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Kochupurackal
Jinesh Kochupurackal, Eindhoven NL
| Patent application number | Description | Published |
|---|---|---|
| 20110263036 | AMORPHOUS THIN FILM FOR SENSING - An apparatus and method for low-power sensing, for example, sensing of chemical or biochemical analytes in a gas or liquid phase are disclosed. One aspect relates to the use of a thin continuous film without grain boundaries as a sensing layer in devices for sensing a predetermined analyte and to low power devices having such sensing layer. The sensing layer has a surface exposed to the analyte. The electrical impedance of the sensing layer changes upon adsorption of the predetermined analyte on the exposed surface of the sensing layer. The sensing layer may have a thickness in the range between about 1 nm and 100 nm, such as between about 1 nm and 30 nm. The sensing layer may be an amorphous layer. | 10-27-2011 |
Jinesh Balakrishna Pillai Kochupurackal, Singapore SG
| Patent application number | Description | Published |
|---|---|---|
| 20110101471 | METHOD OF FORMING A NANOCLUSTER-COMPRISING DIELECTRIC LAYER AND DEVICE COMPRISING SUCH A LAYER - A method of forming a dielectric layer on a further layer of a semiconductor device is disclosed. The method comprises depositing a dielectric precursor compound and a further precursor compound over the further layer, the dielectric precursor compound comprising a metal ion from the group consisting of Yttrium and the Lanthanide series elements, and the further precursor compound comprising a metal ion from the group consisting of group IV and group V metals; and chemically converting the dielectric precursor compound and the further precursor compound into a dielectric compound and a further compound respectively, the further compound self-assembling during said conversion into a plurality of nanocluster nuclei within the dielectric layer formed from the first dielectric precursor compound. The nanoclusters may be dielectric or metallic in nature. Consequently, a dielectric layer is formed that has excellent charge trapping capabilities. Such a dielectric layer is particularly suitable for use in semiconductor devices such as non-volatile memories. | 05-05-2011 |
Jinesh Balakrishna Pillai Kochupurackal, Taman Jurong IN
| Patent application number | Description | Published |
|---|---|---|
| 20110128727 | INTEGRATED SEEBECK DEVICE - An integrated device includes a Seebeck device ( | 06-02-2011 |
Jinesh Balakrishna Pillai Kochupurackal, Eindhoven NL
| Patent application number | Description | Published |
|---|---|---|
| 20110147891 | CAPACITOR AND A METHOD OF MANUFACTURING THE SAME - A capacitor ( | 06-23-2011 |
| 20110163088 | TOKEN COMPRISING IMPROVED PHYSICAL UNCLONABLE FUNCTION - The invention relates to a token, to an integrated circuit comprising the token, to a method of randomizing the token and a system for randomizing the token. The token comprises a physical unclonable function and comprising probing means for probing the physical unclonable function. The physical unclonable function comprises a capacitor comprising a dielectric medium being arranged at least partially between the electrodes of the capacitor. The dielectric medium is configured for contributing to a capacitance value of the capacitor and comprises conducting particles substantially randomly dispersed in the dielectric medium. The conducting particles comprise a phase changeable material being changeable between a first structural state having a first conductivity and a second structural state having a second conductivity different from the first conductivity. | 07-07-2011 |
Jinesh B.p. Kochupurackal, Singapore SG
| Patent application number | Description | Published |
|---|---|---|
| 20110297908 | Phase Change Memory Cells and Fabrication Thereof - A phase change memory cell, e.g. a line-cell ( | 12-08-2011 |