| Patent application number | Description | Published |
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| 20080210978 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a gate electrode formed above a semiconductor region; a drain region and a source region formed in portions of the semiconductor region located below sides of the gate electrode in a gate length direction, respectively; a plurality of drain contacts formed on the drain region to be spaced apart in a gate width direction of the gate electrode; and a plurality of source contacts formed on the source region to be spaced apart in the gate width direction of the gate electrode. The intervals between the drain contacts are greater than the intervals between the source contacts. | 09-04-2008 |
| 20090059453 | SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit includes an external pad, a ground line, a first protection circuit between the external pad and the ground line, and a second protection circuit between the external pad and the ground line. The second protection circuit is formed by a first protection element, a second protection element, and a resistor. With this structure, the resistance value of the resistor is set to an arbitrary value, so that an unnecessary current which would be generated at the time of power-off of the LSI can be decreased to a value which does not deteriorate the reliability of the LSI. | 03-05-2009 |
| 20110227197 | SEMICONDUCTOR INTEGRATED CIRCUIT COMPRISING ELECTRO STATIC DISCHARGE PROTECTION ELEMENT - An electro static discharge protection element being formed by a diode including a well region of a first conductivity type on a surface of a semiconductor substrate, and a first diffusion layer of a second conductivity type in the well region. The first diffusion layer is surrounded by a second diffusion layer of the first conductivity type in the well region. The first diffusion layer has a surface on which a first contact region connected to an input/output terminal is formed. The first diffusion layer has a surface on which a second contact region connected to a reference voltage terminal is formed. | 09-22-2011 |
| 20110284963 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a gate electrode formed above a semiconductor region; a drain region and a source region formed in portions of the semiconductor region located below sides of the gate electrode in a gate length direction, respectively; a plurality of drain contacts formed on the drain region to be spaced apart in a gate width direction of the gate electrode; and a plurality of source contacts formed on the source region to be spaced apart in the gate width direction of the gate electrode. The intervals between the drain contacts are greater than the intervals between the source contacts. | 11-24-2011 |
| Patent application number | Description | Published |
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| 20110092459 | ALPHA HELIX MIMETICS AND METHODS RELATING THERETO - Alpha-helix mimetic structures and compounds represented by the formula (I) wherein the general formula and the definition of each symbol are as defined in the specification, a compound relating thereto, and methods relating thereto, are disclosed. Applications of these compounds in the treatment of medical conditions, e.g., cancer diseases, fibrotic diseases, and pharmaceutical compositions comprising the mimetics are further disclosed. | 04-21-2011 |
| 20110263607 | ALPHA HELIX MIMETICS IN THE TREATMENT OF CANCER - Alpha-helix mimetic structures and compounds represented by the formula (I) wherein the general formula and the definition of each symbol are as defined in the specification, a compound relating thereto, and methods relating thereto, are disclosed. Applications of these compounds in the treatment of medical conditions, e.g., cancer diseases, fibrotic diseases, and pharmaceutical compositions comprising the mimetics are further disclosed. | 10-27-2011 |
