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Koi, JP
Katsuhiko Koi, Kawasaki-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090109581 | MAGNETORESISTANCE EFFECT ELEMENT - There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni. | 04-30-2009 |
Kiyoshi Koi, Shiga JP
| Patent application number | Description | Published |
|---|---|---|
| 20100041555 | 3-Phenoxy-4-pyridazinol derivatives and herbicidal composition containing the same - A compound represented by the formula: | 02-18-2010 |
Makoto Koi, Kagoshima JP
| Patent application number | Description | Published |
|---|---|---|
| 20100285387 | SEGMENTED-IN-SERIES SOLID OXIDE FUEL CELL - There is obtained a segmented-in-series solid oxide fuel cell provided with a current turnaround structure and containing a porous electrically insulating substrate having a fuel flow path extending from a fuel feed port to a fuel discharge port, provided therein, and a pair of the top and back surfaces, in parallel with the fuel flow path, together with a pair of side-faces of the porous electrically insulating substrate, in the transverse direction thereof, provided on the exterior thereof, wherein solid oxide fuel cells made up by sequentially stacking an interconnector adjacent to a fuel electrode layer, the fuel electrode layer, an electrolyte layer, and an air electrode layer, and an interconnector adjacent to the air electrode layer in that order so as to be in parallel with the fuel flow path are disposed at intervals on the pair of the top and back surfaces, respectively. | 11-11-2010 |
Naohiro Koi, Kure-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100154735 | ENGINE BALANCER - An engine balancer includes a pair of balancer shafts and a balancer housing for housing the balancer shafts, and is placed in an oil pan at the bottom of an engine. The balancer housing includes a pair of front and rear bearing walls respectively supporting the balancer shafts with rolling bearings interposed therebetween. The bearing walls of the balancer housing are attached to bearing walls for a crankshaft. The housing body has an aperture at the top thereof. The aperture of the housing body is covered with a plate-shaped cover member thinner than a member forming the housing body. | 06-24-2010 |
Takeshi Koi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100275610 | POWER GENERATION PLANT AND CONTROL METHOD THEREOF - A power generation plant comprises a plant control device ( | 11-04-2010 |
Tomoaki Koi, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20100301440 | Mesa photodiode and method for manufacturing the same - A mesa photodiode which includes a mesa, the sidewall of the mesa is a surface that is inclined in the direction in which the bottom of the mesa becomes wider. At least the sidewall of the mesa is covered with a semiconductor layer of a first conductivity type, a second conductivity type, a semi-insulating type, or an undoped type. The semiconductor layer is grown on at least the sidewall of the mesa. The inclined angle of the inclined surface of the mesa at the upper end portion is smaller than the inclined angle of the inclined surface of the mesa at the lower end portion. | 12-02-2010 |
| 20110024863 | Mesa photodiode and method for manufacturing the same - A mesa photodiode which includes a mesa, the side wall of the mesa (a light-receiving region mesa) and at least a shoulder portion of the mesa in an upper face of the mesa are continuously covered with a semiconductor layer of a first conductivity type, a second conductivity type, a semi-insulating type, or an undoped type (an undoped InP layer, for example) that is grown on the side wall and the upper face of the mesa. In the semiconductor layer, a layer thickness D | 02-03-2011 |
| 20110024865 | SEMICONDUCTOR LIGHT RECEIVING DEVICE - According to an exemplary aspect of the present invention, at least a semiconductor mesa and a semiconductor layer covering at least the side wall of the mesa and a semiconductor mesa are formed on an n-type semiconductor substrate. The semiconductor mesa includes at least a light absorption layer and a p-type contact layer. The principal surface of the semiconductor substrate tilts at an angle θ to the (100) plane. The angle θ is 0.1 degree≦|θ|≦10 degrees. | 02-03-2011 |