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Kneissl
Andrea Kneissl, Ottobrunn DE
| Patent application number | Description | Published |
|---|---|---|
| 20090149595 | SILICONE POLYMERS CROSSLINKABLE VIA METHYLOL GROUPS - Storage stable compounds having at least two organopolysiloxane groups and at least one methylol group are useful as coatings on textile, paper, and other substrates, and are post-crosslinkable. | 06-11-2009 |
| 20090186982 | ORGANOSILICONE COPOLYMERS - Organosilicon polymers prepared by copolymerizing an unsaturated methylol compound, an unsaturated monomer, and an organopolysiloxane bearing at least one unsaturated group exhibit good binding and crosslinking properties when applied to fibers, and the ability to tailor substrate hydrophobicity. | 07-23-2009 |
Jürgen Kneissl, Jetzendorf DE
| Patent application number | Description | Published |
|---|---|---|
| 20110242725 | CAPACITOR ARRANGEMENT AND METHOD FOR PRODUCING A CAPACITOR ARRANGEMENT - The present invention relates to a capacitor arrangement having a capacitor and a first terminal plate and a second terminal plate. The capacitor has a first contact face and a second contact face arranged opposite one another. The terminal plates are each connected to one of the contact faces and have protrusions on one end suitable for engaging in recesses in a power rail. | 10-06-2011 |
Michael Kneissl, Berlin DE
| Patent application number | Description | Published |
|---|---|---|
| 20120146047 | P-CONTACT AND LIGHT-EMITTING DIODE FOR THE ULTRAVIOLET SPECTRAL RANGE - The present invention relates to a p-doped contact for use in a light-emitting diode for the ultraviolet spectral range, comprising a p-contact layer having a first surface for contacting a radiation zone and a second surface comprising, on the side facing away from the first surface: a) a coating, which directly contacts 5%-99.99% of the second surface of the p-contact layer and contains or consists of a material having a maximum reflectivity of at least 60% for light with a wavelength of 200 nm to 400 nm; b) a plurality of p-injectors, which are disposed directly on the second surface of the p-contact layer. | 06-14-2012 |
Michael A. Kneissl, Berlin DE
| Patent application number | Description | Published |
|---|---|---|
| 20090053845 | Method For Controlling The Structure And Surface Qualities Of A Thin Film And Product Produced Thereby - A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching. Following etching, a substrate is bonded to the exposed surface which acts as a heat sink and may be conductive providing for backside electrical contact to the active region. | 02-26-2009 |
Michael A. Kneissl, Mountain View, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080204709 | BIOSENSOR USING MICRODISK LASER - A compact sensor for detecting the presence of biological or chemical species includes a microdisk laser and a wavelength shift detector. The microdisk laser is coated with a biological or chemical recognition element, which binds preferentially with a target analyte. Because the recognition element and the target analyte adhere to the sidewall surface of the microdisk laser, they increase the effective diameter of the laser, which shifts the output wavelength by a detectable amount. The presence of a wavelength shift indicates the presence of the target analyte, and the magnitude of the wavelength shift corresponds to the mass load of the target analyte on the sidewall surface of the microdisk laser. | 08-28-2008 |