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Kohiro
Kenji Kohiro, Ibaraki JP
| Patent application number | Description | Published |
|---|---|---|
| 20110001136 | OXIDE SEMICONDUCTOR MATERIAL, METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR MATERIAL, ELECTRONIC DEVICE AND FIELD EFFECT TRANSISTOR - The present invention provides an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor. The oxide semiconductor material contains Zn, Sn, and O, does not contain In, and has an electron carrier concentration higher than 1×10 | 01-06-2011 |
| 20110108813 | ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC THIN FILM AND ORGANIC THIN FILM ELEMENT PROVIDED WITH ORGANIC THIN FILM - An object of the present invention is to provide an organic semiconductor composition capable of forming an organic film having high carrier transportability. A preferable organic semiconductor composition contains a lower molecular weight compound and a higher molecular weight compound having carrier transportability, and the solubility parameter of the higher molecular weight compound and the solubility parameter of the lower molecular weight compound differ by 0.6 to 1.5. | 05-12-2011 |
Kenji Kohiro, Tsukuba-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090261364 | Fluorescent substance - A fluorescent substance characterized by comprising a base crystal composed of a compound represented by the formula: M | 10-22-2009 |
| 20100249319 | POLYMER COMPOUND, METHOD FOR PRODUCING THE SAME, AND COMPOSITION CONTAINING THE POLYMER COMPOUND - It is an object of the invention to provide a polymer compound that can exhibit high charge mobility when used in an organic transistor. The polymer compound according to a preferred embodiment comprises a repeating unit represented by the following formula (1). | 09-30-2010 |
Kenji Kohiro, Tsukuba JP
| Patent application number | Description | Published |
|---|---|---|
| 20090031944 | Method for producing compound semiconductor epitaxial substrate having PN junction - Disclosed is a method for producing a compound semiconductor epitaxial substrate having a pn junction by selective growth which is characterized by using a base substrate having an average residual strain of not more than 1.0×10 | 02-05-2009 |
| 20090159848 | Fluorescent Substance - A light-emitting device with improved luminescence characteristics, particularly color-rendering properties, includes a phosphor. The phosphor includes a compound represented by formula aM | 06-25-2009 |