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Ko, JP

Bong-Gyun Ko, Tokyo JP

Patent application numberDescriptionPublished
20080242048METHOD FOR MANUFACTURING SOI SUBSTRATE - To easily and accurately flush a substrate surface serving an SOI area with a substrate surface serving as a bulk area, make a buried oxide film, and prevent an oxide film from being exposed on substrate surface.10-02-2008
20090203187Method of Manufacturing SOI Substrate - To easily and accurately flush a substrate surface serving an SOI area with a substrate surface serving as a bulk area, make a buried oxide film, and prevent an oxide film from being exposed on substrate surface.08-13-2009
20100197047METHOD FOR MANUFACTURING SIMOX WAFER - At oxygen ion implanting steps in manufacture of a SIMOX wafer, a path is formed inside or on a back surface of wafer holding means, and oxygen ions are implanted while heating an outer peripheral portion of the wafer that is in contact with the wafer holding means by flowing a heated fluid through this path. An in-plane temperature of a wafer held at the time of ion implantation is prevented from becoming uneven, and in-plane film thicknesses of both an SOI layer and a BOX layer are uniformed.08-05-2010

Patent applications by Bong-Gyun Ko, Tokyo JP

Changhee Ko, Tsukuba-Shi JP

Patent application numberDescriptionPublished
20110206862Titanium Nitride Film Deposition by Vapor Deposition Using Cyclopentadienyl Alkylamino Titanium Precursors - Disclosed are cyclopentadienyl alkylamino titanium precursors selected from the group consisting of Ti(iPr08-25-2011

Dukhyun Ko, Kanagawa JP

Patent application numberDescriptionPublished
20110316217AUTOMATIC DOCUMENT TRANSPORT DEVICE, IMAGE READING DEVICE, AND IMAGE FORMING APPARATUS - An automatic document transport device includes a document stacker that is movable between a stacking position and an open position; a document transport path; a document feed member; a document output section; a document output member disposed downstream of an image reading position, the document output member including upper and lower output members; and a shielding member disposed above a document output slot and between the document output member and the document output section, the shielding member including first and second shielding portions, the first shielding portion extending upward and having a lower end disposed above a region in which the upper and lower output members contact each other, the second shielding portion extending downstream from the lower end of the first shielding portion, the shielding member shielding the upper output member from a space between the document stacker and the document output section.12-29-2011

Gaku Ko, Nagano-Ken JP

Patent application numberDescriptionPublished
20080235947LIQUID EJECTING HEAD - A conductive nozzle plate is formed with a nozzle orifice. An insulative layer is formed on a first face of the nozzle plate. A head body includes a pressure chamber adapted to contain liquid therein and a pressure generating element operable to cause pressure fluctuation in the liquid. The head body is attached to a second face of the nozzle plate so as to communicate the pressure chamber with the nozzle orifice. The second face of the nozzle plate and the head body are fixed to a head case. A conductive head cover covers a part of the first face of the nozzle plate while exposing the nozzle orifice. A part of the nozzle plate and the head cover directly come into contact with each other.10-02-2008

Higashi Ko, Iwate JP

Patent application numberDescriptionPublished
20080304908Gutter Block Structure, Water Channel Formed by Gutter Block Structures, and Method of Manufacturing Gutter Block Structure - A gutter block structure of the present invention has a configuration in which a vegetable fiber layer made of palm fibers or the like is integrally attached to an inner surface of a water-permeable concrete material, sidewall surfaces which serve as the inner surface are formed into a stepped shape, and a bottom surface which serves as the inner surface is formed into an irregular shape. Further, both the sidewalls are formed into a curved shape or S-shape. Thus, when a water channel is formed by the gutter block structures, the supply and drain of water between the water channel and the surrounding soil is enabled, the flow velocity of water can be reduced, and zones with different flow velocities can be provided. Thus, an environment at the water channel and around the water channel can be closer to a natural condition, and an environment for growing underwater creatures can be brought into a fairly good condition.12-11-2008

Kenmei Ko, Toyama JP

Patent application numberDescriptionPublished
20090137128Substrate Processing Apparatus and Semiconductor Device Producing Method - Disclosed is a substrate processing apparatus including: a reaction tube to accommodate at least one substrate; at least a pair of electrodes disposed outside the reaction tube; and a dielectric member, wherein a plasma generation region is formed at least in a space between an inner wall of the reaction tube and an outer circumferential edge of the substrate, the member includes a main face extending in a radial direction of the substrate and in a substantially entire circumferential direction of the substrate in a horizontal plane parallel to a main face of the substrate, and is disposed in an outer circumferential region of the substrate, and gas activated in the plasma generation region is supplied through a surface region of the main face of the member to the substrate.05-28-2009

Nikka Ko, Mie-Ken JP

Patent application numberDescriptionPublished
20110223769METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - According to one embodiment, a method of fabricating a semiconductor device, including, selectively forming a first film as a core member on a film to be processed, forming a second film on a side surface and an upper surface of the core member, and on an upper surface of the film to be processed to cover the film, the second film which is constituted with same material as the first film and is doped with impurities being different in amount from impurities in the first film, removing the second film on the core member and on the film to be processed to form a sidewall mask constituted with the second film on the side surface of the core member, selectively removing the core member, and etching the film to be processed using the sidewall mask film as a mask.09-15-2011

Nikka Ko, Yokohama-Shi JP

Patent application numberDescriptionPublished
20100176368METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE, AND SEMICONDUCTOR MEMORY DEVICE - A method of manufacturing semiconductor memory device comprises forming a first wiring layer and a memory cell layer above a semiconductor substrate; forming a plurality of first trenches extending in a first direction in the first wiring layer and the memory cell layer, thereby forming first wirings and separating the memory cell layer; burying a first interlayer film in the first trenches to form a stacked body; forming a second wiring layer above the stacked body; forming a plurality of second trenches, extending in a second direction intersecting the first direction and reaching an upper surface of the first interlayer film in depth, in the first stacked body with the second wiring layer formed thereabove, thereby forming second wirings; removing the first interlayer film isotropically; and digging the second trenches down to an upper surface of the first wirings, thereby forming memory cells.07-15-2010

Reika Ko, Chiba JP

Patent application numberDescriptionPublished
20120012556PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD - A plasma etching apparatus 01-19-2012

Shunichi Ko, Yokohama JP

Patent application numberDescriptionPublished
20090213870TRANSMITTING/RECEIVING SYSTEM, NODE AND COMMUNICATION METHOD - A transmitting/receiving system includes a control field controlling a transmitting priority of a dynamic slot is included in each communication cycle, and a node of the transmitting/receiving system sets control information including a preferential usage request for a dynamic slot that the node transmits in the control field and notifies all nodes in the transmitting/receiving system of the preferential usage request for the dynamic slot.08-27-2009