Patent application number | Description | Published |
20100282596 | METHODS AND SYSTEMS FOR REMOVING A MATERIAL FROM A SAMPLE - The present method relates to processes for the removal of a material from a sample by a gas chemical reaction activated by a charged particle beam. The method is a multiple step process wherein in a first step a gas is supplied which, when a chemical reaction between the gas and the material is activated, forms a non-volatile material component such as a metal salt or a metaloxide. In a second consecutive step the reaction product of the first chemical reaction is removed from the sample. | 11-11-2010 |
20100297362 | METHOD FOR PROCESSING AN OBJECT WITH MINIATURIZED STRUCTURES - A method for processing an object with miniaturized structures is provided. The method includes feeding a reaction gas onto a surface of the object. The method also includes processing the object by directing an energetic beam onto a processing site in a region, which is to be processed, on the surface of the object, in order to deposit material on the object or to remove material from the object. The method further includes detecting interaction products of the beam with the object, and deciding whether the processing of the object is to be continued or can be terminated with the aid of information which is obtained from the detected interaction products of the beam with the object. The region to be processed is subdivided into a number of surface segments, and the interaction products detected upon the beam striking regions of the same surface segment are integrated to form a total signal in order to determine whether processing of the object must be continued or can be terminated. | 11-25-2010 |
20110183444 | METHOD FOR ELECTRON BEAM INDUCED ETCHING - The invention relates to a method for electron beam induced etching of a material ( | 07-28-2011 |
20110183517 | METHOD FOR ELECTRON BEAM INDUCED DEPOSITION OF CONDUCTIVE MATERIAL - The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl with the method steps of providing at least one electron beam at a position of a substrate ( | 07-28-2011 |
20110183523 | METHOD FOR ELECTRON BEAM INDUCED ETCHING OF LAYERS CONTAMINATED WITH GALLIUM - The invention relates to a method for electron beam induced etching of a layer contaminated with gallium ( | 07-28-2011 |
20110210181 | APPARATUS AND METHOD FOR INVESTIGATING AND/OR MODIFYING A SAMPLE - An apparatus and a method for investigating and/or modifying a sample is disclosed. The apparatus comprises a charged particle source, at least one particle optical element forming a charged particle beam of charged particles emitted by said charged particle source. The apparatus further comprises an objective lens which generates a charged particle probe from said charged particle beam. The objective lens defines a particle optical axis. A first electrostatic deflection element is arranged—in a direction of propagation of charged particles emitted by said charged particle source—downstream of the objective lens. The electrostatic deflection element deflecting the charged particle beam in a direction perpendicular to said charged particle optical axis and has a deflection bandwidth of at least 10 MHz. | 09-01-2011 |
20120141693 | ION SOURCES, SYSTEMS AND METHODS - Ion sources, systems and methods are disclosed. | 06-07-2012 |
20130156939 | METHOD AND APPARATUS FOR ANALYZING AND/OR REPAIRING OF AN EUV MASK DEFECT - The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures. | 06-20-2013 |
20140007306 | APPARATUS AND METHOD FOR ANALYZING AND MODIFYING A SPECIMEN SURFACE | 01-02-2014 |
20140027512 | APPARATUS AND METHOD FOR INVESTIGATING AN OBJECT - The present invention refers to an apparatus and a method for investigating an object with a scanning particle microscope and at least one scanning probe microscope with a probe, wherein the scanning particle microscope and the at least one scanning probe microscope are spaced with respect to each other in a common vacuum chamber so that a distance between the optical axis of the scanning particle microscope and the measuring point of the scanning probe microscope in the direction perpendicular to the optical axis of the scanning particle microscope is larger than the maximum field of view of both the scanning probe microscope and the scanning particle microscope, wherein the method comprises the step of determining the distance between the measuring point of the scanning probe microscope and the optical axis of the scanning particle microscope. | 01-30-2014 |
20140165236 | METHOD AND APPARATUS FOR ANALYZING AND FOR REMOVING A DEFECT OF AN EUV PHOTOMASK - The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) determining first data by exposing the defect to ultra-violet radiation, (b) determining second data by scanning the defect with a scanning probe microscope, (c) determining third data by scanning the defect with a scanning particle microscope, and (d) com-bining the first, the second and the third data. | 06-12-2014 |
20140306121 | ION SOURCES, SYSTEMS AND METHODS - Ion sources, systems and methods are disclosed. | 10-16-2014 |