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Kleiman
Casper Kleiman, Alkmaar NL
| Patent application number | Description | Published |
|---|---|---|
| 20100320232 | FOAM DISPENSING ASSEMBLY - The present invention provides a foam dispensing assembly comprising a liquid piston pump, comprising a liquid cylinder and a liquid piston delimiting a liquid pump chamber, and a liquid inlet and outlet, an air piston pump comprising an air cylinder and an air piston delimiting an air pump chamber, and an air inlet and outlet, a common actuation button for actuation of said liquid pump and said air pump, a dispensing channel for mixing and dispensing liquid and air pumped by said liquid and air pump, respectively, and a securing collar for attachment of said dispensing assembly to a container. The invention is characterized in that said air cylinder is formed by a cylindrical skirt of said actuation button, and said air piston is at least partially formed by a cylindrical extension of said securing collar and in that said air chamber at least partially surrounds said liquid chamber. | 12-23-2010 |
Jacob I. Kleiman, Thornhill CA
| Patent application number | Description | Published |
|---|---|---|
| 20100009194 | Method of making charge dissipative surfaces of polymeric materials with low temperature dependence of surface resistivity and low RF loss - A method of making a charge dissipative surface of a polymeric material with low temperature dependence of the tunable surface resistivity, comprises the step of controllably carbonizing the surface of the polymeric material in a vacuum environment by bombarding the polymeric surface with an ion beam of rare gas ions, the energy level of the ion source being from low to moderate so as to reach a surface resistivity in the static dissipative range while having negligible impact on the RF transparency of the material and with tunable thermo-optical properties of the surface, including negligible impact on the thermo-optical properties. | 01-14-2010 |
Marina Kleiman, Rishon Lezion IL
| Patent application number | Description | Published |
|---|---|---|
| 20110286960 | CANCER THERAPY BY DOCETAXEL AND GRANULOCYTE COLONY-STIMULATING FACTOR (G-CSF) - Neutropenia is the dose-limiting toxicity of the tri-weekly docetaxel (Taxotere®) schedule. Here, we evaluate in Metastatic Breast Cancer (MBC) patients (N=38) a computerized method for predicting docetaxel-induced neutropenia, and use the model to identify improved docetaxel and Granulocyte Colony Stimulating Factor (G-CSF) regimens. Pharmacokinetics/pharmacodynamics (PK/PD) models were created and simulated concomitantly with a mathematical granulopoiesis model. Individual baseline neutrophil counts and docetaxel schedules served as inputs. Our trial validated the model accuracy in predicting nadir timings (r=0.99), grade 3/4 neutropenia (86% success) and neutrophil profiles (r=0.62). Model was robust to CYP3A-induced variability, except for slightly less accurate grade 3/4 neutropenia predictions. Simulations confirm smaller toxicity of the weekly docetaxel regimen than the tri-weekly one, and suggest an optimal G-CSF support for alleviating neutropenia, 60 μg/day QD×3, 6-7 days post-docetaxel, administered tri- and bi-weekly, and 4 days post weekly docetaxel>33 mg/m | 11-24-2011 |
Rafael Nathan Kleiman, Hamilton CA
| Patent application number | Description | Published |
|---|---|---|
| 20100263707 | BASE STRUCTURE FOR III-V SEMICONDUCTOR DEVICES ON GROUP IV SUBSTRATES AND METHOD OF FABRICATION THEREOF - The structure presented herein provides a base structure for semiconductor devices, in particular for III-V semiconductor devices or for a combination of III-V and Group IV semiconductor devices. The fabrication method for a base substrate comprises a buffer layer, a nucleation layer, a Group IV substrate and possibly a dopant layer. There are, in a general aspect, two growth steps: firstly the growth of a lattice-matched III-V material on a Group IV substrate, followed by secondly the growth of a lattice-mismatched III-V layer. The first layer, called the nucleation layer, is lattice-matched or closely lattice-matched to the Group IV substrate while the following layer, the buffer layer, deposited on top of the nucleation layer, is lattice-mismatched to the nucleation layer. The nucleation layer can further be used as a dopant source to the Group IV substrate, creating a p-n junction in the substrate through diffusion. Alternatively a separate dopant layer may be introduced. | 10-21-2010 |
| 20110023949 | HIGH EFFICIENCY SILICON-BASED SOLAR CELLS - The present invention relates to a system and method for generating high efficiency silicon-based photovoltaic cells such as solar cells. The solar cell of the present invention comprises a silicon substrate layer, a first buffer layer disposed on a first surface of the silicon substrate layer and a second buffer layer disposed on the opposing surface of the silicon substrate layer and a third buffer layer disposed directly on the first buffer layer, the first and second buffer layers being lattice mismatched to the silicon substrate layer, and a first device layer disposed on the third buffer layer and a second device layer disposed on the second buffer layer, the first and second device layers comprising at least one of Sb-based compounds, III-V compounds and II-VI compo | 02-03-2011 |