particles are placed along the first and second electrode surfaces so as to separate the first and second electrode surfaces from each other. | 06-05-2014 |
20140192005 | METHOD FOR PRESENTING TACTILE SENSATION AND DEVICE THEREFOR - The tactile sense presentation device comprises: a plurality of first electrodes covered with an insulating film and arranged on a same plane; a plurality of second electrodes arranged on the plane with tops exposed to outside; and a control unit performing a first operation in parallel with a second operation, wherein the first operation is for applying temporally changing first voltages to a part of the plurality of first electrodes to generate electric fields which are changed by the part of the plurality of first electrodes, and the second operation is for applying temporally changing first electric currents to a part of the plurality of second electrodes to cause the electric currents to flow from the part of the plurality of second electrodes to second electrodes which are different from the part of the plurality of second electrodes via electric conductors. | 07-10-2014 |
20140240110 | TACTILE SENSE PRESENTATION DEVICE AND TACTILE SENSE PRESENTATION METHOD - A tactile sense presentation device including: a tactile-sense presentation unit having a first working electrode group of a plurality of first working electrodes arranged along a first direction; and a control unit operable to apply a first tactile sense signal having a first waveform to each of the first working electrodes. The control unit applies the first tactile sense signal, in which a phase difference corresponding to a distance between adjacent first working electrodes is applied to the first waveform, to each of the plurality of first working electrodes so as to cause the first waveform to travel along the first direction at a predetermined speed. | 08-28-2014 |
20140266649 | METHOD FOR PRESENTING TACTILE SENSATION AND DEVICE THEREFOR - The tactile sense presentation device comprises: first electrodes covered with an insulating film and arranged on a same plane; second electrodes arranged on a same plane with tops exposed to outside; and a control unit performing a first operation in parallel with a second operation, wherein the first operation is for applying temporally changing first voltages to a part of first electrodes to generate electric fields which are changed by the part of first electrodes, and the second operation is for applying temporally changing first electric currents to a part of second electrodes to cause the electric currents to flow from the part of second electrodes to second electrodes which are different from the part of second electrodes via electric conductors, characterized in that first electrodes and second electrodes are arranged not to overlap each other. | 09-18-2014 |
20140340210 | METHOD FOR PRESENTING TACTILE SENSATION AND DEVICE THEREFOR - The tactile sense presentation method comprises: arranging a plurality of first electrodes covered with an insulating film on a same plane; arranging a plurality of second electrodes on a same plane with tops exposed to outside; and performing a first operation in parallel with a second operation, wherein the first operation is for applying temporally changing first voltages to a part of the plurality of first electrodes to generate electric fields which are changed by the part of the plurality of first electrodes, and the second operation is for applying temporally changing first electric currents to a part of the plurality of second electrodes to cause the electric currents to flow from the part of the plurality of second electrodes to second electrodes which are different from the part of the plurality of second electrodes via electric conductors. | 11-20-2014 |
20150069403 | FLEXIBLE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE - A flexible semiconductor device includes a wire embedded layer that has flexibility and has a first principal surface and a second principal surface, a thick wire embedded in the wire embedded layer so as to be substantially flush with the first principal surface of the wire embedded layer, and a thin film transistor element electrically connected to the thick wire. The thin film transistor element is disposed on the first principal surface of the wire embedded layer. The flexible semiconductor device is suitable for increasing the area and can be manufactured with a high productivity. A display device including the flexible semiconductor device and a method for manufacturing the flexible semiconductor device are also disclosed. | 03-12-2015 |
20150069904 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A flexible display device includes a wire embedded layer that has flexibility and has a first principal surface, a thick wire embedded in the wire embedded layer so as to be substantially flush with the first principal surface of the wire embedded layer, an extraction lower electrode electrically connected to the thick wire and disposed on the first principal surface of the wire embedded layer, an emitting layer disposed on the extraction lower electrode, and an upper electrode disposed on the emitting layer. The flexible display device is suitable for large-screen devices and offers high productivity. | 03-12-2015 |