Patent application number | Description | Published |
20090032096 | PROCESS FOR PRODUCING THIN-FILM DEVICE, AND DEVICES PRODUCED BY THE PROCESS - In a process for producing a thin-film device having an inorganic film formed over a resin-based substrate, a thermal-buffer layer is formed over a substrate which contains a resin material as a main component, and a light-cutting layer is formed over the thermal-buffer layer, where the light-cutting layer prevents damage from short-wavelength light to the substrate by reducing the proportion of the short-wavelength light which reaches the substrate. Thereafter, a non-monocrystalline film which is to be annealed is formed over the light-cutting layer, where the non-monocrystalline film transmits the short-wavelength light to such a degree that the short-wavelength light can damage the substrate. Then, an inorganic film is formed by irradiating the non-monocrystalline film with the short-wavelength light so as to anneal the non-monocrystalline film. | 02-05-2009 |
20090035536 | PROCESS FOR PRODUCING THIN-FILM DEVICE, AND DEVICES PRODUCED BY THE PROCESS - In a process for producing a thin-film device, a thermal-buffer layer is formed over a substrate which contains a resin material as a main component, and a light-cutting layer is formed over at least a region of the substrate over which a non-monocrystalline film to be annealed is not to be formed, where the light-cutting layer prevents damage from short-wavelength light to the substrate by reducing a proportion of the short-wavelength light which reaches the substrate. Thereafter, the non-monocrystalline film which is to be annealed is formed in a pattern over the substrate having the thermal-buffer layer, and an inorganic film is formed by irradiating the non-monocrystalline film with the short-wavelength light so as to anneal the non-monocrystalline film. | 02-05-2009 |
20090152506 | PROCESS FOR PRODUCING ORIENTED INORGANIC CRYSTALLINE FILM, AND SEMICONDUCTOR DEVICE USING THE ORIENTED INORGANIC CRYSTALLINE FILM - In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material. Then, the non-monocrystalline film is crystallized by heating the non-monocrystalline film to a temperature equal to or higher than the crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei. | 06-18-2009 |
20090250694 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE - A semiconductor device includes a substrate and a channel region which is formed above the substrate by printing, wherein a relationship L≧ | 10-08-2009 |
20090250695 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND MANUFACTURING METHOD OF DISPLAY DEVICE - A semiconductor device includes a substrate and a semiconductor layer having a channel region, the channel region is made from an oxide semiconductor which satisfies Vc/Va>4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component. | 10-08-2009 |
20090294765 | SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING THE SAME, SENSOR AND ELECTRO-OPTICAL DEVICE - A gate electrode, a gate insulation film and an inorganic oxide film are formed in this order on a substrate, and a source electrode and a drain electrode are formed to partially cover the inorganic oxide film. Then, oxidation treatment is applied to reduce the carrier density at a region of the inorganic oxide film which is not covered by the electrodes and is used as a channel region of a semiconductor device. | 12-03-2009 |
20090294964 | ELECTRICALLY-CONDUCTIVE INORGANIC COATING, METHOD FOR PRODUCING THE COATING, CIRCUIT BOARD, AND SEMICONDUCTOR APPARATUS - A method for producing an electrically-conductive inorganic coating includes depositing, on a substrate, a coating-precursor containing a plurality of inorganic particles and at least one kind of organic component by a liquid-phase method by using a material-liquid containing the inorganic particles and an organic solvent. The inorganic particles are coated with a dispersant binding to the surfaces of the inorganic particles by chemical bonds that can be broken by oxidation. Further, the method includes oxidizing the coating-precursor at a temperature exceeding 100° C., and that is less than or equal to the pyrolysis initiation temperature of an organic component that has the highest pyrolysis initiation temperature among the at least one kind of organic component and less than or equal to the heat-resistance temperature of the substrate, thereby breaking the chemical bonds to eliminate the dispersant from the surfaces, and decomposing the at least one kind of organic component. | 12-03-2009 |
20090298226 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - During a process of forming an active layer of a semiconductor device using a ZnO film, the ZnO film is laser-annealed with an ultraviolet pulsed laser to reduce the resistance of the film, and then oxidation treatment is applied to increase the specific resistance value at a channel portion of the ZnO film, which once has excessively low resistance after the laser annealing, to 10 | 12-03-2009 |
20100183973 | PHOTOCONDUCTIVE LAYER MANUFACTURING METHOD - A method for manufacturing a photoconductive layer formed of Bi | 07-22-2010 |
20140174528 | FLEXIBLE ORGANIC ELECTRONIC DEVICE - An organic electronic device includes at least an organic-inorganic layered barrier layer, a plastic support, a transparent electrode layer, an organic active layer, a metal electrode layer and an upper sealing member, and contains a strong acid polymer, wherein an n-type oxide semiconductor layer is provided adjacent to the metal electrode layer on the plastic support-side of the metal electrode layer. | 06-26-2014 |