| Patent application number | Description | Published |
|---|
| 20080220562 | Structure And Fabrication Of Self-Aligned High-Performance Organic FETs - A low channel length organic field-effect transistor can be produced in high volume and at low cost. The transistor structure includes successively deposited patterned layers of a first conductor layer acting as a source terminal, a first dielectric layer, a second conductor layer acting as a drain terminal, a semiconductor layer, a second dielectric layer, and a third conductor layer acting as the gate terminal. In this structure, the transistor is formed on the edge of the first dielectric between the first conductor layer and the second conductor layer. The second conductor layer is deposited on the raised surfaces formed by the dielectric such that conductive ink does not flow into the trough between the dielectric raised surfaces. This is accomplished by coating a flat or rotary print plate with the conductive ink, and applying the appropriate pressure to deposit the materials only on the raised surfaces of the dielectric. The second metal is automatically aligned to the layer beneath it. Due to this self-alignment and the short channel formed by the thickness of the dielectric material, a high-performance FET is produced without the requirement of high-resolution lithography equipment. | 09-11-2008 |
| 20080311698 | Fabrication of self-aligned via holes in polymer thin films - A low-cost and efficient process produces self-aligned vias in dielectric polymer films that provides electrical connection between a top conductor and a bottom conductor. The process is achieved by printing conductive posts on the first patterned conductive layer, followed by the deposition of an unpatterned layer dielectric, followed by the deposition of a second patterned conductive layer. The vias are formed during the flash annealing of the post after the dielectric is deposited, but before the second conductive layer is deposited. In this process, the post material is annealed with a flash of light, resulting in a release of energy which removes the dielectric on the top of the post. | 12-18-2008 |
| 20100006826 | INCREASING YIELD IN OFETS BY USING A HIGH-K DIELECTRIC LAYER IN A DUAL DIELECTRIC LAYER - Dielectric layer pinholes in OFET structures are addressed through the addition of a high-K dielectric layer to eliminate the effects of shorts in the dielectric layer. The original dielectric layer is maintained such that the semiconductor/dielectric interface remains unchanged. The high-K dielectric layer contributes material to the gate dielectric to plug up pinholes in the original dielectric, but does not contribute significant capacitance due to the high dielectric constant of the additional dielectric layer. The incidence of pinholes in the dielectric layer is reduced without significantly affecting the performance of the OFET transistor. | 01-14-2010 |
| 20100009497 | PERFORMANCE IMPROVEMENTS OF OFETS THROUGH USE OF FIELD OXIDE TO CONTROL INK FLOW - An OFET includes a thick dielectric layer with openings in the active region of a transistor. After the field dielectric layer is formed, semiconductor ink is dropped in the active region cavities in the field dielectric layer, forming the semiconductor layer. The ink is bounded by the field dielectric layer walls. After the semiconductor layer is annealed, dielectric ink is dropped into the same cavities. As with the semiconductor ink, the field dielectric wall confines the flow of the dielectric ink. The confined flow causes the dielectric ink to pool into the cavity, forming a uniform layer within the cavity, and thereby decreasing the probability of pinhole shorting. After the dielectric is annealed, a gate layer covers the active region thereby completing a high performance OFET structure. | 01-14-2010 |
| 20110265553 | METHOD AND APPARATUS FOR DETERMINING A VAPOR SIGNATURE BASED UPON FREQUENCY - A method and apparatus for sensing analyte. The method includes the steps of sensing one or more parameters in reaction to the presence of one or more analytes and outputting a current therefrom in accordance with level of the sensed parameter by each of a plurality of sensors, each of the plurality of sensors being provided in one or more sensor array columns, receiving an output current from one of the plurality of sensors from each of the plurality of sensor arrays by a Voltage Controlled Oscillator (VCO) arranged in a VCO array. The method further includes the steps of generating an output oscillation frequency by each VCO in accordance with the level of the received output current, and counting a number of oscillations over a predetermined time received from each of the plurality of VCOs in the VCO array by a plurality of counters arranged in a counter array. | 11-03-2011 |
| 20110265554 | METHOD AND APPARATUS FOR VAPOR SIGNATURE WITH HEAT DIFFERENTIAL - An apparatus for sensing analyte is provided. The apparatus may include a plurality of sensor array columns, each sensor array column including a plurality of sensors, each sensor being adapted for sensing one or more parameters in reaction to the presence of one or more analytes and output a current therefrom in accordance with level of the sensed parameter, a heating element for selectively heating one or more of the sensor array columns, a Voltage Controlled Oscillator (VCO) array including a plurality of VCOs, each VCO adapted to receive an output current from one of the plurality of sensors from each of the plurality of sensor arrays and for and generating an output oscillation frequency in accordance with the level of the received output current, and a counter array including a plurality of counters, each counter adapted to receive an output from a corresponding VCO and count a number of oscillations over a predetermined time. | 11-03-2011 |
| 20110265555 | METHOD AND APPARATUS FOR VAPOR SIGNATURE WITH HEAT DIFFERENTIAL - A method for sensing analyte. The method includes the steps of sensing one or more parameters in reaction to the presence of one or more analytes and outputting a current therefrom in accordance with level of the sensed parameter by each of a plurality of sensors, each of the plurality of sensors being provided in one or more sensor array columns, selectively heating one or more of the sensor array columns by a heating element, and receiving an output current from one of the plurality of sensors from each of the plurality of sensor arrays by a Voltage Controlled Oscillator (VCO) arranged in a VCO array. The method further includes the steps of generating an output oscillation frequency by each VCO in accordance with the level of the received output current, and counting a number of oscillations over a predetermined time received from each of the plurality of VCOs in the VCO array by a plurality of counters arranged in a counter array. | 11-03-2011 |
| 20110267031 | METHOD AND APPARATUS FOR DETERMINING A VAPOR SIGNATURE BASED UPON FREQUENCY - An apparatus for sensing analyte is provided. The apparatus may include a plurality of sensor array columns, each sensor array column including a plurality of sensors, each sensor being adapted for sensing one or more parameters in reaction to the presence of one or more analytes and output a current therefrom in accordance with level of the sensed parameter, a Voltage Controlled Oscillator (VCO) array including a plurality of VCOs, each VCO adapted to receive an output current from one of the plurality of sensors from each of the plurality of sensor arrays and for and generating an output oscillation frequency in accordance with the level of the received output current, and a counter array including a plurality of counters, each counter adapted to receive an output from a corresponding VCO and count a number of oscillations over a predetermined time. | 11-03-2011 |
| 20110267077 | METHOD OF SENSOR CELL TIMING - A method for measuring values from a sensor cell having the basic structure of an MOS silicone transistor having and including a polymer material therein. The method includes the steps of expelling an analyte from the polymer material, determining a silicon current signature before analyte accumulation in a sensitive response region, introducing analyte into the polymer material, determining the silicon current signature immediately after analyte introduction, determining the organic current signature immediately after analyte introduction, allowing analyte accumulation in the polymer material, determining the silicon current signature after analyte accumulation, determining the organic current signature after analyte accumulation, and determining the silicon current signature after analyte accumulation in sensitive response region. | 11-03-2011 |
