Patent application number | Description | Published |
20090045387 | Resistively switching semiconductor memory - One embodiment provides a non-volatile semiconductor memory with CBRAM memory cells at which there exists, between the Ag-doped GeSe layer and the Ag top electrode, a chemically inert barrier layer improving the switching properties of the CBRAM memory cell. The active matrix material layer of the memory cell includes a GeSe/Ge:H double layer with a vitreous GeSe layer and an amorphous Ge:H layer. The amorphous Ge:H layer is positioned between the GeSe layer and the second electrode. Thus, the forming of AgSe conglomerates in the Ag doping and/or electrode layer is inhibited, so that precipitations are prevented and a homogeneous deposition of the silver doping layer is enabled. By means of the GeSe/Ge:H double layer system, the resistive non-volatile storage effect of the CBRAM memory cell is, on the one hand, preserved and, on the other hand, the chemical stability of the top electrode positioned thereabove is ensured by means of the thin Ge:H layer. | 02-19-2009 |
20090140232 | Resistive Memory Element - An integrated circuit including a resistive memory element is described. The resistive memory element includes a first solid electrolyte layer including a metal doped glass material, the glass material being at least partially amorphous, and a second solid electrolyte layer including the metal doped glass material. The resistive memory element also includes a middle layer disposed between the first and second solid electrolyte layers, the middle layer including a carbide composition. | 06-04-2009 |
20090200533 | Resistive Memory Element and Method of Fabrication - An integrated circuit including a memory cell and a method of manufacturing the integrated circuit are described. The memory cell includes a buried gate select transistor and a resistive memory element coupled to the buried gate select transistor. The resistive memory element stores information based on a resistivity of the resistive memory element. | 08-13-2009 |
20090200535 | Non-Volatile Memory Element with Improved Temperature Stability - An integrated circuit including a memory element is described. The memory element includes a solid electrolyte layer that includes a matrix material having a metal dissolved therein, and a dopant distributed in the matrix material, the dopant competing with the metal to bind with elements of the matrix material at a crystallization temperature so that at least a portion of the metal in the matrix material remains unbound, to increase the temperature stability of the memory element. | 08-13-2009 |
20090201716 | Memory Element with Positive Temperature Coefficient Layer - An integrated circuit including a memory element and method for manufacturing the integrated circuit are described. In some embodiments, the memory element includes a switching layer that selectively switches between a low resistance state and a high resistance state, and a positive temperature coefficient layer in thermal contact with the switching layer, the positive temperature coefficient layer having a resistance that increases in response to an increase in temperature. | 08-13-2009 |
20090272958 | Resistive Memory - An integrated circuit including a memory cell and method of manufacturing the integrated circuit are described. The memory cell includes a diode and a resistive memory element coupled to the diode. The resistive memory element includes a thin oxide storage layer that uses multiple resistance levels to store more than one bit of information in the resistive memory element. | 11-05-2009 |
20100084741 | Integrated Circuit - According to an embodiment, an integrated circuit including a plurality of resistance changing memory cells is disclosed. Each memory cell includes a first electrode, a second electrode and resistance changing memory element arranged between the first electrode and the second electrode. A front surface area of an end section of the first electrode that faces the resistance changing memory element is smaller than a front surface area of an end section of the second electrode that faces the resistance changing memory element. | 04-08-2010 |
20110037014 | METHOD FOR PRODUCING MEMORY HAVING A SOLID ELECTROLYTE MATERIAL REGION - A method for producing a solid electrolyte material region for a memory element of a solid electrolyte memory cell. A first material is formed in substantially pure form. A thermal treatment is carried out in the presence of at least one second material, and the chalcogenide material of the solid electrolyte material region thereby being produced. | 02-17-2011 |