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Kofuji
Hirohide Kofuji, Ibaraki JP
| Patent application number | Description | Published |
|---|---|---|
| 20100294720 | Method for separating fission product, and apparatus used therefor - Provided is a method that can remove fission products in a spent electrolyte produced in a dry reprocessing process by an easy operation and can vitrify the fission products easily, the fission products including not only the fission products that generate precipitate but also the fission products that generate no precipitate. A spent electrolyte produced in a dry reprocessing process is subjected to a phosphate conversion processing to obtain a processing target substance; the processing target substance is passed through a separating material | 11-25-2010 |
Michihisa Kofuji, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090197093 | PRINTING INK COMPOSITION OF SOLVENT RECOVERY/REUSE TYPE, DILUENT SOLVENT, AND METHOD OF REUSING RECOVERED SOLVENT - A method of recovering and recycling solvents, comprising, during printing or coating of solvent-recoverable and recyclable printing ink composition comprising solvents, a step of recovering the solvents vaporized in a solvent recovery apparatus, a step of separating the solvents obtained into one or more single solvents and/or one or more azeotropic compositions of two or more solvents by multi-stage distillation, and a step of recycling them as a printing ink raw material and/or dilution solvent raw material. | 08-06-2009 |
Naoyuki Kofuji, Tama JP
| Patent application number | Description | Published |
|---|---|---|
| 20100311246 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A problem of a resist mask collapse due to a plasma process is solved. In a method of manufacturing a semiconductor device including steps of a plasma process to a sample having a mask made of an organic material, the plasma process includes a first step of a plasma process under a gas containing any of fluorine, oxygen, or nitrogen, or containing all of them, and a second step of the plasma process under a gas containing a rare gas without containing any of fluorine, oxygen, and nitrogen, and the first step and the second step are repeated. | 12-09-2010 |
Naoyuki Kofuji, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090098669 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A semiconductor device manufacturing method and a semiconductor device manufacturing apparatus which enable to detect an etching end-point with high accuracy are provided. In etching of a lower layer formed on a semiconductor wafer using a mask which comprises a plurality of patterns extending in a predetermined direction (line-and-space patterns) and contains at least one of a metal layer and an electrically-conductive metal compound layer, the surface of the semiconductor wafer is irradiated with inspection light, the etching is performed while monitoring the intensity of the polarized light component perpendicular to the predetermined extending direction of the line-and-space patterns and the etching is terminated at the time the intensity of the polarized light component reaches a reflected light intensity corresponding to a desired remaining thickness of the lower layer. | 04-16-2009 |
| 20090310645 | SAMPLE TEMPERATURE CONTROL METHOD - A method of stably controlling the temperature of a sample placed on a sample stage to a desired temperature by estimating a sample temperature accurately, the sample stage including a refrigerant flow path to cool the sample stage, a heater to heat the sample stage, and a temperature sensor to measure the temperature of the sample stage. This method comprises the steps of: measuring in advance the variation-with-time of supply electric power to the heater, temperature of the sample, and temperature of the temperature sensor, without plasma processing; approximating the relation among the measured values using a simultaneous linear differential equation; estimating a sample temperature from the variation-with-time of sensor temperature y | 12-17-2009 |
| 20100167426 | PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD - The invention provides a method for overcoming the drawbacks of deteriorated throughput, deteriorated reproducibility and plasma discharge instability when continuous discharge is performed during multiple steps of plasma etching. The present invention provides a gas switching method for switching from gas supply source | 07-01-2010 |
Takeki Kofuji, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090035532 | CONDUCTIVE LAMINATE - A conductive multilayer stack ( | 02-05-2009 |